近期论文
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2020年：
1.Demonstrationofa2kVAl0.85Ga0.15NSchottkyBarrierDiodewithImprovedOn-currentandIdealityFactor
YanniZhang,JinchengZhang*,ZhihongLiu,ShengruiXu,KaiCheng,JingNing,ChunfuZhang,LeiZhang,PeijunMa,HongZhou*,andYueHao
IEEEElectronDeviceLetters,vol.41,no.3,pp.457-460,2020.
2.Normally-offβ-Ga2O3PowerMOSFETwithFerroelectricChargeStorageGateStackStructure
ZhaoqingFeng,XushengTian,ZheLi,ZhuangzhuangHu,YanniZhang,XuanwuKang,JingNing,YachaoZhang,ChunfuZhang,QianFeng*,HongZhou*,JinchengZhang*,andYueHao
IEEEElectronDeviceLetters,vol.41,no.3,pp.333-336,2020.
3.BeveledFluoridePlasmaTreatmentforVerticalβ-Ga2O3SchottkyBarrierDiodeWithHighReverseBlockingVoltageandLowTurn-OnVoltage
ZhuangzhuangHu,YuanjieLv,ChunyongZhao,QianFeng,ZhaoqingFeng,KuiDang,XushengTian,YachaoZhang,JingNing,HongZhou,XuanwuKang,JinchengZhang,andYueHao
IEEEElectronDeviceLetters,vol.41,no.3,pp.441-444,2020.
4.Lateralβ-Ga2O3MOSFETswithHighPowerFigureofMeritof277MW/cm2
YuanjieLv,HongyuLiu,XingyeZhou,YuangangWang,XuboSong,YuncongCai,QinglongYan,ChenluWang,ShixiongLiang,JinchengZhang,ZhihongFeng,HongZhou*,ShujunCai*,andYueHao
IEEEElectronDeviceLetters,vol.41,no.4,pp.537-540,2020.
5.LeakageCurrentMechanismsofGroove-TypeTungsten-AnodeGaNSBDswithUltraLowTurn-ONVoltageandLowReverseCurrent
YanniZhang，JinchengZhang*,HongZhou*,TaoZhang,HaiyongWang,ZhaoqingFeng,andYueHao
SolidStateElectronics,vol.169,pp.1-7,2020
2019年：
1.High-Voltageβ-Ga2O3SchottkyDiodewithArgon-ImplantedEdgeTermination
YangyangGao,AngLi,QianFeng*,ZhuangzhuangHu,ZhaoqingFeng,KeZhang,XiaoliLu,ChunfuZhang,HongZhou,WenxiangMu,ZhitaiJia,JinchengZhang*,YueHao
Nanoscaleresearchletters，vol.14,no.1,pp.8,2019.
2.ExperimentalandTheoreticalStudiesofMo/AuSchottkyContactonMechanicallyExfoliatedβ-Ga2O3ThinFilm
ZhuangzhuangHu,QianFeng*,ZhaoqingFeng,YuncongCai,YixianShen,GuangshuoYan,XiaoliLu,ChunfuZhang,HongZhou,JinchengZhang*,YueHao
Nanoscaleresearchletters，vol.14,no.1,pp.7,2019.
3.Areviewofthemostrecentprogressesofstate-of-artgalliumoxidepowerdevices(InvitedReview)
HongZhou,JinchengZhang*,ChunfuZhang,QianFeng,ShengleiZhao,PeijunMa,YueHao
JournalofSemiconductors,pp.1-18,2019.
4.HighperformanceLateralGaNSchottkyBarrierDiodeonSiliconSubstratewithLowTurn-onVoltageof0.31V,HighBreakdownVoltageof2.65kVandHighPowerFigure-of-Meritof2.65GW/cm2
TaoZhang,JinchengZhang*,HongZhou*,YachaoZhang,TangshengChen,KaiZhang,YiWang,KuiDang,ZhaokeBian,XiaolingDuan,JingNing,ShengleiZhao,andYueHao
AppliedPhysicsExpress,Vol.12,pp.046502,2019.
