Atom probe tomography (APT) has emerged as a valuable tool in the study of nitride semiconductors, despite the challenges involved in achieving controlled field evaporation. In optoelectronics, it has provided insights into the nanostructure of light emitting diodes, laser diodes and microwires. In electronics, it has allowed insights into impurity doping and alloying effects in transistors. Coupled with direct correlative studies using other techniques and theoretical modelling based on the APT data, the availability of three dimensional compositional information on nitride heterostructures has had (and will continue to have) a profound impact on the design and development of devices.

中文翻译：

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氮化物半导体的原子探针断层扫描

尽管在实现受控场蒸发方面存在挑战，但原子探针断层扫描 (APT) 已成为研究氮化物半导体的宝贵工具。在光电子学方面，它提供了对发光二极管、激光二极管和微丝的纳米结构的深入了解。在电子领域，它可以让我们深入了解晶体管中的杂质掺杂和合金化效应。结合使用其他技术和基于 APT 数据的理论建模的直接相关研究，氮化物异质结构的三维成分信息的可用性已经（并将继续）对器件的设计和开发产生深远的影响。