近期论文
查看导师最新文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
代表性论文成果：
2017:
[1]YangLi,Lin-AnYang,HaoZou,Heng-ShuangZhang,Xiao-HuaMa,andYueHao,SubstrateIntegratedWaveguideStructuralTransmissionLineandFilteronSiliconCarbideSubstrate,IEEEElectronDeviceLetters,38(9),1290-1293,2017;
[2]YangLi,Lin-AnYang,LinDu,KunzheZhang,andYueHao,DesignofMillimeter-WaveResonantCavityandFilterUsing3-DSubstrate-IntegratedCircularWaveguide,IEEEMicrowaveandWirelessComponentsLetters,27(8),706-708,2017;
[3]YangLi,Lin-AnYang,Shao-boWang,LinDu,andYueHao,Designof3Dfilteringantennafortheapplicationofterahertz,ElectronicsLetters,53(1),7-8,2017;
2015-2016：
[1]YangDai,Lin'anYang,ShengruiXuandYueHao,AnisotropyEffectsOnThePerformanceOfWurtziteGaNIMPATTDiodes,AppliedPhysicsExpress,9(10),111004,2016;
[2]Lin'anYang,YueLi,YingWang,ShengruiXu,andYueHao,Asymmetricquantum-wellstructuresforAlGaN/GaN/AlGaNresonanttunnelingdiodes,JournalofAppliedPhysics,119(16),164501,2016;
[3]QingChen,Lin'anYang,ShulongWang,andYueHao,EffectoftemperatureonavalancheregionwidthandDCtoRFconversionefficiencyofthep+nn2n+4H–SiCimpactavalanchetransittimediodes,AppliedPhysicsA,Vol.122,No.6,pp.536-1-7,2016;
[4]YingWang,Lin'anYang,ZhizheWang,JinpingAo,andYueHao,Themodulationofmulti-domainandharmonicwaveinaGaNplanarGunndiodebyrecessla[ant]yer,SemiconductorScienceandTechnology,31(2),025001,2016;
[5]YingWang,Lin-AnYang,Zhi-ZheWang,Jin-PingAo,andYueHao,TheenhancementoftheoutputcharacteristicsintheGaNbasedmultiple-channelplanarGunndiode,PhysicaStatusSolidi(a),213(5),pp.1252-1258,2016;
[6]YangDai,Lin'anYang,QingChen,YingWang,andYueHao,EnhancementoftheperformanceofGaNIMPATTdiodesbynegativedifferentialmobility,AIPAdvances,6(5),055301,2016;
[7]YingWang,Lin-AnYang,Zhi-ZheWang,andYueHao,ModulationofthedomainmodeinGaN-basedplanarGunndiodeforterahertzapplications,PhysicaStatusSolidi(c),13(5-6),pp.382-385,2016;
[8]QingChen,Lin’anYang,ShulongWang,YueZhang,YangDai,YueHao,InfluenceoftheanisotropyontheperformanceofD-bandSiCIMPATTdiodes.AppliedPhysicsA,Vol.118,No.4,pp.1219-1227,2015;
2014年：
[1]YingWang,Lin'anYang,ZhizheWang,QingChen,YonghongHuang,YangDai,HaoranChen,HongliangZhao,andYueHao,Ultra-shortchannelGaNhighelectronmobilitytransistor-likeGunndiodewithcompositecontact.JournalofAppliedPhysics,116(9),094502,2014;
[2]HaoranChen,Lin'anYang,andYueHao,InfluenceofInGaNsub-quantum-wellonperformanceofInAlN/GaN/InAlNresonanttunnelingdiodes.JournalofAppliedPhysics,116(7),074510,2014;
[3]LiangLi,Lin'anYang*,RongtaoCao,ShengRuiXu,XiaoweiZhou,JunshuaiXue,ZhiyuLin,WeiHa,JinchengZhang,YueHao,ReductionofthreadingdislocationsinN-polarGaNusingapseudomorphicallygrowngraded–Al-fractionAlGaNinterla[ant]yer.JournalofCrystalGrowth,387(1),pp.1-5,2014;