5.A>3kV/2.94mΩ•cm2andLowLeakageCurrentwithLowTurn-onVoltageLateralGaNSchottkyBarrierDiodeonSiliconSubstratewithAnodeEngineeringTechnique
TaoZhang,JinchengZhang*,HongZhou*,YiWang,TangshengChen,KaiZhang,YachaoZhang,KuiDang,ZhaokeBian,JinfengZhang,ShengruiXu,XiaolingDuan,JingNing,andYueHao
IEEEElectronDeviceLetters,Vol.40,no.10,pp.1583-1586,2019.
6.LateralGaNSchottkyBarrierDiodeforWirelessHigh-powerTransferApplicationwithHighRF/DCConversionEfficiency:FromCircuitConstructionandDeviceTechnologiestoSystemDemonstration
KuiDang,JinchengZhang*,HongZhou*,ShanYing,TaoZhang,JingNing,YachaoZhang,ZhaokeBian,JiaboChen,XiaolingDuan,ShengleiZhao,YueHao
IEEETransactiononIndustrialElectronics,Vol.xx,pp.xx,2019.
7.A5.8GHzHigh-powerandHigh-efficiencyRectifierCircuitwithLateralGaNSchottkyDiodeforWirelessPowerTransfer
KuiDang,JinchengZhang*,HongZhou*,SenHuang,TaoZhang,ZhaokeBian,YachaoZhang,XinhuaWang,ShengleiZhao,KeWei,andYueHao
IEEETransactiononPowerElectronics(Letter),Vol.35,no.3,2019.
8.High-PerformanceVerticalβ-Ga2O3SchottkyBarrierDiodewithImplantedEdgeTermination
HongZhou,QinglongYan,JinchengZhang*,YuanjieLv,ZhihongLiu,YanniZhang,KuiDang,PengfeiDong,ZhaoqingFeng,QianFeng,JingNing,ChunfuZhang,PeijunMaandYueHao
IEEEElectronDeviceLetters,Vol.40,no.11,pp.1788-1791,2019.
9.A800Vβ-Ga2O3Metal-Oxide-SemiconductorField-EffectTransistorwithHigh-PowerFigureofMeritofOver86.3MW/cm2
Z.Feng,Y.Cai,G.Yan,Z.Hu,K.Dang,Y.Zhang,Z.Lu,H.Cheng,X.Lian,Y.Xu,C.Zhang,Q.Feng*,H.Zhou*,J.Zhang*andY.Hao
Phys.StatusSolidiA-Appl.Mat.,vol.216,pp.1900421-1-1900421-6,2019.
2018年：
1.InvestigationoftemperaturedependentelectricalcharacteristicsonAu/Ni/β-Ga2O3Schottkydiodes
AngLi,QianFeng,JinchengZhang,ZhuangzhuangHu,ZhaoqingFeng,KeZhang,ChunfuZhang,HongZhou,andYueHao
SuperlatticesandMicrostructures,vol.119,pp.212-217,2018.
2.High-performancequasi-verticalGaNSchottkydiodewithlowturn-onvoltage
Zhao-KeBian,HongZhou,Sheng-RuiXu,TaoZhang,KuiDang,Jia-BoChen,Jin-ChengZhang,YueHao
SuperlatticesandMicrostructures,vol.125,pp.295-301,2018.
3.IntegrationandElectricalPropertiesofFerroelectricHf0.5Zr0.5O2ThinFilmonBulk-Ga2O3(−201)SubstrateforMemoryApplications
WenwuXiao,YuePeng,ShuaizhiZheng,QianFeng,HongZhou,ChunfuZhang,JinchengZhang,YueHao,MinLiao,YichunZhou
IEEEElectronDeviceLetters,vol.39,no.10,pp.1504-1507,2018.
