Integrated circuits based on complementary metal-oxide–semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300–2,000 nm). The demonstrated graphene–CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

中文翻译：

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基于石墨烯-CMOS集成的宽带图像传感器阵列

基于互补金属氧化物半导体（CMOS）的集成电路是过去40年技术革命的核心，可实现紧凑且低成本的微电子电路和成像系统。但是，由于难以将硅以外的半导体与CMOS相结合，因此阻碍了该平台向除微电路和可见光照相机以外的应用的多样化发展。在这里，我们报告了以石墨烯作为高迁移率光电晶体管的CMOS集成电路的单片集成。我们展示了一种高分辨率的宽带图像传感器，并将其作为对紫外线，可见光和红外光（300-2,000 nm）敏感的数码相机来使用。已证明的石墨烯-CMOS集成对于将二维材料整合到下一代微电子学中至关重要，