Negative Differential Resistance Transistor with Organic p‐n Heterojunction,Advanced Electronic Materials

当前位置： X-MOL 学术 › Adv. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Negative Differential Resistance Transistor with Organic p‐n Heterojunction
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-06-19 , DOI: 10.1002/aelm.201700106
Kazuyoshi Kobashi _{1,

2} , Ryoma Hayakawa ₁ , Toyohiro Chikyow ₁ , Yutaka Wakayama _{1,

2}

Affiliation

Negative differential resistance (NDR) has large potential for versatile device applications, including high‐frequency oscillators, memories, fast switches, and multilevel logic circuits. NDRs are observed at heteromaterial interfaces in resonant tunneling diodes or Esaki diodes consisting of compound semiconductors or two‐dimensional (2D) atomic thin films. However, these devices suffer from poor peak‐to‐valley ratios (PVR) at room temperature; a cryogenic temperature is needed to improve the PVR. These negative factors are obstacles to practical applications. Here, a new NDR transistor is proposed, in which a p‐n heterojunction of organic semiconductors plays a key role. Well‐balanced carrier transport is manipulated at the organic p‐n junction to realize outstanding NDR. Experimental and simulation analyses reveal that the observed NDR can be explained by analogy with the shoot‐through current mechanism in complementary metal‐oxide‐ semiconductor (CMOS) devices. As a result, the NDR transistor shows large PVRs of up to about 10⁴ even at room temperature.

中文翻译：

带有有机p-n异质结的负差分电阻晶体管

负差分电阻（NDR）对于包括高频振荡器，存储器，快速开关和多级逻辑电路在内的多种器件应用具有巨大的潜力。在由化合物半导体或二维（2D）原子薄膜组成的共振隧穿二极管或Esaki二极管的异质材料界面处观察到NDR。但是，这些设备在室温下具有较差的峰谷比（PVR）。需要低温来改善PVR。这些负面因素阻碍了实际应用。在这里，提出了一种新的NDR晶体管，其中有机半导体的p-n异质结在其中起着关键作用。在有机PN结处操纵均衡的载流子传输，以实现出色的NDR。实验和仿真分析表明，可以用互补金属氧化物半导体（CMOS）器件中的直通电流机制来解释观察到的NDR。结果，NDR晶体管显示出高达约10的大型PVR。⁴即使在室温下。

更新日期：2017-06-19

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11