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1. M. M. Liang, G. E. Weng, J. Y. Zhang, X. M. Cai, X. Q. Lv, L. Y. Ying and B.
P. Zhang*, “Influence of barrier thickness on the structural and optical
properties of InGaN/GaN multiple quantum well”, Chinese Physics B, 23 (5),
054211 (2014).
2. L. Sun, G. E. Weng, M. M. Liang, L. Y. Ying, X. Q. Lv, J. Y. Zhang, B. P.
Zhang, “Influence of p-GaN annealing on the optical and electrical properties of
InGaN/GaN MQW LEDs”, Physica E, 60, 166-169 (2014).
3. X. Q. Lv, P. Jin, H. M. Chen, Y. H. Wu, F. F. Wang, and Z. G. Wang,
“Broadband light emission from chirped multiple InAs quantum dot structure”,
Chinese Physics Letters, 30 (11), 118102 (2013).
4. X. Q. Lv, S. W. Chen, J. Y. Zhang, L. Y. Ying, and B. P. Zhang, “Tuning
properties of external cavity violet semiconductor laser”, Chinese Physics
Letters, 30 (7), 074204 (2013).
5. X. M. Cai, Y. Wang, Z. D. Li, X. Q. Lv, J. Y. Zhang, L. Y. Ying, and B. P.
Zhang, “Improved photovoltaic performance of InGaN/GaN solar cells with
optimized transparent current spreading layers”, Applied Physics A, (2013).
6. G. E. Weng, B. P. Zhang, M. M. Liang, X. Q. Lv, J. Y. Zhang, L. Y. Ying, Z.
R. Qiu, H. Yaguchi, S. Kuboya, K. Onabe, S. Q. Chen, and H. Akiyama, “Optical
properties and carrier dynamics in asymmetric coupled InGaN multiple quantum
wells”, Functional Materials Letters, 6, 1350021 (2013).
7. X. Q. Lv, J. Y. Zhang, L. Y. Ying, W. J. Liu, X. L. Hu, B. P. Zhang, Z. R.
Qiu, S. Kuboya, and K. Onabe, “Well-width dependence of the emission-linewidth
in ZnO/MgZnO quantum wells”, Nanoscale Research Letters, 7, 605 (2012).
8. X. K. Li, P. Jin, Q. An, Z. C. Wang, X. Q. Lv, H. Wei, J. Wu, J. Wu, and Z.
G. Wang, “Experimental investigation of wavelength-selective optical feedback
for a high-power quantum dot superluminescent device with two-section
structure”, Optics Express, 20 (11), 11936-11943 (2012).
9. X. K. Li, P. Jin, Q. An, Z. C. Wang, X. Q. Lv, H. Wei, J. Wu, J. Wu, and Z.
G. Wang, “Improved continuous-wave performance of two-section quantum-dot
superluminescent diodes by using epi-down mounting process”, IEEE Photonics
Technology Letters, 24 (14), 1188-1190 (2012).
10. X. L. Hu, W. J. Liu, G. E. Weng, J. Y. Zhang, X. Q. Lv, M. M. Liang, M.
Chen, H. J. Huang, L. Y. Ying, and B. P. Zhang. “Fabrication and
characterization of high-quality factor GaN-based resonant-cavity blue
light-emitting diodes”, IEEE Photonics Technology Letters, 24 (17) 1472-1474,
(2012).
11. X. Q. Lv, J. Y. Zhang, W. J. Liu, X. L. Hu, M. Chen, and B. P. Zhang,
“Optical properties of ZnO/MgZnO quantum wells with graded thickness”, Journal
of Physics D: Applied Physics, 44, 365401 (2011).
12. J. Wu, X. Q. Lv, P. Jin, X. Q. Meng, and Z. G. Wang, “Broadband tunable
external cavity laser using a bent-waveguide quantum-dot superluminescent diode
as gain device”, Chinese Physics B, 20 (6), 064202 (2011).
13. Z. C. Wang, P. Jin, X. Q. Lv, X. K. Li, and Z. G. Wang, “High-power quantum
dot superluminescent diode with integrated optical amplifier section”,
Electronics Letters, 47 (21), 1191-1193 (2011).
14. X. K. Li, P. Jin, Q. An, Z. C. Wang, X. Q. Lv, H. Wei, J. Wu, J. Wu, and Z.
G. Wang, “A high-performance quantum dot superluminescent diode with a
two-section structure”, Nanoscale Research Letters, 6, 625 (2011).
15. X. Q. Lv, P. Jin, and Z. G. Wang, “Broadly tunable grating-coupled external
cavity laser with quantum-dot active region”, IEEE Photonics Technology Letters,
22 (24), 1799-1801 (2010).
16. X. Q. Lv, P. Jin, W. Y. Wang, and Z. G. Wang, “Broadband external cavity
tunable quantum dot lasers with low injection current density”, Optics Express,
18 (9), 8916-8922 (2010).
17. X. Q. Lv, P. Jin, and Z. G. Wang, “A broadband external cavity tunable
InAs/GaAs quantum dot laser by utilizing only the ground state emission”,
Chinese Physics B, 19 (1), 018104 (2010).
18. Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, “Self-assembled
quantum-dot superluminescent light-emitting diodes”, Advances in Optics and
Photonics, 2, 201-228 (2010).
19. X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband emitting
superluminescent diodes with InAs quantum dots in AlGaAs matrix”, IEEE Photonics
Technology Letters, 20 (20), 1742-1744 (2008).
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