4.Tin-assistedgrowthofε-Ga2O3filmandthefabricationofphotodetectorsonsapphiresubstratebyPLD
YuncongCai,KeZhang,QianFeng,YanZuo,ZhuangzhuangHu,ZhaoqingFeng,HongZhou,XiaoliLu,ChunfuZhang,WeihuaTang,JinchengZhang,YueHao
OpticalMaterialsExpress,vol.8,no.11,pp.3506-3517,2018.
5.Field-PlatedLateralβ-Ga2O3SchottkyBarrierDiodewithHighReverseBlockingVoltageofMoreThan3kVandHighDCPowerFigure-of-Meritof500MW/cm2
ZhuangzhuangHu,HongZhou*,QianFeng*,JinchengZhang*,ChunfuZhang,KuiDang,YuncongCai,ZhaoqingFeng,YangyangGaO,XuanwuKang,andYueHao
IEEEElectronDeviceLetters,vol.39,no.11,pp.1564-1567,2018.
6.A1.9kV/2.61mΩ·cm2LateralGaNSchottkyBarrierDiodeonSiliconSubstratewithTungstenAnodeandLowTurn-OnVoltageof0.35V
TaoZhang,JinchengZhang*,HongZhou*,TangshengChen,KaiZhang,ZhuangzhuangHu,ZhaokeBian,KuiDang,YiWang,LiZhang,JingNing,PeijunMa,YueHao
IEEEElectronDeviceLetters,vol.39,no.10,pp.1548-1551,2018.
7.Lateralβ-Ga2O3SchottkyBarrierDiodeonSapphireSubstrateWithReverseBlockingVoltageof1.7kV
ZhuangzhuangHu,HongZhou*,KuiDang,YuncongCai,ZhaoqingFeng,QianFeng,JinchengZhang*,YueHao,IEEEJournaloftheElectronDevicesSociety,vol.6,pp.815-820,2018.
8.AlGaN-ChannelGateInjectionTransistoronSiliconSubstratewithAdjustable4Vto7VThresholdVoltageand1.3kVBreakdownVoltage
LiZhang,HongZhou*,WeihangZhang,KuiDang,Taozhang,PeijunMa,XiaohuaMa,JinchengZhang*,andYueHao，IEEEElectronDeviceLetters,vol.39,no.7,pp.1026-1029,2018.
加入西电前：
Journals:
(1)HongZhou,KerryMaize,JinhyunNoh,AliShakouri,andPeideD.Ye,“Thermo-dynamicStudiesofβ-Ga2O3Nano-membraneField-effectTransistorsonDifferentSubstrates”,ACSOmega,vol.2,pp.7723-7729,2017.
(2)HongZhou,XiabingLou,KartnnSutherlin,JarrenSummers,KelsonD.Chabak,RoyG.GordonandPeideD.Ye,“DCandRFperformanceofAlGaN/GaNMOSHEMTswithdeepsub-micronT-gatesandatomiclayerepitaxyMgCaOasgatedielectric”,IEEEElectronDeviceLetters,vol.38,pp.1294-1297,2017.
(3)HongZhou,XiabingLou,SangBokKim,KelsonD.Chabak,RoyG.GordonandPeideD.Ye,“Enhancement-ModeAlGaN/GaNfin-MOSHEMTsonSiSubstratewithAtomicLayerEpitaxyMgCaO”,IEEEElectronDeviceLetters,vol.38,pp.1294-1297,2017.
(4)HongZhou,KerryMaize,GangQiu,AliShakouri,andPeideD.Ye,“β-Ga2O3onInsulatorField-effectTransistorswithDrainCurrentsExceeding1.5A/mmandTheirSelf-heatingEffect”,AppliedPhysicsLetters,vol.111,pp.092102-1-092102-4,2017.
