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6.5% Certified Efficiency Sb2Se3 Solar Cells Using PbS Colloidal Quantum Dot Film as Hole-Transporting Layer
ACS Energy Letters ( IF 19.3 ) Pub Date : 2017-08-25 00:00:00 , DOI: 10.1021/acsenergylett.7b00648
Chao Chen 1, 2, 3 , Liang Wang 1, 2, 3 , Liang Gao 1, 2, 3 , Dahyun Nam 4 , Dengbing Li 1, 2, 3 , Kanghua Li 1, 2, 3 , Yang Zhao 1, 2, 3 , Cong Ge 1, 2, 3 , Hyeonsik Cheong 4 , Huan Liu 2 , Haisheng Song 1, 2 , Jiang Tang 1, 2, 3
Affiliation  

Sb2Se3 is a promising candidate for thin-film photovoltaics, with a suitable band gap, benign grain boundaries, Earth-abundant and nontoxic constituents, and excellent stability. However, the low doping density (1013 cm–3) of Sb2Se3 absorber and back contact barrier limit its efficiency. Here we introduced a PbS colloidal quantum dot (CQD) film as the hole-transporting layer (HTL) to construct a n-i-p configured device and overcame these problems. Through simulation-guided optimization, we have significantly improved the efficiency of a Sb2Se3 thin-film solar cell to a new certified record of 6.5%. The PbS CQD HTL not only minimized carrier recombination loss at the back contact and boosted carrier collection efficiency but also contributed photocurrent by its own near-infrared absorption. Furthermore, these n-i-p devices also demonstrated improved device uniformity, achieving 6.39% in a 1.02 cm2 device.

中文翻译:

使用PbS胶体量子点薄膜作为空穴传输层的经认证的具有6.5%效率的Sb 2 Se 3太阳能电池

Sb 2 Se 3是薄膜光伏的有希望的候选者,具有合适的带隙,良性的晶界,富含地球和无毒的成分以及出色的稳定性。但是,Sb 2 Se 3吸收剂和背接触势垒的低掺杂密度(10 13 cm –3)限制了其效率。在这里,我们介绍了一种PbS胶体量子点(CQD)膜作为空穴传输层(HTL),以构造压区配置的器件并克服了这些问题。通过仿真指导的优化,我们显着提高了Sb 2 Se 3的效率薄膜太阳能电池的新认证记录为6.5%。PbS CQD HTL不仅使背面接触处的载流子重组损失最小化,并提高了载流子收集效率,还通过其自身的近红外吸收贡献了光电流。此外,这些压区装置还显示出改善的装置均匀性,在1.02 cm 2的装置中达到6.39%。
更新日期:2017-08-25
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