马锡英 - 苏州科技大学

个人简介

苏州科技大学数理学院教授。1998年7月毕业于兰州大学物理系凝聚态物理专业，获理学博士学位，导师为陈光华教授。1999.08-2000.07在加拿大曼尼托巴大学做访问学者，2001.01-2002.12航天部第五研究院兰州物理所博士后（合作导师：陈学康），2001.09-2001.12复旦大学物理系高级访问学者（合作导师：王迅教授，中国科学院院士）。2002年被遴选为硕士生导师。曾获浙江省高校中青年教师学科带头人、绍兴市第五、六批专业技术拔尖人才、学术带头人、浙江省优秀留学人员称号。

研究领域

主要从事半导体纳米光电材料与器件、光子晶体、低维量子结构等方面的研究

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1]. 马锡英.《光子晶体原理与应用》，专著，科学出版社，2010年。 [2] Miaofei Meng and Xiying Ma (通讯作者)， Improving the Photoelectric Characteristics of MoS2 Thin Films by Doping Rare Earth Element Erbium，Nanoscale Research Letters (2016) 11: 513-518. [3] Weixia Gu, Jiaoyan Shen, Xiying Ma (通讯作者), Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors, Nano Rese. Lett. 9: 100-104, 2014, EI, SCI Ⅱ区． [4] Xiying Ma, Hongming Mao, Miaofei Meng，Surface Plasmon Resonance Effect of the MoS2/Ag System，Materials Science Forum Online: 2017-06-19 ISSN: 1662-9752, Vol. 898, pp 1857-1861. [5] Xiying Ma, Qiang Wang, and Weixia Gu，Enhancement of Photoelectric Efficiency via Optimization of Absorption and Excitation of Surface Plasmons in ZnO/CdS/MoS2/Ag Multilayer Films, Journal of Nanoelectronics and Optoelectronics Vol. 10, 1–4, 2015. [6] Xiying Ma, Jie He, Kangye Chen, La Lin, Improvement In Mobility and Conductivity Of Few-Layer Mos2 Films, Inter. J. Modern Physics B, 28, (4)) 1450028-38，2014. [7] Weixia Gu, Fan Yang, Chen Wu, Yi Zhang, Xiying Ma (通讯作者), Fabrication and investigation of the optoelectrical properties of MoS2 /CdS heterojunction solar cells, Nanoscale Research Letters 2014, 9: 662-666. [8] Xiying Ma，Hao Zhang，Fabrication of graphene films with high transparent conducting characteristics，Nano. Rese. Lett.，8:440-445, 2013. EI, SCI Ⅱ区． [9] Xiying Ma, The electromagnetic properties of dilute magnetic GeSi: Mn, quantum rings, J. Mater Sci, 2013, 48(5): 2111-2114. [10] Xiying Ma, Miaoyuan Shi，Thermal Evaporation Deposition of Few-layer MoS2 Films，Nano-Micro Lett. 5(2), 135-139 (2013). [11] Xiying Ma, Caoxin Lou, The electromagnetic properties of the Mn doped Ge/Si quantum dots diodes, Materials Science and Engineering B, 178 (2013) 174-179. [12] Xiying Ma, Weixia Gu, Jiaoyan Shen, Yunhai Tang, Investigation of Electronic Properties of Graphene/Si Field-Effect Transistor, Nano Rese. Lett. 2012, 7:677-681 [13] Xiying Ma, Memory properties of a Ge nanoring MOS device fabricated by pulsed laser deposition，Nanotechnology，V. 19, 27506, 2008. [14] Xiying Ma, Z. Yan, B. Yuan, B. Li. The Light Emitting Properties of Ge Nanocrystals Grown by Pulsed Laser Deposition, Nanotechnology, V. 16, 832-835, 2005. [15] Xiying Ma, L. Zhang. Fabrication of Ge quantum rings from the droplets by pulsed laser deposition，Applied Physics B-Lasers and Optics, V. 91,173-176, 2008. [16] Xiying Ma, C. Wang. Memory Properties of a Ge Nanocrystals MOS Device Fabricated by Pulsed Laser Deposition, Applied Physics B-Lasers and Optics, V.95，589-592, 2008. [17] Xiying Ma, W. Shi, Z.Yan, Baoping Shen. Fabrication of Silica/Zinc Oxide Core-Shell Colloidal Photonic Crystals，Applied Physics B-Lasers and Optics, V. 88(22), 245-248, 2007.) [18] Xiying Ma. Optical of Characteristics of CdS Photonic Crystals, Applied Physics B-Lasers and Optics, V.84, 339-341, 2006. (SCI Index:2.2 [19] Xiying Ma, Sh. H. Huang, Y. Chen, F. Lu. Investigation of the Quantum Confinement Effects in Ge Dots by Electrical Measurements, Applied Surface Science, V. 225, 281, 2004. [20] Xiying Ma, Caoxin Lou，The Ferromagnetic Properties of Ge Magnetic Quantum Dots Doped With Mn，Applied surface science, 258（7, 2012, 2906-2909.