(5)HongZhou,MengweiSi,SamiAlghamdi,GangQiu,LingmingYang,andPeideD.Ye,“HighPerformanceDepletion/Enhancement-Modeβ-Ga2O3onInsulator(GOOI)Field-effectTransistorswithRecordDrainCurrentsof600/450mA/mm”,IEEEElectronDeviceLetters,vol.38,pp.103-105,2017.
(6)HongZhou,SamiAlghamdi,MengweiSi,GangQiu,andPeideD.Ye,“Al2O3/(-201)β-Ga2O3InterfaceImprovementthroughPiranhaPretreatmentandPostDepositionAnnealing”,IEEEElectronDeviceLetters,vol.37,pp.1411-1414,Oct.2016.
(7)HongZhou,XiabingLou,NathanJ.Conrad,MengweiSi,HengWu,SamiAlghamdi,ShipingGuo,RoyG.Gordon,PeideD.Ye,“High-PerformanceInAlN/GaNMOSHEMTsEnabledbyAtomicLayerEpitaxyMgCaOasGateDielectric”,IEEEElectronDeviceLetters,vol.37,no.5,pp.556-559,May2016.
(8)HongZhou,YuchenDu,andPeideD.Ye,“IonicliquidgatingonatomiclayerdepositionpassivatedGaN:Ultra-highelectrondensityinducedhighdraincurrentandlowcontactresistance”,AppliedPhysicsLetters,vol.108,pp.202102-1-202102-5,May2016.
(9)HongZhou,GeokIngNg,ZhiHongLiu,andSubranmaniamArulkumaran,“Side-gateeffectsonthedirectcurrentandradiofrequencycharacteristicsofAlGaN/GaNhigh-electron-mobilitytransistoronsilicon”,AppliedPhysicsLetters,vol.99,pp.163505-1-163505-3,Oct.2011.
(10)HongZhou,GeokIngNg,ZhiHongLiu,andSubranmaniamArulkumaran,“ImprovedDevicePerformancebyPost-OxideAnnealinginALDAl2O3/AlGaN/GaNMetal-Insulator-SemiconductorHighElectronMobilityTransistoronSi”,AppliedPhysicsExpress,vol.4,pp.104102-1-104102-3,Sep.2011.
(11)HongZhou,MengweiSi,JinhyunNoh,KerryMaize,S.B.Kim,RoyGordon,AliShakouri,PeideD.Ye,“HystersisFreeNegativeCapacitanceHf0.5Zr0.5O2/Mg0.25Ca0.75O/AlGaN/GaNMOSHEMTsonSiSubstratewithDual-SweepSubthresholdSwing<60mV/dec”,IEEEElectronDeviceLetters,2017.(Submitted)
(12)Sung-JaeChang,HongZhou,NanboGong,DongminKang,JongwonLim,MengweiSi,PeideD.Ye,T.P.Ma,“Fin-widthEffectsonCharacteristicsofInGaAs-BasedVerticalIndependentDouble-GateTransistor”,IEEEElectronDeviceLetters,vol.38,pp.441-444,2017.
(13)M.Si,C.J.Su,C.Jiang,N.J.Conrad,H.Zhou,K.D.Maize,G.Qiu,C.T.Wu,A.Shakouri,P.D.Ye,“SteepSlopeMoS22DTransistors:NegativeCapacitanceandNegativeDifferentialResistance”,NatureNanotechnology,vol.13,no.1,pp.24-30,2018..
(14)MengweiSi,LingmingYang,HongZhou,PeideD.Ye,“β-Ga2O3Nano-membraneNegativeCapacitanceField-effectTransistorwithSteepSubthresholdSlopeforWideBandgapLogicApplications”,ACSOmega,vol.2,pp.7136-7140,2017.
(15)Jing-KaiQin,GangQiu,JieJian,HongZhou,Ling-MingYang,Cheng-YanXu,Hai-YanWang,andPeideD.Ye,“ControlledGrowthofLarge-Size2DSeleneneandItsElectronicandOptoelectronicApplications”,ACSNano,vol.11,pp.10222-10229,2017.
