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Enhanced Superconductivity in Restacked TaS2Nanosheets
Journal of the American Chemical Society ( IF 15.0 ) Pub Date : 2017-03-23 , DOI: 10.1021/jacs.7b00216
Jie Pan 1, 2, 3 , Chenguang Guo 1, 2, 3 , Changsheng Song 1 , Xiaofang Lai 3 , Hui Li 4 , Wei Zhao 1 , Hui Zhang 5 , Gang Mu 5 , Kejun Bu 1, 2, 3 , Tianquan Lin 1 , Xiaoming Xie 5 , Mingwei Chen 4, 6 , Fuqiang Huang 1, 3
Affiliation  

Since interface superconductivity was discovered at the interface between two insulating layers LaAlO3 and SrTiO3, such interface-induced superconducting systems have been a research hotspot in superconductivity. Here, we report homogeneous interfaces formed by stacking chemically exfoliated monolayer TaS2 nanosheets randomly. Enhanced superconductivity of Tc = 3 K is observed, compared with 0.8 K of parent 2H-TaS2. The measurement of heat capacity shows the increase of electronic specific-heat coefficient γ of restacked TaS2 nanosheets compared to parent 2H-TaS2 crystals. Density functional theory calculations indicate that increase and delocalization of electron states near the Fermi surface due to the homogeneous interfaces effects could account for the enhanced superconductivity.

中文翻译:

重新堆叠的 TaS2 纳米片中增强的超导性

由于在两个绝缘层 LaAlO3 和 SrTiO3 之间的界面处发现了界面超导性,因此这种界面诱导超导系统一直是超导领域的研究热点。在这里,我们报告了通过随机堆叠化学剥离的单层 TaS2 纳米片形成的均匀界面。观察到 Tc = 3 K 的超导性增强,而母体 2H-TaS2 的超导性为 0.8 K。热容量的测量表明,与母体 2H-TaS2 晶体相比,重新堆叠的 TaS2 纳米片的电子比热系数 γ 增加。密度泛函理论计算表明,由于均匀界面效应,费米表面附近电子态的增加和离域可以解释增强的超导性。
更新日期:2017-03-23
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