研究领域

nanotechnology, atomic layer deposition, semiconductor processing at nanoscale dimensions, electronic materials

Because the development of nano-materials and devices and their integration into functioning nano-systems is reliant on powerful nanofabrication techniques, developing and exploiting nanofabrication is a strategic focus of Dr. Cadien's research. Dr. Cadien has made many significant breakthroughs in all aspects of chemical mechanical polishing which are documented in his many patents. Dr. Cadien also has been responsible for numerous breakthroughs in optical interconnects and plasmons, and in several other areas of semiconductor processing.

近期论文

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"Effects of viscosity-dependent diffusion in the analysis of rotating disk electrode data", J.H. Han, A. M. Bowen, T.N. Andryushchenko, R.P. Chalupa, A.E. Miller, H.S. Simka, K.Cadien, S. Shankar, Journal of Applied Electrochemistry, 38, 1-5, (2008) "Surface plasmon induced polarization rotation and optical vorticity in a single mode dielectric waveguide", P. S. Davids, B. A. Block, M. R. Reshotko, and K. Cadien, Optics Express, 15, 9476 (2007) "Surface plasmon polarization filtering in a single mode dielectric waveguide", P. S. Davids, B. A. Block, and K. Cadien, Optics Express, 13, 7063 (2005) "Effects of K3[Fe(CN)6] slurry's pH value and applied potential on tungsten removal rate for chemical-mechanical planarization application", S.B. Akonko, D.Y. Li, M. Ziomek-Moroz, J. Hawk, A. Miller, K. Cadien, Wear, 259, 1299(2005) K. Cadien, M.R. Reshotko, B. A. Block, A.M. Bowen, D.L. Kencke, and P. Davids, "Challenges for on-chip optical interconnects", Proc. SPIE 5730, 133 (2005) "On-chip optical interconnects", M.J.Kobrinsky, B.A.Block, J.-F.Zheng, B.C.Barnett, E.Mohammed, M.Reshotko, F.Robertson, S.List, I. Young, and K.Cadien, Intel Technology Journal, 8, No.2, (2004) pp129-143, http://www.intel.com/technology/itj/2004/volume08issue02/art05_on-chip/p01_abstract.htm "An overview of the corrosion-wear interaction for planarizing metallic thin films", M. Ziomek-Moroz, A. Miller, J. Hawk, K. Cadien, D. Li, Wear of Materials, 255, 869(2003) "Advances in characterization of CMP consumables", M.Moinpour, A.Tregub, A.Oehler, and K.Cadien, MRS Bulletin, 27, 766(2002) "Chemically induced defects during copper polish", A.E.Miller, P.B.Fischer, A.D.Feller, and K.C.Cadien, Proceedings of the IEEE International, 2001. pp 143-145 "Current Issues and Future Trends in Chemical Mechanical Polishing", K.Cadien, S. Moroimoto, A. Philipossian, S. Sivaram, Y. Takamori, ULSI production technical urgent report No.4 : In the mass production line the actual condition and future plan of the CMP, Cord/code No 0224, published in January 1997, by Science Forum, Inc, Japan. "Plasma etching of silicon in SF6", Y.-J. Lii, J.Jorne, K.C.Cadien, and J.E.Schoenholtz, J. Electrochem. Soc., 137, 3633(1990) "Plasma etching of silicon in SF6 - Experimental and reactor modeling", Y.-J. Lii, J.Jorne, K.C.Cadien, and J.E.Schoenholtz, J. Electrochem. Soc., 135, C126(1988) "Kinetics of rapid thermally nitrided titanium", S. Sivaram and K.C.Cadien, J. Electrochem. Soc., 134, C467(1987) "Development of a test bed system for high melting temperature alloy fabrication and mass spectroscopy analysis of liquid metal ion sources", R.H.Higuchi-Rusli, J.C.Corelli, A.J.Steckl, and K.C.Cadien, J.Vac.Sci.Technol. A5, 2073(1987) "Development of boron liquid metal ion sources for focused ion beam systems", R.H.Higuchi-Rusli, K.C.Cadien, J.C.Corelli, and A.J.Steckl, J.Vac.Sci.Technol. B5, 190(1987) "Dry etching of TiSi2", K.Cadien, S.Sivaram, and C.Reitsema, J.Vac.Sci.Technol. A4, 739(1986) "Reactive ion etching of SiC thin films using fluorinated gases", J.Sugiura, W.-J.Lu, K.C.Cadien, and A.J.Steckl, J.Vac.Sci.Technol. B4, 349(1986) "An extension of the Engel-Brewer correlation to transition metal silicides", S.Sivaram, P.J.Ficalora, K.C.Cadien, J.Appl.Phys. 58, 1314(1985) "Phase transitions in ion-mixed metastable (GaSb)1-x Gex semiconducting alloys", K.C.Cadien, B.Muddle, and J.E.Greene, J.Appl.Phys. 55, 4177(1984) "A method for eliminating hillocks in integrated circuit metallizations", K.C.Cadien and D.L.Losee, J.Vac.Sci.Technol. B2, 82(1984) "Raman scattering from metastable (GaSb)1-x Gex semiconducting films", T.N.Krabach, N.Wada, M.V.Klein, K.C.Cadien, and J.E.Greene, Solid State Commun. 45, 895(1983) "Crystal growth and controlled doping of epitaxial Ge films on (100) GaAs by sputter deposition", K.C.Cadien and J.E.Greene, J. Crystal Growth 61, 15(1983) "GaSb-Ge pseudobinary phase diagram", S.I.Shah, K.C.Cadien, and J.E.Greene, J.Electronic Materials 11, 52(1982) "Ion mixing effects during film deposition: growth of metastable semiconducting and metallic alloys", K.C.Cadien, M.A.Ray, S.M.Shin, J.M.Rigsbee, S.A.Barnett, and J.E.Greene, J.Vac.Sci.Technol. 20, 370(1982) "Growth of high quality epitaxial Ge films on (100) Si by sputter deposition", G.Bajor, K.C.Cadien, M.A.Ray, J.E.Greene, and P.S.Vijayakumar,Appl.Phys.Lett. 40, 696(1982)