Fully Solution‐Processed Transparent Nonvolatile and Volatile Multifunctional Memory Devices from Conductive Polymer and Graphene Oxide,Advanced Electronic Materials

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Fully Solution‐Processed Transparent Nonvolatile and Volatile Multifunctional Memory Devices from Conductive Polymer and Graphene Oxide
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-06-29 , DOI: 10.1002/aelm.201700135
Rui Shi ₁ , Xiangjing Wang ₁ , Zhan Wang ₁ , Lijun Cao ₁ , Mengya Song ₁ , Xiao Huang ₁ , Juqing Liu ₁ , Wei Huang _{1,

2}

Affiliation

A transparent multifunctional memory array with the configuration of m‐poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS)/graphene oxide (GO)/m‐PEDOT:PSS is fabricated through a full‐solution process. Dimethyl sulfoxide‐doped PEDOT:PSS thin films as the top and bottom electrodes are facilely prepared by spray coating, and a GO film as the active medium layer is obtained by spin coating. The thus‐fabricated device exhibits nonvolatile and volatile multifunctional memory effects, with an ON/OFF current ratio of 10⁴ and 10² for the nonvolatile and volatile modes, respectively. Both the ON and OFF states are stable under the retention test in the nonvolatile memory mode, as well as during the endurance test in the volatile memory mode, demonstrating advantageous features of stable operation, permanent lifetime, excellent reproducibility, and reliable switching endurance. Moreover, the devices also show a 70% transmission of visible light. Their high transparency, combined with the multifunctional property and simple device configuration, makes these devices promising carbon‐based building blocks in a variety of electronic systems such as transparent electronics, electronic labels, radio frequency identification, internal memory, and databases. Most importantly, the simple full‐solution fabrication process is anticipated to potentially afford industrial‐scale low‐cost fabrication of future electronic devices.

中文翻译：

由导电聚合物和氧化石墨烯进行全溶液处理的透明非易失性和挥发性多功能存储设备

通过全解决方案制造了具有m-poly（3,4-乙烯二氧噻吩）：聚（苯乙烯磺酸）（PEDOT：PSS）/氧化石墨烯（GO）/ m-PEDOT：PSS构型的透明多功能存储阵列。可以通过喷涂轻松地制备掺杂二甲亚砜的PEDOT：PSS薄膜作为顶部和底部电极，并通过旋涂获得GO膜作为活性介质层。如此制作的器件具有非易失性和易失性多功能记忆效应，开/关电流比为10 ⁴和10 ²分别用于非易失性和易失性模式。在非易失性存储模式下的保持测试下以及在易失性存储模式下的耐久性测试下，ON和OFF状态均稳定，这表明其具有稳定工作，永久寿命，出色的可重复性和可靠的开关耐久性等优点。此外，这些设备还显示了70％的可见光透射率。它们的高透明性，再加上多功能特性和简单的设备配置，使得这些设备成为各种电子系统中基于碳的构件的希望，例如透明电子，电子标签，射频识别，内部存储器和数据库。最重要的是，

更新日期：2017-06-29

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