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Few-atomic-layered hexagonal boron nitride: CVD growth, characterization, and applications
Materials Today ( IF 21.1 ) Pub Date : 2017-12-01 , DOI: 10.1016/j.mattod.2017.04.027
Majharul Haque Khan , Hua Kun Liu , Xudong Sun , Yusuke Yamauchi , Yoshio Bando , Dmitri Golberg , Zhenguo Huang

Two-dimensional (2D) materials have shown outstanding properties that make them the materials of choice for future semiconductor and flexible nanoelectronics. Hexagonal boron nitride nanosheet (BNNS) is one of the most studied 2D materials due to its extraordinary properties and potential applications. The synthesis of large, homogeneous, and few-layered BNNS, however, remains challenging. Among the various synthetic routes, chemical vapour deposition (CVD) is preferred on the grounds of its potential to yield large BNNS with controllable atomic layers and minimal contamination. We thus devote this review to the CVD growth of BNNS, and its characterization and applications. The recent progresses in the CVD growth of BNNS is firstly summarized from the aspects of precursors, substrates, growth mechanisms, and transfer techniques. This review then moves on to the characterization of few-atomic-layered h-BN sheets, covering a variety of microscopic and spectroscopic techniques that have proved useful for assessing the quality of BNNS. The applications of the BNNS are also summarized. This review is expected to instigate new methods and improvements in relation to the CVD growth of BNNS, which has enabled exceptional performance as a key component of nanoscale electronics.

中文翻译:

少原子层状六方氮化硼:CVD 生长、表征和应用

二维 (2D) 材料显示出出色的特性,使其成为未来半导体和柔性纳米电子学的首选材料。六方氮化硼纳米片(BNNS)因其非凡的性能和潜在的应用而成为研究最多的二维材料之一。然而,大型、均匀和少层的 BNNS 的合成仍然具有挑战性。在各种合成路线中,化学气相沉积 (CVD) 是首选,因为它有可能产生具有可控原子层和最小污染的大型 BNNS。因此,我们将这篇综述用于 BNNS 的 CVD 生长及其表征和应用。首先从前驱体、衬底、生长机制和转移技术等方面总结了BNNS CVD生长的最新进展。然后,这篇综述继续描述少原子层状 h-BN 片的表征,涵盖了各种显微和光谱技术,这些技术已被证明对评估 BNNS 的质量很有用。也总结了 BNNS 的应用。预计该评论将激发与 BNNS CVD 生长相关的新方法和改进,这使得作为纳米级电子产品的关键组件具有卓越的性能。
更新日期:2017-12-01
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