3DXP memory has emerged as the most powerful next generation non‐volatile memory. In article number 1700152, Cheol Seong Hwang and co‐workers demonstrate a 3DXP memory with double‐layer resistive‐switching random‐access‐memory architecture. The integrated diode shows the highest cell‐selector performance reported to date. A novel sensing scheme optimized for the device structure enhances the feasibility of ultra‐high‐density 3DXP memory realization.

中文翻译：

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下一代存储器：具有109的极高整流比的双层堆叠式一二极管一电阻式开关存储器交叉开关阵列（Adv。Electron Mater。7/2017）

3DXP内存已成为功能最强大的下一代非易失性内存。Cheol Seong Hwang及其同事在文章1700152中演示了一种具有双层电阻切换随机存取存储器架构的3DXP存储器。集成二极管显示了迄今为止报道的最高的电池选择器性能。针对器件结构进行了优化的新颖传感方案增强了超高密度3DXP存储器实现的可行性。