Defining the Role of Silicon Substrate Orientation on the Polycrystalline Diamond Film: A Novel Approach for Characterizing Faceted Microstructures,Crystal Growth & Design

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Defining the Role of Silicon Substrate Orientation on the Polycrystalline Diamond Film: A Novel Approach for Characterizing Faceted Microstructures
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2017-08-28 00:00:00 , DOI: 10.1021/acs.cgd.7b00853
L. Jain ₁ , K. V. Mani Krishna ₂ , Aditya Prasad ₃ , H. K. Mehtani ₄ , D. S. Misra ₁ , Abha Misra ₅ , I. Samajdar ₄

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Polycrystalline diamond films (∼10 μm thick) were grown on five different silicon (Si) substrate orientations by microwave plasma chemical vapor deposition. The selected Si substrates had a range of f(θ): 0.18–0.65. It is to be noted that f(θ) scales inversely with the packing density of the interface. As f(θ) decreased, three changes in the polycrystalline diamond microstructures were observed. (i) At the film surface <110>-fiber texture increased but <100>-fiber dropped. (ii) A novel reconstruction technique was proposed and tested for faceted microstructures. The reconstructed microstructures revealed that the observed texture changes, with a decrease in f(θ), was accompanied by elimination of very fine facets. (iii) Noticeable differences in Raman estimated stress gradients were also observed: the lowest stress gradients for more closed packed substrates.

中文翻译：

定义硅衬底取向在多晶金刚石膜上的作用：表征刻面微结构的新方法

通过微波等离子体化学气相沉积法，在五种不同的硅（Si）衬底取向上生长了多晶金刚石膜（约10μm厚）。所选的Si基板的f（θ）范围为0.18–0.65。注意，f（θ）与界面的堆积密度成反比。随着f（θ）的减小，观察到多晶金刚石微结构的三个变化。（i）在膜表面，<110>纤维的质地增加，但<100>纤维的下落。（ii）提出了一种新颖的重建技术，并对多面微结构进行了测试。重建的微结构表明，观察到的纹理发生了变化，f减小了。（θ），伴随着非常细小的切面的消除。（iii）还观察到拉曼估计应力梯度存在明显差异：对于更密实的填充基材，最低应力梯度。

更新日期：2017-08-29

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