个人简介
2015年8月至今，厦门大学物理学系，教授;
2015年7月至2016年8月，美国橡树岭国家实验室，访问学者；
2010年8月至2015年7月，厦门大学物理学系，副教授;
2007年7月-2010年7月，厦门大学物理学系，助理教授；
2002年9月至2007年7月，华东师范大学物理系，博士；
1998年9月至2002年7月，华东师范大学物理系，学士
研究领域
二维半导体材料及其器件、宽禁带半导体功率电子器件、新型纳米结构太阳能电池、旋光二极管、表面物理以及自旋输运
近期论文
查看导师新发文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
1. Layer-dependent dielectric modulation in WS2/GaN heterostructures, Phys. Rev. B, 2023, 107, 085304
2. Vertically aligned ZnO nanoarray directly orientated on Cu paper by h-BN monolayer for flexible and transparent piezoelectric nanogenerator, Nano Energy, 2023, 109 108265
3. Modulation of Valley Dynamics in Hybrid H/T Phase Monolayer WSe2. Laser Photonics Review 2022, 10: 00416
4. Nonvolatile Electrical Valley Manipulation in WS2 by Ferroelectric Gating，ACS NANO, 2022, 16 (12), 20598-20606.
5. High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier, Nanoscale Res. Lett.，2022, 17, 74
6. Direct synthesis of moiré superlattice through chemical vapor deposition growth of monolayer WS2 on plasma-treated HOPG, Nano Research, 2022, 1-8
7. Modulating the intralayer and interlayer valley excitons in WS2 on AlGaN substrate, SCIENCE CHINA Materials, 2022
8. Controllable Growth of 2H-1T′ MoS2/ReS2 Heterostructures via Chemical Vapor Deposition, Applied Surface Science, 2022, 572, 151438
9. Improvement of Interfacial Properties of 4H-SiC/SiO2 by Nitrogen Plasma Treatment, IEEE Xplore Digital Library, 2021: 13-16.
10. Engineering sulfur vacancies in WS2/Au interface toward ohmic contact, Applied Physics A, 2021,127:644
11. Review of Anisotropic 2D Materials: Controlled Growth, Optical Anisotropy Modulation, and Photonic Applications, Laser Photonics Rev. 2021, 2100322
12. Enhancement of Room-Temperature Photoluminescence and Valley Polarization of Monolayer and Bilayer WS2 via Chiral Plasmonic Coupling, ACS Appl. Mater. Interfaces 2021, 13, 35097-35104
13. Competitive and cooperative electronic states in Ba(Fe1−xTx)2As2 with T = Co, Ni, Cr, npj Quantum Materials,2021, 6, 89
14. Controllable enormous valley splitting in Janus WSSe on CrN monolayer, J. Phys. D: Appl. Phys. 2021, 54, 425304
15. Facile synthesis of two-dimensional MoS2/WS2 lateral heterostructures with controllable core/shell size ratio by a one-step chemical vapor deposition method, SCIENCE CHINA Physics, Mechanics & Astronomy, 2021, 64,107311
16. Enhanced Valley Splitting in Monolayer WSe2 by Phase Engineering, ACS Nano 2021, 15, 5, 8244-8251
17. Enhanced Photoresponse in GeSe-Based Phototransistors by Ferroelectric Gating, Phys. Status Solidi RRL 2021, 2100111
18. Strain modulation of the spin-valley polarization in monolayer manganese chalcogenophosphates alloys, J. Phys.: Condens. Matter, 2021, 33, 295503
19. Manipulation of the Magnetic Properties of Janus WSSe Monolayer by the Adsorption of Transition Metal Atoms, Nanoscale Res Lett., 2021, 16:104
20. Enormous Valley Splitting in Monolayer WS2 by Coupling with an N-Terminated GaN Substrate, Phys. Status Solidi RRL 2021, 15, 2000493
21. Optimized design of 4H-SiC UMOSFET for high breakdown voltage, Proc. of SPIE , 2020, 11567, 115673Y-1
22. Room-temperature spin injection and optical polarization in nitride-based blue and ultra-violet spin light-emitting diodes, Applied Physics Express, 2020, 13, 123001
23. Gradient engineered light absorption layer for enhanced carrier separation efficiency in perovskite solar cells, Nanoscale Research Letters, 2020, 15,127
24. Enhanced carrier separation efficiency and performance in planar-structure perovskite solar cells through an interfacial modifying layer of ultrathin mesoporous TiO2, Journal of Power Sources, 2020, 465, 228251
25. Reduced turn-on voltage and boosted mobility in monolayer WS2 transistors by mild Ar+ plasma treatment，ACS Appl. Mater. Interfaces, 2020, 12, 19635-19642
26. Modulating room temperature spin injection into GaN towards the high-efficiency spin-light emitting diodes， Applied Physics Express, 2020, 13, 04300
27. Magnetism manipulation of Con-adsorbed monolayer WS2 through charge injection, Journal of Physics: Condensed Matte., 2020, 32, 275001
京公网安备 11010802027423号