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Phenyl Derivative of Dibenzothiopheno[6,5‐b:6′,5′‐f]Thieno[3,2‐b]Thiophene (DPh‐DBTTT): High Thermally Durable Organic Semiconductor for High‐Performance Organic Field‐Effect Transistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-07-20 , DOI: 10.1002/aelm.201700142 Eun-Kyung Lee 1 , Moo Yeol Lee 2 , Ajeong Choi 1 , Joo-Young Kim 1 , O. Young Kweon 2 , Jung-Hwa Kim 3 , Ji Young Jung 1 , Tae-Joo Shin 4, 5 , Joon Hak Oh 2 , Jeong-Il Park 1 , Sang Yoon Lee 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-07-20 , DOI: 10.1002/aelm.201700142 Eun-Kyung Lee 1 , Moo Yeol Lee 2 , Ajeong Choi 1 , Joo-Young Kim 1 , O. Young Kweon 2 , Jung-Hwa Kim 3 , Ji Young Jung 1 , Tae-Joo Shin 4, 5 , Joon Hak Oh 2 , Jeong-Il Park 1 , Sang Yoon Lee 1
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Phenyl‐substituted heteroacene, diphenyl‐dibenzothiopheno[6,5‐b:6′,5′‐f]thieno[3,2‐b]thiophene (DPh‐DBTTT), is introduced as a thermally durable high‐performance organic semiconductor. The DPh‐DBTTT single crystals exhibit hole mobility up to 31.9 cm2 V−1 s−1, and the vacuum‐deposited DPh‐DBTTT thin‐film transistors show a maximum mobility of 6.32 cm2 V−1 s−1. X‐ray crystallographic analysis reveals that the small tilting angle between the phenyl substituent and the DBTTT core reduces the reorganization energy dramatically. The structure–property relationships are thoroughly investigated using atomic force microscopy, transmission electron microscopy, and grazing incidence X‐ray diffraction analyses, in addition to charge‐transport studies. The vacuum‐deposited DPh‐DBTTT thin‐film transistors show superior thermal durability compared to the core DBTTT, which is highly valuable for device processability.
中文翻译：
二苯并噻吩[6,5-b：6'，5'-f]噻吩并[3,2-b]噻吩（DPh-DBTTT）的苯衍生物：用于高性能有机场效应晶体管的高耐热性有机半导体
苯基取代的杂并苯，二苯基-二苯并噻吩[6,5- b：6'，5'- f ]噻吩并[3,2- b ]噻吩（DPh-DBTTT）被引入作为一种耐高温高性能有机半导体。DPh-DBTTT单晶的空穴迁移率高达31.9 cm 2 V -1 s -1，真空沉积的DPh-DBTTT薄膜晶体管的最大迁移率为6.32 cm 2 V -1 s -1。X射线晶体学分析表明，苯基取代基与DBTTT核之间的小倾斜角显着降低了重组能。除了电荷传输研究之外，还使用原子力显微镜，透射电子显微镜和掠入射X射线衍射分析法彻底研究了结构与性质之间的关系。与核心DBTTT相比，真空沉积的DPh-DBTTT薄膜晶体管显示出卓越的热耐久性，这对于器件的可加工性具有很高的价值。
更新日期：2017-07-20
中文翻译：
二苯并噻吩[6,5-b：6'，5'-f]噻吩并[3,2-b]噻吩（DPh-DBTTT）的苯衍生物：用于高性能有机场效应晶体管的高耐热性有机半导体
苯基取代的杂并苯，二苯基-二苯并噻吩[6,5- b：6'，5'- f ]噻吩并[3,2- b ]噻吩（DPh-DBTTT）被引入作为一种耐高温高性能有机半导体。DPh-DBTTT单晶的空穴迁移率高达31.9 cm 2 V -1 s -1，真空沉积的DPh-DBTTT薄膜晶体管的最大迁移率为6.32 cm 2 V -1 s -1。X射线晶体学分析表明，苯基取代基与DBTTT核之间的小倾斜角显着降低了重组能。除了电荷传输研究之外，还使用原子力显微镜，透射电子显微镜和掠入射X射线衍射分析法彻底研究了结构与性质之间的关系。与核心DBTTT相比，真空沉积的DPh-DBTTT薄膜晶体管显示出卓越的热耐久性，这对于器件的可加工性具有很高的价值。
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