Metal/organic interfaces and their structural, electronic, spintronic and thermodynamic properties have been investigated intensively, aiming to improve and develop future electronic devices. In this context, heteromolecular phases add new design opportunities simply by combining different molecules. However, controlling the desired phases in such complex systems is a challenging task. Here, we report an effective way of steering the growth of a bimolecular system composed of adsorbate species with opposite intermolecular interactions—repulsive and attractive, respectively. The repulsive species forms a two-dimensional lattice gas, the density of which controls which crystalline phases are stable. Critical gas phase densities determine the constant-area phase diagram that describes our experimental observations, including eutectic regions with three coexisting phases. We anticipate the general validity of this type of phase diagram for binary systems containing two-dimensional gas phases, and also show that the density of the gas phase allows engineering of the interface structure.

中文翻译：

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通过利用分子间斥力控制多个有序异分子相的生长

对金属/有机界面及其结构，电子，自旋电子学和热力学性质进行了深入研究，旨在改善和发展未来的电子设备。在这种情况下，仅通过组合不同的分子，杂分子相就可以增加新的设计机会。但是，在这样复杂的系统中控制所需相位是一项艰巨的任务。在这里，我们报告了一种指导由具有相反分子间相互作用（分别是排斥和吸引）的被吸附物组成的双分子系统生长的有效方法。排斥物质形成二维晶格气体，其密度控制哪些晶相是稳定的。临界气相密度决定了描述我们实验观察结果的恒定面积相图，包括具有三个共存阶段的共晶区域。我们预计这种相图对于包含二维气相的二元系统的一般有效性，并且还表明气相密度允许工程化界面结构。