Shi, Jian - Rensselaer Polytechnic Institute - Department of Materials Science and Engineering

个人简介

Academic Appointments Professor, Materials Science and Engineering, Rensselaer Polytechnic Institute, 2024-present Professor, Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, 2024-present Simons Foundation Pivot Fellow, Quantum Engineering, the Pritzker School of Molecular Engineering, University of Chicago, 2024 Visiting Scholar, Quantum Engineering, the Pritzker School of Molecular Engineering, University of Chicago, 2023 Associate Professor, Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, 2023-2023 Associate Professor, Materials Science and Engineering, Rensselaer Polytechnic Institute, 2019-2023 Assistant Professor, Materials Science and Engineering, Rensselaer Polytechnic Institute, 2014-2019 Education & Training Postdoc in Applied Physics at Harvard University, 2014. Ph.D. in Materials Science at the University of Wisconsin at Madison in 2012. M.S. in Mechanical Engineering at the University of Missouri at Columbia in 2008. B.S. in Materials Science and Engineering at Xi'an Jiaotong University in China in 2006.

研究领域

My group works on obtaining basic understanding on the roles of photon, carrier momentum, symmetry and phonon of novel materials on the transport behaviors, spin dynamics and optoelectronic properties and developing experimental approaches and solutions on searching for new electronic materials and device structures towards energy-efficient, high-performance spin and quantum computing. Materials of interest include van der Waals solids with strong spin-orbit coupling, polar and ferroelectric crystals, chiral crystals, materials with tunable Berry parameters, and Rashba and Dresselhaus materials. We use optical, optoelectronic and transport approaches to investigate the polar, spintronic, chiral and topological properties.

近期论文

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Jia R, Xin Y, Potter M, Jiang J, Wang Z, Ma H, Zhang Z, Liang Z, Zhang L, Lu Z, Yang R, Pendse S, Hu Y, Peng K, Meng Y, Bao W, Liu J, Wang GC, Lu TM, Shi Y, Gao H, Shi J.Long-Distance Remote Epitaxy, Nature, 2025, 10.1038/s41586-025-09484-z, 2025. Briscoe J, Shi J.Photogalvanic effects in non-centrosymmetric halide perovskites, Nat. Rev. Phys., 2025, 10.1038/s42254-025-00822-8. Aglagul D, Shi J.Strain Induced Kramers-Weyl Phase in III-V Zinc Blende Systems, Appl. Phys. Lett., 2025, 126, 083102. Zhang L, Jiang J, Multunas C, Ming C, Chen Z, Hu Y, Lu Z, Pendse S, Jia R, Chandra M, Sun Y-Y, Lu T-M, Ping Y, Sundararaman R, Shi J.Room-temperature electrically switchable spin–valley coupling in a van der Waals ferroelectric halide perovskite with persistent spin helix, Nat. Photonics, 2022, 10.1038/s41566-022-01016-9. Jiang J, Zhang L, Ming C, Zhou H, Bose P, Guo Y, Hu Y, Wang B, Chen Z, Jia R, Pendse S, Xiang Y, Xia Y, Lu Z, Wen X, Cai Y, Sun C, Wang G-C, Lu T-M, Gall D, Sun Y-Y, Koratkar N, Fohtung E, Shi Y, Shi J.Giant Pyroelectricity in Nanomembranes, Nature, 2022,607, 480–485. Zhang L, Jiang J, Hu Y, Lu Z, Wen X, Pendse S, Jia R, Wang G-C, Lu T-M, Shi J.Liquid-Phase van der Waals Epitaxy of a Few-Layer and Unit Cell Thick Ruddlesden-Popper Halide Perovskite. J. Am. Chem. Soc., 2022, 144, 38, 17588. Jiang J, Chen Z, Hu Y, Xiang Y, Zhang L, Wang Y, Wang GC, Shi J.Flexo-Photovoltaic Effect in MoS2. Nat. Nanotechnol., 2021, DOI: 10.1038/s41565-021-00919-y. Hu Y, Florio F, Chen Z, Phelan W. A., Siegler M. A., Zhou Z, Guo Y, Hawks R, Jiang J, Feng J, Zhang L, Wang B, Wang Y, Gall D, Palermo E. F., Lu Z, Sun X, Lu T-M, Zhou H, Ren Y, Wertz E, Sundararaman R, Shi J.A chiral switchable photovoltaic ferroelectric 1D perovskite. Sci. Adv., 2020, 6, eaay4213. Guo Y, Sun X, Jiang J, Wang B, Chen X, Yin Y, Qi W, Gao L, Zhang L, Lu Z, Jia R, Pendse S, Hu Y, Chen Z, Wertz E, Gall D, Feng J, Lu TM, Shi J A reconfigurable remotely epitaxial VO2 electrical heterostructure. Nano Lett., 2020, 577 (7789), 171. Shi J. A structurally unstable semiconductor stabilized and enhanced by strain. Nature, 2020, 20, 33. Jiang J, Sun X, Chen X, Wang B, Chen Z, Hu Y, Guo G, Zhang L, Ma Y, Gao L, Zheng F, Jin L, Chen M, Ma Z, Zhou Y, Padture NP, Beach K, Terrones H, Shi Y, Gall D, Lu TM, Wertz E, Feng J, Shi J. Carrier lifetime enhancement in halide perovskite via remote epitaxy. Nat. Commun. 2019, 10, 4145. Wang Y, Sun X, Chen Z, Cai Z, Zhou H, Lu TM, Shi J. Defect-engineered epitaxial VO2±δ in strain engineering of heterogeneous soft crystals. Sci. Adv. 2018, 4, eaar3679.