Silane and Germane Molecular Electronics,Accounts of Chemical Research

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Silane and Germane Molecular Electronics
Accounts of Chemical Research ( IF 16.4 ) Pub Date : 2017-03-27 00:00:00 , DOI: 10.1021/acs.accounts.7b00059
Timothy A. Su ₁ , Haixing Li ₂ , Rebekka S. Klausen ₃ , Nathaniel T. Kim ₁ , Madhav Neupane ₁ , James L. Leighton ₁ , Michael L. Steigerwald ₁ , Latha Venkataraman _{1,

2} , Colin Nuckolls ₁

Affiliation

This Account provides an overview of our recent efforts to uncover the fundamental charge transport properties of Si–Si and Ge–Ge single bonds and introduce useful functions into group 14 molecular wires. We utilize the tools of chemical synthesis and a scanning tunneling microscopy-based break-junction technique to study the mechanism of charge transport in these molecular systems. We evaluated the fundamental ability of silicon, germanium, and carbon molecular wires to transport charge by comparing conductances within families of well-defined structures, the members of which differ only in the number of Si (or Ge or C) atoms in the wire. For each family, this procedure yielded a length-dependent conductance decay parameter, β. Comparison of the different β values demonstrates that Si–Si and Ge–Ge σ bonds are more conductive than the analogous C–C σ bonds. These molecular trends mirror what is seen in the bulk.

中文翻译：

硅烷和日耳曼分子电子

该报告概述了我们最近为发现Si-Si和Ge-Ge单键的基本电荷传输性质并将有用的功能引入第14组分子线而做出的努力。我们利用化学合成工具和基于扫描隧道显微镜的断裂连接技术来研究这些分子系统中电荷传输的机理。我们通过比较结构明确的族中的电导来评估硅，锗和碳分子线传输电荷的基本能力，这些结构的成员仅在线中的Si（或Ge或C）原子数上有所不同。对于每个家庭，此过程都产生了一个与长度有关的电导衰减参数β。比较不同的β值表明，Si-Si和Ge-Geσ键比类似的C-Cσ键导电性更高。这些分子趋势反映了大部分情况。

更新日期：2017-03-27

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