(16)MarufA.Bhuiyan,HongZhou,S.J.Chang,XiabingLou,XianGong,RongJiang,HuiqiGong,EnXiaZhang,C.H.Won,J.W.Lim,J.H.Lee,RoyG.Gordon,RobertA.Reed,D.M.Fleetwood,PeideYe,andT.P.Ma,“TotalIonizingDoseResponsesofGaN-basedHEMTswithDifferentChannelThicknessesandMOSHEMTswithEpitaxialMgCaOasGateDielectric”,IEEETransactionsonNuclearScience,vol.65,No.1,46-52,2018.
(17)XiabingLou,HongZhou,SangBokKim,SamiAlghamdi,XianGong,JunFeng,PeideD.Ye,RoyG.Gordon,“EpitaxialGrowthofMgCaOonGaNbyAtomicLayerDeposition”,NanoLetters,vol.16,pp.7650-7654,2016.
(18)GangQiu,YuchenDu,AdamCharnas,HongZhou,ShengyuJin,ZheLuo,DmitryZemlyanov,XianfanXu,GaryCheng,PeideD.Ye,“ObservationofOpticalandElectricalIn-planeAnisotropyinHigh-mobilityFew-layerZrTe5”,NanoLetters,vol.16,pp.7364-7369,2016.
(19)YuchenDu,AdamT.Neal,HongZhouandPeideD.Ye,“WeakLocalizationinFew-LayerBlackPhosphorus”,2DMaterials,vol.3,pp.024003,Mar.2016.
(20)YuchenDu,LingmingYang,HongZhouandPeideD.Ye,“PerformanceEnhancementofBlackPhosphorusField-EffectTransistorsbyChemicalDoping”,IEEEElectronDeviceLetters,vol.37,pp.429-432,Mar.2016.
(21)YuchenDu,AdamT.Neal,HongZhouandPeideD.Ye,“Transportstudiesin2Dtransitionmetaldichalcogenidesandblackphosphorus”,J.ofPhysics:CondensedMatter,vol.28,pp.263002,May2016.
(22)ZhihongLiu,GeokIngNg,HongZhou,SubranmaniamArulkumaran,“ReducedsurfaceleakagecurrentandtrappingeffectsinAlGaN/GaNhighelectronmobilitytransistorsonsiliconwithSiN/Al2O3passivation”,AppliedPhysicsLetters,vol.98,pp.113506-1-113506-3,Oct.2011.
(23)ZhihongLiu,GeokIngNg,SubranmaniamArulkumaran,YrikleterraManung,HongZhou,“Temperature-dependentforwardgatecurrenttransportinALDAl2O3/AlGaN/GaNmetal-insulator-semiconductorhighelectronmobilitytransistor”,AppliedPhysicsLetters,vol.98,pp.163105-1-163105-3,April2011.
(24)DaewoongKwon,KorokChatterjee,AvaJTan,AjayKYadav,HongZhou,AngadaBSachid,RobertoDosReis,ChenmingHu,SayeefSalahuddin,“ImprovedSubthresholdSwingandShortChannelEffectinFDSOIn-ChannelNegativeCapacitanceFieldEffectTransistors”,IEEEElectronDeviceLetters,vol.39,no.2,pp.300-303,Jan.2018.
Conferences:
(1)HongZhou,DaewoongKwon,AngadaB.Sachid,YuhungLiao,KorokChatterjee,AvaJ.Tan,AjayK.Yadav,ChenmingHu,andSayeefSalahuddin,"NegativeCapacitance,n-Channel,SiFinFETs:Bi-directionalSub-60mV/dec,NegativeDIBL,NegativeDifferentialResistanceandImprovedShortChannelEffect",VLSITechnology,2018Symposiumon,June,2018.(Accepted)OralPresentation.
