孙华锐 - 哈尔滨工业大学（深圳）

个人简介

孙华锐任哈尔滨工业大学（深圳）理学院副教授，博士生导师，广东省青年拔尖人才。在加入哈工大深圳之前他在英国布里斯托大学物理学院的器件热成像和可靠性研究中心工作，从事新型金刚石衬底GaN材料系统的导热特性研究，以及GaN基电子器件电学可靠性的研究。孙华锐于2013年在美国密歇根大学安娜堡分校获得博士学位，研究内容是微纳结构中的声子输运。他的研究兴趣包括宽禁带半导体和器件中的热输运和热管理，微纳米尺度热输运及其新型测量技术，以及层状二维材料的声子物理和激子物理等。教育经历 2013 美国密歇根大学（University of Michigan)，博士 2009 美国密歇根大学，硕士 2006 清华大学，学士研究与工作经历 2018- 哈尔滨工业大学（深圳），理学院，副教授，博士生导师 2015- 哈尔滨工业大学（深圳），理学院，副教授 2013-2015 英国布里斯托大学（University of Bristol），物理学院，博士后研究员

研究领域

微纳尺度热输运及声子物理低维材料的力热光电性质 GaN基微电子器件的热管理和可靠性物理微纳尺度新型测量技术

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

B. Zou, X. Wang, Y. Zhou, Y. Zhou, Y. Wu, T. Xing, Y. He, J. Yang, Y. Chen, P. Ren, and H. Sun*, “Optical Effect Modulation in Polarized Raman Spectroscopy of Transparent Layered α-MoO3”, Small 2206932 (2023). S. Zhou, S. Wan, B. Zou, Y. Yang, H. Sun, Y. Zhou, and J. Liang, “Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding”, Crystals, 13(2), 217 (2023). B. Zou, Y. Zhou, Y. Zhou, Y. Wu, Y. He, X. Wang, J. Yang, L. Zhang, Y. Chen, S. Zhou, H. Guo, and H. Sun*, “Reliable and broad-range layer identification of Au-assisted exfoliated large area MoS2 and WS2 using reflection spectroscopic fingerprints”, Nano Res. 15, 8470 (2022). J. Ke, P. Ying, Y. Du, B. Zou, H. Sun, and J. Zhang, “Delamination of MoS2/SiO2 interfaces under nanoindentation”, Phys. Chem. Chem. Phys. 24(26), 15991 (2022). W. Xu, T. You, Y. Wang, Z. Shen, K. Liu, L. Zhang, H. Sun, R. Qian, Z. An, F. Mu, T. Suga, G. Han, X. Ou, Y. Hao, and X. Wang, “Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC”, Fundam. Res. 1, 691–696 (2021). B. Zou#, Y. Wei#, Y. Zhou, D. Ke, X. Zhang, M. Zhang, C.-T. Yip, X. Chen, W. Li*, and H. Sun*, “Unambiguous Determination of Crystal Orientation in Black Phosphorus by Angle-resolved Polarized Raman Spectroscopy”, Nanoscale Horiz. 6, 809 (2021). B. Zou, Z. Wu, Y. Zhou, Y. Zhou, J. Wang, L. Zhang, F. Cao, and H. Sun*, “Spectroscopic Ellipsometry Investigation of Au-Assisted Exfoliated Large Area Single-Crystalline Monolayer MoS2” Phys. Status Solidi Rapid Res. Lett., 2100385 (2021). M. Liu, S. Yang, M. Han, S. Feng*, G.-G. Wang*, L. Dang, B. Zou, Y. Cai, H. Sun*, J. Yu, J.-C. Han, and Z. Liu*, “Controlled Growth of Large-Sized and Phase-Selectivity 2D GaTe Crystals”, Small 17, 2007909 (2021). M. Zhang, B. Zou, X. Zhang, Y. Zhou, and H. Sun*, “Thermal conductivity of exfoliated and chemical vapor deposition-grown tin disulfide nanofilms: Role of grain boundary conductance”, J. Alloys Compd. 856, 158119 (2021). J. Zhou, L. Zhang, H. Sun, J. Zhang, and Z. Zheng, “Effect of chemical reaction on the thermal resistances of nickel/yttria-stablized zirconia interfaces in hydrogen environment”, J. Power Sources 506, 230264 (2021). Y. Feng, H. Sun, X. Yang, K. Liu, J. Zhang, J. Shen, D. Liu, Z. Cai, F. Xu, N. Tang, T. Yu, X. Wang, W. Ge, and B. Shen, “High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer”, Appl. Phys. Lett. 118(5), 052104 (2021). 赵柯臣，赵继文，代兵，张旭，郭怀新，孙华锐，朱嘉琦，“导热金刚石同大尺寸芯片的低温烧结银连接工艺”，固体电子学研究与进展. 41(1), 65 (2021). B. Zou, Y. Zhou, X. Zhang, M. Zhang, K. Liu, M. Gong, and H. Sun*, “Thickness-dependent ultralow in-plane thermal conductivity of chemical vapor-deposited SnSe2 nanofilms: Implications for thermoelectrics”, ACS Appl. Nano Mater. 