个人简介
分别于2005年及2007年获得华中科技大学工学学士和工学硕士学位，2013年获得新加坡国立大学博士学位。2013年4月至2015年3月在新加坡微电子研究院任职研究员(Research Scientist)。2015年4月，加入华中科技大学光学与电子信息学院，任职副教授、博士生导师。先后在中国科学院微电子研究所（2007-2008年），新加坡国立大学（2009-2013年），新加坡微电子研究院（2009-2015年）从事CMOS/BiCMO射频，毫米波以及光通信集成电路方面的研究工作。作为主要研究人员或项目负责人，研究设计了多款60 GHz CMOS功率放大器，94 GHz BiCMOS成像系统，130 GHz BiCMOS高速通信电路，2.5 Gb/s和4×25 Gb/s CMOS跨阻放大器及阵列（对标美国公司产品），10 GHz CMOS 压控振荡器以及倍频器，多款无线通信用GHz功率放大器、低噪声放大器以及混频器，传感器专用放大器、数字无线电系统中的多频多相产生电路、多层共模滤波器（量产）等；其中, 在硅基W波段辐射计集成芯片设计方面取得突破性研究成果，在硅基上以创新性的电路结构设计实现了低损耗W波段单刀双掷开关、多款高灵敏度W波段辐射计以及多款高增益W波段放大器，以第一作者/通讯作者在IEEE/IET 著名期刊T-MTT、MWCL、T-CAS II、IET MAP、EL发表论文十多篇。
研究领域
1. 射频、毫米波集成电路 2. 高速光通信集成电路
近期论文
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1. X. J. Bi*, et al, “A Low Switching-Loss W-Band Radiometer Utilizing a Single-Pole-Double-Throw Distributed Amplifier in 0.13 μm SiGe BiCMOS,” IEEE Trans. Microw. Theory Tech., vol.64, no.1, pp.226-238, 2016. 2. X. J. Bi*, et al, “Analysis and design of gain enhanced cascade stage utilizing a novel passive compensation network,” IEEE Trans. Microw. Theory Tech., vol.61, no.8, pp.2892-2900, 2013. (Best student paper award of 2014 IEEE Singapore MTT/AP Chapter). 3. X. J. Bi, et al, “An Ultra-Large Dynamic Range CMOS Transimpedance Amplifier with Automatically-Controlled Multi-Current-Bleeding Paths,” IEEE Trans. Circuits Syst. I, Reg. Papers. (Accepted). 4. X.J. Bi, X. Zeng, et al, “Slotline-Based Balanced Filter With Ultra-Wide Stopband and High Selectivity,” in IEEE Transactions on Circuits and Systems II: Express Briefs. 2019. 5. L.H. Wang, X.J. Bi*, et al “Octo-Band Bandpass Filter Based on Unequal-Width Cruciform Connected Resonator with Sharp Skirt,” in IEEE Transactions on Circuits and Systems II: Express Briefs. 2019. 6. Z.L. Cao, X.J. Bi*, et al, “Reflectionless triple-band BPF by reused even-mode resonances of multi-mode resonator,” in IET Electronics Letters.2019. 7. X. Zeng, X. Bi*, “Slotline-Based Balun with Wide Bandwidth and High Isolation,” 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), Beijing, 2018. 8. X. J. Bi, Q. Ma, et al, “A Compact Switchable Filtering Diplexer Based on Reused L-Shaped Resonator,” IEEE Trans. Circuits Syst. II, Exp. Briefs. vol. 65, no. 12, pp. 1934-1938, Dec. 2018. 9. X. J. Bi, Q. Ma, et al, “A High-Selectivity Quad-Band Bandpass Filter Utilizing Asymmetrical Interdigital Coupled Lines and Circular Spiral Lines,” IEEE Microw. Wireless Compon. Lett., vol. 28, no. 9, pp. 792-794, Sept. 2018. 10. X. J. Bi*, et al, “Passives design for a high performance W-band amplifier,” in IEEE MTT-S Int. Microwave Symp. Dig., pp.1-3, Seattle, USA, Jun. 2013. (Student paper finalist) 11. X. J. Bi*, et al, “A 19.2 mW, >45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS,” IEEE Microw. Wireless Compon. Lett., vol.23, no.5, pp.261-263, 2013. 12. Q.F. Xu, X.J. Bi*, G.A. Wu, “Ultra-compacted sub-terahertz bandpass filter in 0.13 μm SiGe,” IET Electronics Letter, vol 48, Issue 10, 2012. 13. X. J. Bi*, et al, “A 60-GHz 1-V supply band-tunable power amplifier in 65-nm CMOS,” IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 58, no.11, pp. 719–723, Nov. 2011. 14. Y. Shang, H. Yu, Y. Liang, X.J Bi and M. A Arasu, “Millimeter-wave Sources at 60 GHz and 140 GHz by Magnetic Plasmon Waveguide based In-phase Coupled Oscillator Network in 65-nm CMOS,” IEEE Trans. Microw. Theory Tech., vol. 64, no. 5, pp. 1560-1571, 2016. 15. Y. Shang, H. Yu, S.M Hu, Y. Liang, X.J Bi and M. A Arasu, “High-Sensitivity CMOS Super-Regenerative Receiver with Quench-Controlled High-Q Metamaterial Resonator for Millimeter- Wave Imaging at 96 and 135 GHz,” IEEE Trans. Microw. Theory Tech., vol.62, no.12,pp. 3095-3106, 2014. 16. X. J. Bi*, “Silicon-based W-band Radiometers for Passive Imaging,” IEEE Asia-Pacific Conference on Antennas and Propagation, 2018 (Invited) 17. X.J Bi*, et al; “60 GHz Unilateralized CMOS Differential Amplifier,” International Conference on Microwave and Millimeter-Wave Technology, Chengdu, China. 2010 (Best student paper award) 18. X. J. Bi*, et al, “A Monolithic InGaP/GaAs HBT PA for TD-SCDMA Handset Application,” Chinese Journal of Semi-Conductors, 2008, 29 (10):1868-1872 (Cover-page paper)
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