(2)HongZhou,KerryMaize,JinhyunNoh,AliShakouri,PeideD.Ye,“HighPerformanceNano-membraneβ-Ga2O3Field-effectTransistorsonSapphireSubstratewithReducedSelf-heatingEffect”,223rdECSmeeting,May2018.InvitedTalk.
(3)HongZhou,PeideYe,“Depletion/Enhancement-modeβ-Ga2O3onInsulatorField-effectTransistorswithDrainCurrentsExceeding1.5/1A/mmandthemechanismofformingEnhancementmodedevices”,48thIEEESemiconductorInterfaceSpecialists,Conference(SISC),2017,OralPresentation.
(4)HongZhouKerryMaize,JinhyunNoh,andPeideD.Ye,“MinimizedSelf-heatingEffectofβ-Ga2O3Nano-membraneField-effectTransistorsonSapphireSubstrate”,2ndInternationalWorkshoponGalliumOxide(IWGO),2017,OralPresentation.
(5)HongZhouandPeideD.Ye,“Depletion/Enhancement-modeβ-Ga2O3onInsulatorField-effectTransistorswithDrainCurrentsExceeding1.5/1A/mm”,75thDeviceResearchConference(DRC),2017.
(6)HongZhou,MengweiSi,SamiAlghamdi,GangQiu,LingmingYang,andPeideD.Ye,“Highperformancedepletion/enhancement-modeβ-Ga2O3oninsulator(GOOI)field-effect-transistor(FET)withrecorddraincurrentof600/450mA/mm”,47thIEEESemiconductorInterfaceSpecialists,Conference(SISC),2016,(Latenews)OralPresentation.
(7)HongZhouXiabingLou,KartnnSutherlin,JarrenSummers,SangBokKim,KelsonD.Chabak,RoyG.GordonandPeideD.Ye,“DCandRFcharacterizationsofAlGaN/GaNMOSHEMTswithdeepsub-micronT-gatesandatomiclayerepitaxyMgCaOasgatedielectric”,74thDeviceResearchConference(DRC),2016,1-2,OralPresentation.
(8)HongZhou,,XiabingLou,KartnnSutherlin,KelsonD.Chabak,RoyG.GordonandPeideD.Ye,“AlGaN/GaNMOSHEMTwithPOUT=4.18W/mmatf=35GHzEnabledbyAtomicLayerEpitaxyMgCaODielectric”,InternationalWorkshoponNitrideSemiconductors(IWN),2016,OralPresentation.
(9)H.Zhou,S.Alghmadi,M.Si,andP.D.Ye,“DeterminationofAl2O3/β-Ga2O3InterfaceTrapDensitiesDitThroughPhoto-AssistedC-VMethod”,2016LesterEastmanConference(LEC)onHighPerformanceDevices,2016.
(10)HongZhouXiabingLou,HengWu,SamiAlghamdi,ShipingGuo,RoyG.Gordon,PeideD.Ye,“InAlN/GaNMOSHEMTswithhighdraincurrentof2.3A/mmhighon/offratioof1012andlowSSof64mV/decenabledbyatomic-layer-epitaxialMgCaOasgatedielectric”,73thDeviceResearchConference(DRC),2015,57-58,OralPresentation.
(11)HongZhou,XiabingLou,KelsonD.Chabak,R.G.Gordon,andPeideD.Ye,“AlGaN/GaNMOSHEMTsonSi(111)SubstratewithHighon/offRatioLowSSandHighOff-stateBreakdownVoltageEnabledbyALESingleCrystallineMgCaOGateDielectric”,46thIEEESemiconductorInterfaceSpecialists,Conference(SISC),2015,OralPresentation.
(12)HongZhouandPeideD.Ye,“AchievingofUltraHighElectronDensityonGaNSurfacebyIonicLiquidGating”,45thIEEESemiconductorInterfaceSpecialists,Conference(SISC),2014.