3(10), 10543 (2020). K. Liu and H. Sun*, “Raman thermometry based thermal resistance analysis of GaN high electron mobility transistors with copper-based composite flanges”, Acta Phys. Sin. 67(2), 028501 (2020) (in Chinese). J. Zhang, Y. Zhou, P. Ying, H. Sun, J. Zhou, T. Wang, W. Jie, and M. Kuball, “Effects of interlayer interactions on the nanoindentation response of freely suspended multilayer gallium telluride”, Nanotechnology 31(16), 165706 (2020). S. Zhu, T. Hu, K. Wu, C.-H. Lam, K. Yao, H. Sun, and C.-T. Yip, “Negative differential resistance effect of blue phosphorene-graphene heterostructure device”, J. Phys. Commun. 4(3), 035005 (2020). C. T. Yip, T. W. Lo, G. Jia, S. Zhu, H. Sun, C.-H. Lam, and D. Lei, “Tight-binding modeling of excitonic response in van der Waals stacked 2D semiconductors”, Nanoscale Horiz. 4, 969 (2019). K. Liu, J. Zhao, H. Sun*, H. Guo, B. Dai, and J. Zhu, “Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance”, Chin. Phys. B 28(6), 060701 (2019). B. Zou, H. Sun*, H. Guo, B. Dai, and J. Zhu, “Thermal characteristics of GaN-on-diamond HEMTs: Impact of anisotropic and inhomogeneous thermal conductivity of polycrystalline diamond”, Diam. Relat. Mater. 95, 28 (2019). Y. Zhou, J. Anaya, J. W Pomeroy, H. Sun, X. Gu, A. Xie, E. Beam, M. Becker, T. A. Grotjohn, C. Lee, and M. Kuball, “Barrier Layer Optimization for Enhanced GaN-on-diamond Device Cooling”, ACS Appl. Mater. Inter. 9(39), 34416 (2017). Y. Zhou, R. Ramaneti, J. Anaya, S. Kornechuk, J. Derluyn, H. Sun, J. W Pomeroy, J. Verbeeck, K. Haenen, and M. Kuball, “Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs”, Appl. Phys. Lett. 111(4), 041901 (2017). L. Zhao, P. Yu, Z. Guo, D. Yan, H. Zhou, J. Wu, Z. Cui, H. Sun, and X. Gu, “Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress”, Chin. Phys. B 26(8), 087308 (2017). T. Brazzini, H. Sun, F. Sarti, J. W. Pomeroy, C. Hodges, M. Gurioli, A. Vinattieri, and M. Kuball, “Mechanism of hot electron electroluminescence in GaN-based transistors”, J. Phys. D: Appl. Phys. 49(43), 435101 (2016). H. Sun*, J. W. Pomeroy, R. B. Simon, D. Francis, F. Faili, D. J. Twitchen, and M. Kuball, “Temperature dependent thermal resistance of GaN-on-diamond HEMT wafers”, IEEE Electron Dev. Lett. 37(5), 621 (2016). D. Liu, H. Sun, J. W. Pomeroy, D. Frances, F. Faili, D. J. Twitchen, and M. Kuball, “GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity”, Appl. Phys. Lett. 107(25), 251902 (2015). T. Brazzini, M. A. Cabson, H. Sun, M. J. Uren, J. Lees, P. Tasker, H. Jung, H. Blanckand, and M. Kuball, “Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence”, Microelectr. Reliab. 55(12), 2493 (2015). T. Brazzini, M. A. Cabson, H. Sun, M. J. Uren, J. Lees, P. Tasker, H. Jung, H. Blanckand, and M. Kuball, “Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation”, Appl. Phys. Lett. 106(21), 213502 (2015). H. Sun*, R. B. Simon, J. W. Pomeroy, D. Francis, F. Faili, D. Twitchen, and M. Kuball, “Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications”, Appl. Phys. Lett. 106(11), 111906 (2015). （被编辑选中为亮点文章） H. Sun*, M. Montes Bajo, M. J. Uren, and M. Kuball, “Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence”, Appl. Phys. Lett. 106(4), 043505 (2015). H. Sun*, M. Montes Bajo, M. J. Uren, and M. Kuball, “Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation”, Microelectr. Reliab. 