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Editor-in-Chief Dr. M. TahooriKarlsruhe Institute of Technology, Institute of Computer Engineering, Chair of Dependable Nano Computing, Technologiefabrik Haid-und-Neu-Str. 7 Build. 07.21, 3rd floor, D-76131, Karlsruhe, Germany, Fax: +49-721-608-43962 Phone +49-721-608-47778Associate Editors Dr. D. AgonaferUniversity of Texas at Arlington Electronics MEMS & Nanoelectronics Systems Packaging Center, 500 West First St, Rm 211A Woolf Hall, Arlington, Texas, TX 76019, United States, Fax: 817-272-5010 Phone 817-272-7377Dr. D. AlexerdandrescuIroc Technologies SA, Grenoble, FranceDr. L. AnghelTechniques of Informatics and Microelectronics for Integrated Systems Architecture Laboratory, 46, avenue Félix Viallet, 38031, Grenoble, FranceDr. H.A. AsadiSharif University of Technology Department of Computer Engineering, Azadi Ave, Tehran, Iran, Islamic Republic ofDr. A.S. BahmanAalborg University Center of Reliable Power Electronics, Pontoppidanstraede 111, 9220, Aalborg, DenmarkDr. P. CovaUniversity of Parma Department of Civil Environmental Land and Architecture Engineering, 43124, Parma, Italy, Fax: +39 0521 905822 Phone +39 0521 905818Dr. H. GossnerIntel Germany GmbH, Am Campeon 12, 85579, Neubiberg, GermanyDr. P. GromalaRobert Bosch GmbH Automotive Electronics, Postfach 13 42, 72703, Reutlingen, GermanyDr. S. HamdouiDelft University of Technology Department of Materials Science and Engineering, Fac. 3ME, Mekelweg 2, Room 8D-4-07, 2628 CD, Delft, NetherlandsDr. B. HanUniversity of Maryland at College Park Department of Mechanical Engineering, 2181 Glenn L. Martin Hall, Building 088, College Park, Maryland, 20742, United States, Fax: 301-314-9477 Phone 301-405-5255Dr. J. HanUniversity of Alberta Department of Electrical and Computer Engineering, 9107 - 116 Street, Edmonton, T6G 2V4, Alberta, CanadaDr. M. HashimotoOsaka University Graduate School of Information Science and Technology Information Systems Engineering, Toyonaka, Japan Phone +81-6-6879-4520Dr. D. HuitinkUniversity of Arkansas College of Engineering, 204 Mechanical Engineering Bldg, Fayetteville, Arkansas, 72701-4002, United States Phone 479-575-6263Dr. F. IannuzzoAalborg University, Center of Reliable Power Electronics (CORPE), Pontoppidanstraede 101, 9220, Aalborg Ø, Denmark Phone +39 0776 299 3741Dr. P. KuzhirBelarusian State University Institute for Nuclear Problems, Bobruiskaya Str., 11, 220030, Minsk, Belarus Phone +375 29 605 18 35Dr. D. KwonSungkyunkwan University, Department of Systems Management Engineering, 27404B Sungkyunkwan University, Seobu-ro 2066, 16419, Jangan-gu, Suwon, Korea, Republic ofPhone +82-31-290-7593Dr. C.-C. LeeNational Tsing Hua University Department of Power Mechanical Engineering, No. 101, Section 2, Kuang-Fu Road, 30013, Hsinchu, Taiwan Phone +886-3-5162410Dr. E.A. MirandaAutonomous University of Barcelona Electronic Engineering Department, Barcelona, SpainDr. W.H. RobinsonVanderbilt University, PMB 351824, 2301 Vanderbilt Place, Nashville, Tennessee, 37235-1824, United States Phone (615) 322-1507Dr. U. SchlichtmannTechnical University of Munich Department of Electrical and Computer Engineering, Theresienstr. 90, 80333, Munich, Germany Phone +49 (89) 289 - 23665Dr. M. ShrivastavaIndian Institute of Science Department of Electronic Systems Engineering, Bangalore, IndiaDr. C.-M. TanChang Gung University, Dept. of Electronic Engineering, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, TaiwanDr. S.X.-D. TanUniversity of California Riverside Department of Electrical and Computer Engineering, Winston Chung Hall, Riverside, California, CA 92521, United States, Fax: +1 951-827-2425 Phone +1 951-827-5143Dr. E.I. VatajeluTechniques of Informatics and Microelectronics for Integrated Systems Architecture Laboratory, 46, avenue Félix Viallet, 38031, Grenoble, FranceDr. H. WangShanghai Advanced Research Institute, Rm 505, Building 1, 99 Haike Road, 201210, Shanghai, China Phone 8621-20325159Former Editor-in-Chief Founding Editor Editorial Advisory Board M. AmagaiTexas Instruments Japan Ltd Oita, Oita, JapanY.C. ChanCity University of Hong Kong, Kowloon, Hong KongK. CroesInteruniversity Micro-Electronic Centre, Leuven, BelgiumG. De MeyGhent University, Gent, BelgiumS. DimitrijevGriffith University, Nathan, Queensland, AustraliaA. DziedzicWroclaw University of Science and Technology, Wroclaw, PolandD.M. FleetwoodVanderbilt University, Nashville, Tennessee, United StatesD. FloresNational Centre of Microelectronics, Bellaterra, SpainM. FukudaNTT Science and Core Technology Laboratory Group, Atsugi, JapanR. GhaffarianCalifornia Institute of Technology, Pasadena, California, United StatesG. GhibaudoGraduate School of Physics Electronics and Materials, Grenoble, FranceT. GrasserTU Wien University, Wien, AustriaV. HuardSTMicroelectronics, Genève, SwitzerlandD. P. IoannouInternational Business Machines CorpH. IwaiTokyo Institute of Technology - Suzukakedai Campus, Yokohama, JapanN. LabatLaboratory of Material System Integration, Talence Cedex, FranceB. LiIBM Essex Junction, Essex Junction, Vermont, United StatesJ. LiouUniversity of Central Florida, Orlando, Florida, United StatesJ. LutzChemnitz University of Technology, Chemnitz, GermanyI. ManicUniversity of Niš, Nis, SerbiaR. MenozziUniversity of Parma, Parma, ItalyE. MirandaUniversity of Buenos Aires, Buenos Aires, ArgentinaH. MomoseToshiba Corporation Research and Development Center, Isogo-Ku, Yokohama, JapanL.T. NguyenTexas Instruments Inc, Dallas, Texas, United StatesA. Ortiz-CondeSimon Bolivar University, Caracas, Venezuela, Bolivarian Republic ofA. PaskalevaBulgarian Academy of Sciences, Sofiya, BulgariaP. PerduToulouse Space Centre, Toulouse, FranceV.S. PershenkovLomonosov Moscow State University, Moskva, Russian FederationJ. M. Song National Chung Hsing University, Taichung, Taiwan J. StathisIBM Research, Yorktown Heights, New York, United StatesV. SzekelyBudapest University of Technology and Economics, Budapest, HungaryM. VanziUniversity of Cagliari, Cagliari, ItalyG.Q.K. ZhangNXP Semiconductors NV, Eindhoven, NetherlandsM. ZwolinksiUniversity of Southampton, Southampton, United Kingdom
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