(13)HongZhou,NathanJ.Conrad,ShipingGuo,andPeideD.Ye,“DemonstrationofInAlN/GaNMetal-Insulator-SemiconductorHigh-Electron-Mobility-TransistorswithALDLa1.8Y0.2O3/Al2O3asGateInsulator”,44thIEEESemiconductorInterfaceSpecialists,Conference(SISC),2013.
(14)KerryMaize,HongZhou,PeideD.Ye,andAliShakouri,“Highresolutionthermalimagingofpre-breakdowninpowerAlGaN/GaNMOSHEMTs”,ReliabilityPhysicsSymposium(IRPS),2017International,5C-3.1-5C-3.7.
(15)M.Bhuiyan,H.Zhou,X.Lou,R.Jiang,X.Gong,H.Gong,E.X.Zhang,R.G.Gordon,R.A.Reed,D.M.Fleetwood,P.YeandT.P.Ma,“TotalionizingdosestudyofGaNbasedHEMTsandMOSHEMTs:effectsofchannelthicknessandepitaxialMgCaOasgatedielectric”,IEEENuclearandSpaceRadiationEffectsConference(NSREC),2017.
(16)LMYang,GQiu,MWSi,ARCharnas,CAMilligan,DYZemlyanov,HZhou,YCDu,YMLin,WTsai,QingPaduano,MSnure,PDYe,“Few-layerblackphosporousPMOSFETswithBN/Al2O3bil[ant]ayergatedielectric:AchievingIon=850μA/μm,gm=340μS/μm,andRc=0.58kΩ•μm”,ElectronDevicesMeeting(IEDM),2016IEEEInternational,5.5.1-5.5.4.
(17)M.Bhuiyan,X.Lou,X.Gong,H.Zhou,K.Ni,R.Jiang,H.Gong,E.X.Zhang,R.G.Gordon,R.A.Reed,D.M.Fleetwood,P.YeandT.P.Ma,“RadiationinducedchargetrappingincrystallineLa2O3gatedielectricgrownonGaAs”,47thIEEESemiconductorInterfaceSpecialists,Conference(SISC),2016.
(18)M.Bhuiyan,H.Zhou,S.-J.Chang,X.Lou,X.Gong,K.Ni,R.Jian,H.Gong,E.X.Zhang,C.-H.Won,R.G.Gordon,J.-W.Lim,J.-H.Lee,R.A.Reed,D.M.Fleetwood,P.YeandT.P.Ma,“TotalionizingdoseeffectsonGaN-basedHEMTsandMOSHEMTs:EffectsofchannelthicknessandcrystallineMgCaOasgatedielectric”,47thIEEESemiconductorInterfaceSpecialists,Conference(SISC),2016.
(19)SamiAlghamdi,HongZhou,MengweiSi,andPeideD.Ye,“ComparativestudyoftheAl2O3/β-(-201)Ga2O3andAl2O3/β-(010)Ga2O3interfacesthroughphoto-assistedC-Vmeasurements”,47thIEEESemiconductorInterfaceSpecialists,Conference(SISC),2016.
(20)HengWu,WeiLuo,HongZhou,MengweiSi,JinyunZhang,PeideD.Ye,“FirstexperimentaldemonstrationofGe3DFinFETCMOScircuits”,inVLSISymp.Tech.Dig.,Jun.2015,T58-T59.
(21)HengWu,MengweiSi,HongZhou,PeideD.Ye,“Deepsub-100nmGeCMOSdevicesonSiwiththerecessedS/Dandchannel”,ElectronDevicesMeeting(IEDM),2014IEEEInternational,16.7.1-16.7.4.
(22)AdamNeal,HongZhou,YuchenDu,PeideD.Ye,“SuperconductivityinQuasi-2DElectronSystemwithUltra-highElectronDensity”,APSMarchMeetingAbstracts,52009.
(23)YuchenDu,AdamNeal,HongZhou,PeideD.Ye,“WeakLocalizationinBulkBlackPhosphorusandFew-LayerPhosphorene”,APSMarchMeetingAbstracts,L1002.
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