Size Dependence of Doping by a Vacancy Formation Reaction in Copper Sulfide Nanocrystals,Angewandte Chemie International Edition

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Size Dependence of Doping by a Vacancy Formation Reaction in Copper Sulfide Nanocrystals
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2017-07-19 06:15:43 , DOI: 10.1002/anie.201702673
Orian Elimelech ₁ , Jing Liu ₂ , Anna M. Plonka ₂ , Anatoly I. Frenkel ₂ , Uri Banin ₁

Affiliation

Doping of nanocrystals (NCs) is a key, yet underexplored, approach for tuning of the electronic properties of semiconductors. An important route for doping of NCs is by vacancy formation. The size and concentration dependence of doping was studied in copper(I) sulfide (Cu₂S) NCs through a redox reaction with iodine molecules (I₂), which formed vacancies accompanied by a localized surface plasmon response. X-ray spectroscopy and diffraction reveal transformation from Cu₂S to Cu-depleted phases, along with CuI formation. Greater reaction efficiency was observed for larger NCs. This behavior is attributed to interplay of the vacancy formation energy, which decreases for smaller sized NCs, and the growth of CuI on the NC surface, which is favored on well-defined facets of larger NCs. This doping process allows tuning of the plasmonic properties of a semiconductor across a wide range of plasmonic frequencies by varying the size of NCs and the concentration of iodine. Controlled vacancy doping of NCs may be used to tune and tailor semiconductors for use in optoelectronic applications.

中文翻译：

硫化铜纳米晶体中空位形成反应掺杂的尺寸依赖性

掺杂纳米晶体（NCs）是调节半导体电子特性的一种关键方法，但尚未得到充分研究。掺杂NC的重要途径是空位形成。通过与碘分子（I ₂）的氧化还原反应在硫化铜（I ₂）NCs中研究了掺杂的大小和浓度依赖性，形成了空位并伴随着局部表面等离子体激元响应。X射线光谱和衍射揭示了Cu _2的转变从S到贫Cu的相，以及CuI的形成。对于较大的NC，观察到更高的反应效率。此行为归因于空位形成能的相互作用，对于较小尺寸的NC，该空位形成能降低，并且在NC表面上CuI的生长，这在较大NC的轮廓分明的刻面上是有利的。通过改变NC的大小和碘的浓度，这种掺杂过程可以在宽范围的等离子体频率上调节半导体的等离子体性能。NC的受控空位掺杂可用于调整和定制用于光电子应用的半导体。

更新日期：2017-07-20

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