Single-crystal gallium nitride (GaN) layers were directly grown on centimeter-scale hexagonal boron nitride (h-BN). Using chemical vapor deposition (CVD), centimeter-scale h-BN films were synthesized on a single-crystal Ni(111) and readily transferred onto amorphous fused silica supporting substrates that had no epitaxial relationship with GaN. For growing fully coalescent GaN layers on h-BN, the achievement of high-density crystal growths was a critical growth step because the sp²-bonded h-BN layers are known to be free of dangling bonds. Unlike GaN layers grown on a typical heterogeneous sapphire substrate, the morphological and microstructural results strongly suggest a high-density growth feature that is driven by the atomic cliffs inherent in the CVD-grown h-BN layers. More importantly, the GaN layers grown on CVD-grown h-BN exhibited a flat and continuous surface morphology with well-aligned crystal orientations both along the c-axis and in-plane, indicating the characteristics of GaN heteroepitaxy on h-BN.

单晶氮化镓（GaN）层直接在厘米级六方氮化硼（h-BN）上生长。使用化学气相沉积（CVD），在单晶Ni（111）上合成了厘米级h-BN膜，并易于转移到与GaN没有外延关系的非晶态熔融二氧化硅支撑衬底上。对于在h-BN上生长完全聚结的GaN层，实现高密度晶体生长是关键的生长步骤，因为sp ²已知键合的h-BN层没有悬空键。与在典型的异质蓝宝石衬底上生长的GaN层不同，形态和微观结构结果强烈暗示了由CVD生长的h-BN层固有的原子峭壁驱动的高密度生长特征。更重要的是，在生长有CVD的h-BN上生长的GaN层显示出平坦连续的表面形态，沿c轴和面内都具有良好排列的晶体取向，这表明GaN在h-BN上具有异质外延的特性。