Wilshaw, Peter R - University of Oxford

研究领域

Characterisation of the electrical and mechanical properties of defects in semiconductors particularly with reference to photovoltaics. Development of novel passivation and gettering techniques for application to photovoltaics. The development of silicon substrates with very high resistivity which are suitable for high frequency active and passive devices. Understanding oxygen and nitrogen diffusion in silicon - Fermi level and strain effects. High resolution 2D mapping of dopant distributions in semiconductors.

近期论文

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Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation Ruy S. Bonilla, Frederick Woodcock and Peter R. Wilshaw J. Appl. Phys. 116, 054102 (2014) Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion Manuel Schnabel, Charlotte Weiss, Philipp Löper, Mariaconcetta Canino, Caterina Summonte, Peter R. Wilshaw and Stefan Janz. J. Appl. Phys. 116, 024315 (2014) A technique for field effect surface passivation for silicon solar cells Ruy S. Bonilla and Peter R. Wilshaw Appl. Phys. Lett. 104, 232903 (2014) Boron Diffusion in Nanocrystalline 3C-SiC M. Schnabel, A. Siddique, M. Canino, C. Weiss, T. Rachow, P. Löper, C. Summonte, S. Mirabella, S. Janz, P. Wilshaw. Applied Physics Letters 104, 213108 (2014) On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation Ruy S. Bonilla, Christian Reichel, Martin Hermle and Peter R. Wilshaw J. Appl. Phys. 115, 144105, 2014 Controlled field effect surface passivation of crystalline n-type silicon and its application to back-contact silicon solar cells R. S. Bonilla, C. Reichel, M. Hermle, S. Senkader, and P. Wilshaw. In 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, pp. 0571�0576.