Argon Plasma Induced Phase Transition in Monolayer MoS2,Journal of the American Chemical Society

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Argon Plasma Induced Phase Transition in Monolayer MoS2
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2017-07-24 00:00:00 , DOI: 10.1021/jacs.7b05765
Jianqi Zhu _{1,

2} , Zhichang Wang ₃ , Hua Yu _{1,

2} , Na Li _{1,

2} , Jing Zhang ₄ , JianLing Meng ₅ , Mengzhou Liao _{1,

2} , Jing Zhao ₆ , Xiaobo Lu _{1,

2} , Luojun Du ₁ , Rong Yang _{1,

2} , Dongxia Shi _{1,

2} , Ying Jiang _{3,

7} , Guangyu Zhang _{1,

2,

7,

8}

Affiliation

In this work, we report a facile, clean, controllable and scalable phase engineering technique for monolayer MoS₂. We found that weak Ar-plasma bombardment can locally induce 2H→1T phase transition in monolayer MoS₂ to form mosaic structures. These 2H→1T phase transitions are stabilized by point defects (single S-vacancies) and the sizes of induced 1T domains are typically a few nanometers, as revealed by scanning tunneling microscopy measurements. On the basis of a selected-area phase patterning process, we fabricated MoS₂ FETs inducing 1T phase transition within the metal contact areas, which exhibit substantially improved device performances. Our results open up a new route for phase engineering in monolayer MoS₂ and other transition metal dichalcogenide (TMD) materials.

中文翻译：

氩等离子体诱导单层MoS _{2中的相变}

在这项工作中，我们报告了一种适用于单层MoS ₂的便捷，清洁，可控制和可扩展的阶段工程技术。我们发现弱的Ar-等离子体轰击可以在单层MoS _2中局部诱导2H→1T相变以形成镶嵌结构。这些2H→1T相变通过点缺陷（单个S空位）得以稳定，并且诱导1T域的大小通常为几纳米，如通过扫描隧道显微镜测量所揭示的。基于选定区域的相位图案化工艺，我们制造了在金属接触区域内引起1T相变的MoS ₂ FET，从而显着提高了器件性能。我们的结果为单层MoS _2中的相工程开辟了一条新途径以及其他过渡金属二硫化氢（TMD）材料。

更新日期：2017-07-25

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