54(12), 2650 (2014). J. W. Pomeroy, R. B. Simon, H. Sun, D. Francis, F. Faili, D. Twitchen, and M. Kuball, “Contactless thermal boundary resistance measurement of GaN-on-diamond wafers”, IEEE Electron Dev. Lett. 35(10), 1007 (2014). M. Montes Bajo, H. Sun, M. J. Uren, and M. Kuball, “Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors”, Appl. Phys. Lett. 104(22), 223506 (2014). H. Sun, V. A. Stoica, M. Shtein, R. Clarke, and K. P. Pipe, “Coherent control of GHz resonant modes by an integrated acoustic etalon”, Phys. Rev. Lett. 110(8), 086109 (2013). H. Sun and K. P. Pipe, “Perturbation analysis of acoustic wave scattering at rough solid-solid interfaces”, J. Appl. Phys. 111(2), 023510 (2012). Y. Li, V. A. Stoica, L. Endicott, G. Wang, H. Sun, K. P. Pipe, C. Uher, and R. Clarke, “Femtosecond laser-induced nanostructure formation in Sb2Te3”, Appl. Phys. Lett. 99(12), 121903 (2011). Y. Jin, A. Yadav, K. Sun, H. Sun, K. P. Pipe, and M. Shtein, “Thermal boundary resistance of copper phthalocyanine-metal interface”, Appl. Phys. Lett. 98(9), 093305 (2011). 会议论文 J. Anaya, H. Sun, J. W. Pomeroy, and M. Kuball, “Thermal management of GaN-on-Diamond high electron mobility transistors: Effect of the nanostructure in the diamond near nucleation region”, in Proceedings of IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), pp. 1558-1565, Las Vegas, NV, USA, June 2016. H. Sun, D. Liu, J. W. Pomeroy, D. Francis, F. Faili, D. Twitchen, and M. Kuball, “GaN-on-diamond: Robust mechanical and thermal properties”, in Proceedings of Compound Semiconductor Manufacturing Technology (CS MANTECH), pp. 201-203, Miami, FL, USA, May 2016. M. Kuball, J. W. Pomeroy, J. Anaya, H. Sun, R. B. Simon, D. Francis, F. Faili, D. J. Twitchen, S, Rossi, M. Alomari, E. Kohn, L. Tóth and B. Pécz, “Novel thermal management of GaN electronics - diamond substrates” (invited), Proceedings of the ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems and ASME 2015 12th International Conference on Nanochannels, Microchannels, and Minichannels (InterPACKICNMM), no. IPACK2015-48145, p. V003T08A001, San Francisco, CA, USA, July 2015. H. Sun, J. W. Pomeroy, R. B. Simon, D. Francis, F. Faili, D. J. Twitchen, and M. Kuball, “Rapid characterization of GaN-on-diamond interfacial thermal resistance using contactless transient thermoreflectance”, Proceedings of Compound Semiconductor Manufacturing Technology (CS MANTECH), pp. 151-153, Scottsdale, AZ, USA, May 2015. T. Brazzini, M. A. Cabson, H. Sun, M. J. Uren, J. Lees, P. Tasker, H. Jung, H. Blanckand, and M. Kuball, “Hot electrons in AlGaN/GaN HEMTs: DC versus RF reliability”, Reliability of Compound Semiconductors Workshop (ROCS) Proc., pp. 65-68, Scottsdale, AZ, USA, May 2015. H. Sun, M. Montes Bajo, M. J. Uren, and M. Kuball, “OFF-state degradation of AlGaN/GaN HEMTs: Saturation of defect generation and impact of temperature”, Reliability of Compound Semiconductors Workshop (ROCS) Proc., pp. 45-48, Denver, CO, USA, May 2014. Y. Li, V. A. Stoica, L. Endicott, G. Wang, H. Sun, K. P. Pipe, C. Uher, and R. Clarke, “Ultrafast-laser modification of thermoelectric Sb2Te3 thin films”, Mat. Res. Soc. Symp. Proc., vol. 1456, pp. 177-182, January 2012.

学术兼职

2013-今 Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Device Letters等期刊审稿人