王霄 - 西安电子科技大学

个人简介

个人简介王霄，2012年获得武汉大学物理学院理学学士学位，2014年获得法国里昂一大理学硕士学位，2017年获得武汉大学理学博士学位。2017年7月起加入西安电子科技大学，讲师。在国际刊物发表论文10多篇，参加国家重点研发计划和国家自然科学基金项目多项，参加国际会议多次。科学研究目前研究团队承担的科研项目： 1.国家重点研发计划战略性先进电子材料专项项目，2017YFB0403000，GaN基新型电力电子器件关键技术，2017/07-2020/12，1489万，在研，参加； 2.国家自然科学基金面上项目，11574235，原子层沉积法制备硅基m面ZnO紫外发光二极管及金属纳米颗粒表面等离激元耦合增强发光研究，2016/01-2019/12，87万，在研，参加。科研团队团队教师 1.敖金平教授 2.补钰煜副教授 3.王霄讲师博士研究生张亚萍、徐洋、李阳、王婷婷、何悦、陈治伟、王琳硕士研究生 17级刘辰阳、任梦珂 18级彭韬玮、姜风秋、徐杨、冶琼、陈国强、赵家悦、陈曦 19级贾茂、翟小崎、张赫男、张艺涵、李缓毕业硕士研究生黄倩课程教学目前本人承担的教学任务：《射频电路基础》《概率论与数理统计》招生要求欢迎报考敖金平教授的博士和硕士研究生，

研究领域

1．GaN基电子器件； 2．GaN基光电器件； 3．III-N和ZnO宽禁带半导体材料研究。

近期论文

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T.T.Wang,X.Wang,X.B.Li,J.C.ZhangandJ.P.Ao,“Temperature-DependentCharacteristicsofGaNSchottkyBarrierDiodeswithTiNandNiAnodes,”ChinesePhysicsLetters,vol.36,p.057101,2019. M.J.Zheng,P.B.Gui,X.Wang,G.Z.Zhang,J.X.Wan,H.Zhang,G.J.Fang,H.Wu,Q.Q.Lin,C.Liu,"ZnOultravioletphotodetectorswithanextremelyhighdetectivityandshortresponsetime,"AppliedSurfaceScience,vol.481,p.437,2019. Y.Zhang,Y.Li,D.Ni,Z.Chen,X.Wang,Y.Bu,J.P.Ao,“ImprovementofBiVO4PhotoanodePerformanceDuringWaterPhoto-OxidationUsingRh-DopedSrTiO3PerovskiteasaCo-Catalyst,”AdvancedFunctionalMaterials,p.1902101,2019. L.Bai,J.Wen,Y.Tang,H.Wu,H.Zhang,X.Wang,W.He,R.Sun.“Synergiceffectofgrapheneandcore−shellsstructuredAuNR@SiO2@TiO2indye-sensitizedsolarcells,”Nanotechnology,vol30,p.465401,2019. M.Zheng,Y.Xu,X.Wang,G.Zhang,W.Li,J.Li,L.Zhang,H.Wu,Q.Lin,C.Liu.“ZnO-BasedUltravioletPhotodetectorswithTunableSpectralResponses,”Physicastatussolidi(RRL)-RapidResearchLetters,p.1900441,2019. T.F.Pu,X.B.Li,X.Wang,Y.Y.Bu,L.A.Li,J.P.Ao.“GaNSchottkyBarrierDiodeswithTiNElectrodeforMicrowavePowerTransmission,”MaterialsScienceForum.TransTechPublicationsLtd,vol.954,pp.126-132,2019. X.Wang,L.Bai,H.Zhang,X.Su,H.WuandC.Liu,“Agnanoparticlesurface-plasmon-resonance-enhancedelectroluminescencefromsemipolarn-ZnO/p-GaNheterojunctionlight-emittingdiodes,”AppliedPhysicsExpress,vol.11,p.102101,2018. T.Pu,X.Wang,Q.Huang,T.Zhang,X.Li,L.LiandJ.P.Ao,"Normally-offAlGaN/GaNHeterojunctionMetal-Insulator-SemiconductorField-EffectTransistorsWithGate-FirstProcess,"IEEEElectronDeviceLetters,vol.40,pp.185-188,2018. Y.Zhang,G.Han,H.Wu,X.Wang,Y.Liu,J.Zhang,H.Liu,H.Zheng,X.Chen,C.LiuandY.Hao,“ReducedContactResistanceBetweenMetalandn-GebyInsertionofZnOwithArgonPlasmaTreatment,”NanoscaleResearchLetters,vol.13,p.237,2018. T.Zhang,T.Pu,T.Xie,L.Li,Y.Bu,X.Wang,andJ.P.Ao,"SynthesisofthermallystableHfOxNyasgatedielectricforAlGaN/GaNheterostructurefield-effecttransistors,"ChinesePhysicsB,vol.27,p.78503,2018. X.Wang,W.Wang,J.Wang,H.Wu,andC.Liu,"ExperimentalevidencesforreducingMgactivationenergyinhighAl-contentAlGaNalloybyMgGaδdopingin(AlN)m/(GaN)nsuperlattice,"ScientificReports,vol.7,p.44223,2017. X.Wang,G.Zhang,Y.Xu,H.Wu,andC.Liu,"Selective-AreaGrowthofTransferableInNNanocolumnsbyUsingAnodicAluminumOxideNanotemplates,"NanoscaleResearchLetters,vol.12,p.145,2017. X.Wang,X.Gan,G.Zhang,X.Su,M.Zheng,Z.Ai,H.Wu,andC.Liu,"ThefunctionofanIn0.17Al0.83Ninterlayerinn-ZnO/In0.17Al0.83N/p-GaNheterojunctions,"AppliedSurfaceScience,vol.393,pp.221-224,2017. M.Zheng,G.Zhang,X.Wang,J.Wan,H.Wu,andC.Liu,"EffectsofPost-DepositionAnnealingonZrO2/n-GaNMOSCapacitorswithH2OandO3astheOxidizers.,"NanoscaleResearchLetters,vol.12,p.267,2017. X.Su,G.Zhang,X.Wang,C.Chen,H.Wu,andC.Liu,"Two-stepdepositionofAl-dopedZnOonp-GaNtoformohmiccontacts,"Nanoscaleresearchletters,vol.12,p.469,2017. G.Zhang,H.Wu,X.Wang,D.Zhang,T.Wang,andC.Liu,"ModulationofthedissipationfactorintransparentAlZnO/ZrO2/AlZnOcapacitors,"JournalofAlloysandCompounds,vol.690,pp.777-782,2017. X.Wang,G.Z.Zhang,Y.Xu,X.W.Gan,C.Chen,Z.Wang,Y.Wang,J.L.Wang,T.Wang,H.Wu,andC.Liu,"LeakageCurrentMechanismofInN-BasedMetal-Insulator-SemiconductorStructureswithAl2O3asDielectricLayers,"NanoscaleResearchLetters,vol.11,p.21,2016. G.Zhang,H.Wu,X.Wang,T.Wang,andC.Liu,"TransparentcapacitorswithhybridZnO:AlandAgnanowiresaselectrodes,"Nanotechnology,vol.27,p.105204,2016.