程然 - 浙江大学 - 信息与电子工程学院

个人简介

程然浙江大学集成电路学院副教授，本科和博士毕业于新加坡国立大学计算机与电气工程系，从事逻辑器件可靠性、存算一体器件和芯片、低温高性能计算等方面的研究工作。在纳米级器件工艺研发、铁电存算一体技术以及低温可靠性表征领域有着丰富的经验和突出的成果。她在领域内的顶会和旗舰期刊发表成果70余篇。工作曾被知名半导体网站Semiconductor Engineering作为亮点报道。她多次受邀为国际半导体相关器件会议做大会报告，也受邀为半导体器件期刊撰写综述文献。目前担任IEEE多个器件会议的TPC成员。主持多项重要纵向项目，包括浙江省科技厅“尖兵”项目、浙江省自然科学基金委重大项目等。教学方面，在浙大开展了一系列本科生和研究生的全英文课程。本科生全英文课程《Semiconductor Fundamentals》受到学生们的好评并获得过全国“电子信息类青年教师教学竞赛”二等奖和华东区一等奖。课题组长期欢迎硕士生，博士生以及博士后的加入（注一），联系方式 chengran@zju.edu.cn. 奖励荣誉 2015年美国电化学协会年度最佳青年撰稿人奖 2019年浙江大学信电学院先进工作者 2022年第六届全国高等学校电子信息类专业青年教师授课竞赛华东赛区一等奖 2022年浙江大学微纳电子学院先进工作者 2023年第六届全国高等学校电子信息类专业青年教师授课竞赛全国二等奖 2023年华为菁英人才贡献奖教金获得者 2024年第八届全国高等学校电子信息类专业青年教师授课竞赛华东赛区一等奖、 2024年第八届全国高等学校电子信息类专业青年教师授课竞赛全国二等奖 2024年IEEE ICICDT优秀TPC贡献奖 2024年浙江大学研究所“五好”导学团队

研究领域

FeFET铁电晶体管的可靠性研究基于量子计算的低温逻辑器件研究新型半导体器件工艺技术新型半导体器件与电路的可靠性模型器件物理研究

近期论文

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Z. Ding, X. Li, C. Jin, X. Yu, B. Chen, R. Cheng*, and Genquan Han, "Experimental Demonstration of Non-volatile Boolean Logic with Field Configurable 1FeFET-1RRAM Technology,"EEE Elec. Dev. Lett., vol. 45, early access, 2024. DOI: 10.1109/LED.2024.3390403 Y. Sun, Y. Gu, J. Wan, X. Yu, B. Chen, D. Gao, R. Cheng*, and G. Han, "An Experimentally Verified Temperature Dependent Drain Current Fluctuation Model for Low Temperature Applications, "IEEE J. Elec. Dev. Soc., vol. 12, pp.345-349, 2024. DOI: 10.1109/JEDS.2024.3388840 Y. Sun , Y. Gu, K. Xu , D. Liu , B. Chen, X. Xu, R. Cheng* , and G. Han, "A Universal Temperature-Dependent Carrier Backscattering Model for Low-Temperature High-Performance CMOS Applications," IEEE Trans. Elec. Dev., IEEE Trans. Elec. Dev., vol. 71, no. 1, pp. 107-113, 2024. DOI: 10.1109/TED.2023.3305963 程然, 李博, 王宗巍, 张结印, 单伟伟, 张建军, 韩根全. 面向高性能计算的低温芯片技术: 发展和挑战. 中国科学: 信息科学, 2024, 54(1): 88–101. DOI: 10.1360/SSI-2023-0347 R. Cheng, X. Li, Y. Zeng et al., "Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf0.5Zr0.5O2 ferroelectric field effect transistors," Solid-State Electronics 205, 108657 (2023). DOI: 10.1016/j.sse.2023.108657. G. Han et al., “Ferroelectric Devices for Intelligent Computing,” Intelligent Computing, vo. 2022, 9859508, 2022. R. Cheng, Y. Sun, Y. Qu et al., "Nano-scaled transistor reliability characterization at nano-second regime," Science China: Information Science 64, 209401 (2021).DOI: 10.1007/s11432-020-3088-3. (Invited) Y. Sun, X. Yu, R. Zhang, B. Chen,R. Cheng, "The past and future of multi-gate field-effect transistors: Process challenges and reliability issues," J. Semicond., X42(2): 023102,2021. doi: 10.1088/1674-4926/42/2/023102. R. Cheng, Z. Chen, S. C. Yuan, M. Takenaka, S. Takagi, G. Q. Han, R. Zhang, "Mobility enhancement techniques for Ge and GeSn MOSFETs," J. Semicond., 42(2): 023101, 2021. doi: 10.1088/1674-4926/42/2/023101. R. Cheng, L. Yin, X. Yu, Y. Zhang, Z. Zheng, W. Wu, B. Chen, X. Liu, P. Ye, and Y. Zhao, “Experimental investigation on ballistic carrier transport characteristics of sub-100 nm Ge MOSFETs,” IEEE Elec. Dev. Lett., vol. 38, no. 4, pp.434, 2017. R. Cheng, X. Yu, B. Chen, J. Li, Y. Qu, J. Han, R. Zhang, and Y. Zhao, “Investigation of Self-heating Effect on Ballistic Transport Characterization for Si FinFETs featuring Ultrafast Pulsed IV Technique,” IEEE Trans. Elec. Dev., vol. 64, no. 3, pp. 909, 2017. X. Yu, R. Cheng, W. Liu, Y. Qu, B. Chen, J. Lu, and Y. Zhao, "Fast Vth Measurement (FVM) Techniquefor NBTI Behavior Characterization," IEEE Elec. Dev. Lett., vol. 39, no. 2, pp.172, 2018. X. Yu, R. Cheng, J. Sun, Y. Qu, J. Han, B. Chen, and Y. Zhao, "Quantitative Characterization of Fast-Trap Behaviors in Al2O3/GeOx/Ge pMOSFETs," IEEE Trans. Elec. Dev., vol. 65, no. 7, pp. 2729, 2018. W. Chen, R. Cheng, D.-W. Wang, H. Song, X. Wang, H. Chen, E. Li, W.-Y. Yin, and Y. Zhao, “Electrothermal Effects on Hot-Carrier Reliability in SOI MOSFETs—AC Versus Circuit-Speed Random Stress,” IEEE Trans. Elec. Dev., vol. 63, pp. 3669, 2016.