Cu(In,Ga)Se2 thin-film solar cells exhibit record power-conversion efficiencies of currently 22.6%. Such performance is impressive in view of the rather small average grain sizes of the Cu(In,Ga)Se2 absorber. This work gives insight to the chemistry at linear and planar defects in Cu(In,Ga)Se2 absorber at the nanometer scale by means of atom-probe tomography. Moreover, the tip sample is investigated by transmission electron microscopy prior to the atom-probe tomography experiments to determine the structure of the planar defects. These experimental results are compared with those from theoretical predictions, and consequences for the energy-band diagrams around these planar defects are proposed.

中文翻译：

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通过原子探针断层扫描评估 Cu(In,Ga)Se 2 薄膜中线和平面缺陷的元素分布

Cu(In,Ga)Se2 薄膜太阳能电池目前表现出创纪录的 22.6% 的功率转换效率。鉴于 Cu(In,Ga)Se2 吸收剂的平均晶粒尺寸相当小，这种性能令人印象深刻。这项工作通过原子探针断层扫描在纳米尺度上深入了解 Cu(In,Ga)Se2 吸收剂中线性和平面缺陷的化学性质。此外，在原子探针断层扫描实验之前，通过透射电子显微镜研究尖端样品，以确定平面缺陷的结构。将这些实验结果与理论预测的结果进行比较，并提出了这些平面缺陷周围能带图的结果。