[4]LiLiang,YangLin-An,XueJun-Shuai,CaoRong-Tao,XuSheng-Rui,ZhangJin-Cheng,andHaoYue,ImprovedcrystalqualityofGaNfilmwiththein-planelattice-matchedIn0.17Al0.83Ninterla[ant]yergrownonsapphiresubstrateusingpulsedme[ant]talorganicchemicalvapordeposition.ChinesePhysicsB,Vol.23,No.6,pp:067103,2014;
2013年：
[1]YingWang,Lin-AnYang,WeiMao,ShuangLong,andYueHao,Modulationofmulti-domaininAlGaN/GaNHEMT-likedplanarGunndiode.IEEETrans.ElectronDevices,60(5),1600-1606,2013;
[2]HaoranChen,Lin’anYang,ShuangLong,andYueHao,ReproducibilityinthenegativedifferentialresistancecharacteristicofIn0.17Al0.83N/GaNresonanttunnelingdiodes-Theoreticalinvestigation.JournalofAppliedPhysics,113(19),194509,2013;
[3]LiangLi,Lin'anYang,JinchengZhang,andYueHao,DislocationblockingbyAlGaNhotelectroninjectingla[ant]yerintheepitaxialgrowthofGaNterahertzGunndiode,JournalofAppliedPhysics,114(10),104508,2013;
[4]HaoranChen,Lin'anYang,XiaoxianLiu,ZhangmingZhu,JunLuo,andYueHao,TheimpactoftrappingcentersonAlGaN/GaNresonanttunnelingdiode,IEICEElectronicsExpress,Vol.10,No.19,pp:1-6,2013;
[5]L.Li,L.A.Yang,R.T.Cao,S.R.Xu,X.W.Zhou,J.S.Xue,Z.Y.Lin,W.Ha,J.C.Zhang,Y.Hao,ReductionofthreadingdislocationsinN-polarGaNusingapseudomorphicalygrowngraded-Al-fractionAlGaNinterla[ant]yer,JournalofCrystalGrowth387,1–5,2014;
[6]L.Li,L.A.Yang,X.W.Zhou,J.C.Zhang,andY.Hao,Pointdefectdeterminationbyphotoluminescenceandcapacitance–voltagecharacterizationinGaNterahertzGunndiode,ChinesePhysicsB,Vol.22,No.8,pp:087103,2013.
2012年：
[1]Lin’anYang,ShuangLong,XinGuo,andYueHao,Acomparativeinvestigationonsub-micrometreInNandGaNGunndiodesworkingatterahertzfrequency,JournalofAppliedPhysics,111(10),104514,2012;
[2]LiangLi,Lin-AnYang,Jin-ChengZhang,Jun-ShuaiXue,Sheng-RuiXu,LingLv,YueHao,andMu-TongNiu,ThreadingdislocationreductionintransitregionofGaNterahertzGunndiodes.AppliedPhysicsLetters,100(07),072104,2012;
[3]LiangLi,Lin-AnYang,Jin-ChengZhang,Lin-XiaZhang,Li-ShaDang,Qian-WeiKuang,YueHao,PointdefectdeterminationbyeliminatingfrequencydispersioninC–VmeasurementforAlGaN/GaNheterostructure.Solid-StateElectronics,68,98-102,2012;
2011年：
[1]Lin'anYang,HanbingHe,WeiMao,andYueHao,"QuantitativeanalysisofthetrappingeffectonterahertzAlGaN/GaNresonanttunnelingdiode",AppliedPhysicsLetters,Vol,99,No.15,153501,2011;
[2]Lin-AnYang,YueHao,QingyangYao,andJinchengZhang,“ImprovedNegativeDifferentialMobilityModelofGaNandAlGaNforaTerahertzGunnDiode,”IEEETrans.ElectronDevices，Vol.58,No.4,1076-1083,2011；
[3]Lin’anYang,WeiMao,QingyangYao,QiLiu,XuhuZhang,JinchengZhang,andYueHao,“TemperatureeffectonthesubmicronAlGaN/GaNGunndiodesforterahertzfrequency”,JournalofAppliedPhysics,Vol.109,No.2,024503,2011;
京公网安备 11010802027423号