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个人简介

李书平,男,博士、教授。现任厦门大学物理学科与技术学院副院长。一直从事半导体光电子材料与器件的理论与实验研究,近年来主要开展GaN基外延技术研究,完成了波长小于280nm的深紫外LED外延,并实现波长定制可调。主持过福建省自然科学基金,国家高技术研究发展计划(863计划)项目子课题等项目;已在Nanotechnology、Appl. Phys. Lett.等国内外学术刊物上发表论文100多篇,申请多项国家发明专利,获得厦门市科学技术进步三等奖1项。

研究领域

半导体光电子材料与器件的理论与实验研究

近期论文

查看导师最新文章 (温馨提示:请注意重名现象,建议点开原文通过作者单位确认)

Optical properties of InN studied by spectroscopic ellipsometry, Journal of Semiconductors 37(10), 102002 (2016) Improved characteristics of ultraviolet AlGaN multiplequantum-well laser diodes with step-graded quantum barriers close to waveguide layers, Superlattices and Microstructures 97, 1-7 (2016) Enhanced magneto-optical effects in composite coaxial nanowires embedded with Ag nanoparticles, Scientific Reports, 6, 29170 (2016) Optimized design of multi-shell ZnO/TiO2/ZnSe nanowires decorated with Ag nanoparticles for photocatalytic applications, RSC Adv., 6, 71800–71806 (2016) 高Al 组分AlGaN 多量子阱结构材料发光机制探讨, 发光学报 37(5), 513-518 (2016) Family of Cu@metal nanowires network for transparent electrodes on n-AlGaN, Phys. Status Solidi A 213(5) , 1209–1212 (2016) Performance enhancement of AlGaN deep-ultraviolet lightemitting diodes with varied superlattice barrier electron blocking layer, Appl. Phys. A 122, 527 (2016) Mg杂质调控高Al组分AlGaN光学偏振特性, 厦门大学学报(自然科学版) 55(2), 237-243 (2016) Modified pulse growth and misfit strain release of an AlN heteroepilayer with a Mg–Si codoping pair by MOCVD, J. Phys. D: Appl. Phys. 49, 115110 (2016) Size effect on morphology and optical properties of branched ZnO/Si nanowire arrays, Physics Letters A 380, 1044–1048 (2016) Improved p-type conductivity in Alrich AlGaN using multidimensional Mg-doped superlattices, Scientific Reports 6, 21897 (2016) 应变 AlN表面生长动力学, 厦门大学学报(自然科学版)54(3) 378-383 (2015) 分布式布拉格反射与小面积金属接触复合三维电极结构的 AlGaN基紫外LEDs设计, 厦门大学学报(自然科学版)54(4) 504-511 (2015) Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection, SCIENTIFIC REPORTS 5:17227 (2015) Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer, SUPERLATTICES AND MICROSTRUCTURES 85:59-66(2015) Ultrawide photoresponse in ZnO/ZnSe coaxial nanowires with a threshold of 0.8 eV, INTERNATIONAL JOURNAL OF HYDROGEN ENERGY 40(34):10788-10794(2015) Electro-optic Coefficient Enhancement of AlxGa1-xN via Multiple Field Modulations, ACS APPLIED MATERIALS & INTERFACES 7(32):17707-17712 (2015) Facile synthesis of composition-tuned ZnO/ZnxCd1-xSe nanowires for photovoltaic applications, Nanoscale Research Letters 10:181 (2015) Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier, IEEE PHOTONICS JOURNAL 7(1): 1400110 (2015) Beneficial effect of alloy disorder on the conversion efficiency of ZnO/ZnxCd1-xSe coaxial nanowire solar cells, JOURNAL OF MATERIALS CHEMISTRY A 3(12), 6360-6365 (2015)

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