刘翠霞 - 西安工业大学 - 材料与化工学院

个人简介

2004年至2009年：西北工业大学材料学院，博士 2001年至2004年：西安工程大学纺织学院，硕士 1997年至2001年：西安工程大学纺织学院，学士工作经历 2009年至现在：西安工业大学，副教授

研究领域

现从事红外晶体生长及计算机模拟研究工作。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1] Cuixia Liu, Zengyun Jian, Man Zhu, Lianyang Chen. First-principle study of stacking fault energy for ZnSe single crystal. Computational Materials Science, 2015 96: 81-84. (SCI AT4XU ) [2] 刘翠霞,坚增运,罗贤,王宇鹏.碘输运法对CVT法制备ZnSe单晶的性能影响研究.稀有金属材料与工程，2014 43(4):866-869 (SCI AG5VW) [3] Cuixia Liu, YanQing Yang, Man Zhu, Chen Yang. Influence of CH3SiCl3 Consistency on Growth Process of SiC Film by Kinetic Monte Carlo Method. Journal of WuHan University of Technology Material Science. 2012 27(5):1008-1012 (SCI：029CW) [4] CuixiaLiu,YanqingYangXianLuo. Grain-scale Growth Simulation of SiC Film with the Chemical Vapor Deposition. Method. Computational Materials Science.2012,59:128-132(SCI927UC) [5] CuixiaLiu,YanqingYangXianLuo.A three-dimensional atomic-scale simulations of CVD-SiC film growth in {111}, {110} and {100} family of planes. Computational Materials Science.2011,50(8):2338-2346 (SCI773CD) [6] Cui-xia Liu, Yan-Qing Yang, Rong-Jun Zhang, Xian Luo. Grain Growth Simulation of {111} and {110} Oriented CVD-SiC Film by Potts Monte Carlo. Computational Materials Science. 2009, 44: 1281-1285 (SCI: 412CA , EI: 090511884394) [7] C.X.Liu, Y.Q.Yang, X.Luo, R.J.Zhong, B.Huang. Multi-length Scale Monte Carlo Simulation of the Growth Process of SiC Film by Chemical Vapor Deposition. Applied Surface Science. 2008, 255(5): 3342-3349 (SCI:378CR, EI: 084911767777) [8] Cui Xia Liu, Y.Q.Yang, R.J.Zhang, X.X.Ren. Kinetic Monte Carlo Simulation of {111}-Oriented SiC Film with Chemical Vapor Deposition. Computational Materials Science. 2008, 43(4): 1036-1041 (SCI: 372QR, EI: 084111629193) [9] 刘翠霞, 杨延清, 黄斌, 张荣军, 罗贤, 任晓霞. 化学气相沉积SiC膜{111}取向生长的原子尺度模拟. 无机材料学报. 2008, 23(5): 933-937 (SCI:355DY , EI: 084111636647) [10] Cuixia Liu Yanqing Yang, Luo Xian.Influence of deposition temperature on tensile behavior and fracture characteristics of SiC Filament by Chemical Vapor Deposition. Advanced Materials Research. 2011,146-147: 1159-1162 (Ei20110113539107) [11] Cuixia Liu, Zengyun Jian, Man Zhu. Study for Preparation and Photoelectric Property of ZnSe Crystal. Advanced Materials Research. 2011,156-157: 1101-1104 (Ei20110113554255) [12] Cuixia Liu Yanqing Yang, Luo Xian.Influence of substrate material on tensile behavior and fracture characteristics of SiC by chemical vapour deposition. Advanced Materials Research. 2011, 213:272~275(Ei 20111113742676) [13] Cuixia Liu Yanqing Yang, Luo Xian Effect of carbon coating on tensile strength of SiC filament by Chemical Vapor Deposition. Advanced Materials Research. 2011, 291-294 :57~60(Ei 20113214222507)