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Piezoelectrics: High Piezoelectric Performance and Phase Transition in Stressed Lead‐Free (1 – x)(K, Na)(Sb, Nb)O3‐x(Bi, Na, K)ZrO3 Thin Films (Adv. Electron. Mater. 7/2017)
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2017-07-10 , DOI: 10.1002/aelm.201770031
Yumei Wang 1, 2 , Kui Yao 1 , Xian Qin 3 , Meysam Sharifzadeh Mirshekarloo 1 , Xiaogang Liu 1, 3 , Francis Eng Hock Tay 2
Affiliation  

Outstandingly large effective piezoelectric strain coefficient and voltage coefficient, determined by laser scanning vibrometry on the macro scale, are obtained in lead‐free (1–x)(K, Na)(Sb, Nb)O3–x(Bi, Na, K)ZrO3 piezoelectric thin film under substrate clamping condition, as reported by Kui Yao and co‐workers in article number 1700033. The coexistence of a rhombohedral‐tetragonal phase and the superior performance in the solution‐derived films are realized with suppressed volatile loss by introducing specifically selected combinational chemical agents.
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中文翻译:

压电:高压无铅(1-x)(K,Na)(Sb,Nb)O3-x(Bi,Na,K)ZrO3薄膜中的高压电性能和相变(Adv。Electron。Mater。7 / 2017)

在无铅(1–x)(K,Na)(Sb,Nb)O 3 –x(Bi,Na,Kui Yao及其同事在文章编号1700033中报道了K)ZrO 3压电薄膜在衬底夹持条件下的存在。菱形四面体相的共存和在溶液衍生薄膜中的优越性能得以实现,并且挥发性损失得到了抑制通过引入专门选择的组合化学试剂。
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更新日期:2017-07-10
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