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Curved copper nanowires-based robust flexible transparent electrodes via all-solution approach
Nano Research ( IF 9.5 ) Pub Date : 2017-03-24 00:00:00 , DOI: 10.1007/s12274-017-1523-5
Zhenxing Yin , Seung Keun Song , Sanghun Cho , Duck-Jae You , Jeeyoung Yoo , Suk Tai Chang , Youn Sang Kim

Curved Cu nanowire (CCN)-based high-performance flexible transparent conductive electrodes (FTCEs) were fabricated via a fully solution-processed approach, involving synthesis, coating, patterning, welding, and transfer. Each step involved an innovative technique for completing the all-solution processes. The high-quality and well-dispersed CCNs were synthesized using a multi-polyol method through the synergistic effect of specific polyol reduction. To precisely control the optoelectrical properties of the FTCEs, the CCNs were uniformly coated on a polyimide (PI) substrate via a simple meniscus-dragging deposition method by tuning several coating parameters. We also employed a polyurethane (PU)-stamped patterning method to effectively produce 20 μm patterns on CCN thin films. The CCN thin films exhibited high electrical performance, which is attributed to the deeply percolated CCN network formed via a solvent-dipped welding method. Finally, the CCN thin films on the PI substrate were partially embedded and transferred to the PU matrix to reduce their surface roughness. Through consecutive processes involving the proposed methods, a highly percolated CCN thin film on the PU matrix exhibited high optoelectrical performance (Rs = 53.48 Ω/□ at T = 85.71%), excellent mechanical properties (R/R0 < 1.10 after the 10th repetition of tape peeling or 1,000 bending cycles), and a low root-mean-square surface roughness (Rrms = 14.36 nm).

中文翻译:

通过全解决方案的基于弯曲铜纳米线的坚固耐用的柔性透明电极

弯曲铜纳米线(CCN)为基础的高性能柔性透明导电电极(FTCE)是通过完全固溶处理的方法制造的,包括合成,涂覆,构图,焊接和转移。每个步骤都涉及一种用于完成所有解决方案过程的创新技术。利用多元醇方法通过特定多元醇还原的协同作用合成了高质量且分散良好的CCN。为了精确控制FTCE的光电性能,通过调整多个涂覆参数,通过简单的弯月面拖动沉积方法,将CCN均匀涂覆在聚酰亚胺(PI)衬底上。我们还采用了聚氨酯(PU)压印的图案化方法,以在CCN薄膜上有效地产生20μm的图案。CCN薄膜具有很高的电性能,这归因于通过溶剂浸渍焊接方法形成的深层渗透的CCN网络。最后,将PI基板上的CCN薄膜部分嵌入并转移到PU基质中,以降低其表面粗糙度。通过涉及所提出方法的连续过程,PU基质上高度渗透的CCN薄膜表现出高光电性能(R s = 53.48Ω/□,T = 85.71%),优异的机械性能(胶带剥离10或1,000次弯曲循环后,R / R 0 <1.10 )和低均方根表面粗糙度(R rms = 14.36 nm)。
更新日期:2017-08-18
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