当前位置: X-MOL首页最新SCI期刊查询及投稿分析系统 › MICROELECTRONICS RELIABILITY杂志
MICROELECTRONICS RELIABILITY
基本信息
期刊名称 MICROELECTRONICS RELIABILITY
MICROELECTRON RELIAB
期刊ISSN 0026-2714
期刊官方网站 http://www.journals.elsevier.com/microelectronics-reliability/
是否OA
出版商 Elsevier Ltd
出版周期 Monthly
始发年份 1964
年文章数 526
最新影响因子 1.6(2022)  scijournal影响因子  greensci影响因子
中科院SCI期刊分区
大类学科 小类学科 Top 综述
工程技术4区 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气4区
NANOSCIENCE & NANOTECHNOLOGY 纳米科技4区
PHYSICS, APPLIED 物理:应用4区
CiteScore
CiteScore排名 CiteScore SJR SNIP
学科 排名 百分位 1.70 0.376 0.983
Materials Science
Surfaces, Coatings and Films
48 / 116 59%
Engineering
Safety, Risk, Reliability and Quality
54 / 154 64%
Physics and Astronomy
Atomic and Molecular Physics, and Optics
76 / 173 56%
Materials Science
Electronic, Optical and Magnetic Materials
95 / 225 57%
Physics and Astronomy
Condensed Matter Physics
168 / 397 57%
Engineering
Electrical and Electronic Engineering
248 / 661 62%
补充信息
自引率 19.70%
H-index 80
SCI收录状况 Science Citation Index
Science Citation Index Expanded
官方审稿时间
网友分享审稿时间 数据统计中,敬请期待。
PubMed Central (PML) http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0026-2714%5BISSN%5D
投稿指南
期刊投稿网址 http://ees.elsevier.com/mr/
收稿范围

Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devicescircuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.

Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
Additional regular features will include: 
• Special issues devoted to significant international conferences, or to important developing topics 
• Letters to the Editors 
• Industrial news and updates 
• Calendar of forthcoming events 
• Book reviews
Microelectronics Reliability is an indispensable forum for the exchange of knowledge and experience between microelectronics reliability professionals from both academic and industrial environments, and all those associated in any way with a steadily growing microelectronics industry and its many fields of application.

收录体裁
Original research papers, introductory invited and reviews papers, and research notes.
投稿指南 https://www.elsevier.com/journals/microelectronics-reliability/0026-2714/guide-for-authors
投稿模板
参考文献格式 https://www.elsevier.com/journals/microelectronics-reliability/0026-2714/guide-for-authors
编辑信息
Editor-in-Chief

Dr. M. Tahoori

Karlsruhe Institute of Technology, Institute of Computer Engineering, Chair of Dependable Nano Computing, Technologiefabrik Haid-und-Neu-Str. 7 Build. 07.21, 3rd floor, D-76131, Karlsruhe, Germany, Fax: +49-721-608-43962 Phone +49-721-608-47778
Associate Editors

Dr. D. Agonafer

University of Texas at Arlington Electronics MEMS & Nanoelectronics Systems Packaging Center, 500 West First St, Rm 211A Woolf Hall, Arlington, Texas, TX 76019, United States, Fax: 817-272-5010 Phone 817-272-7377

Dr. D. Alexerdandrescu

Iroc Technologies SA, Grenoble, France

Dr. L. Anghel

Techniques of Informatics and Microelectronics for Integrated Systems Architecture Laboratory, 46, avenue Félix Viallet, 38031, Grenoble, France

Dr. H.A. Asadi

Sharif University of Technology Department of Computer Engineering, Azadi Ave, Tehran, Iran, Islamic Republic of

Dr. A.S. Bahman

Aalborg University Center of Reliable Power Electronics, Pontoppidanstraede 111, 9220, Aalborg, Denmark

Dr. P. Cova

University of Parma Department of Civil Environmental Land and Architecture Engineering, 43124, Parma, Italy, Fax: +39 0521 905822 Phone +39 0521 905818

Dr. H. Gossner

Intel Germany GmbH, Am Campeon 12, 85579, Neubiberg, Germany

Dr. P. Gromala

Robert Bosch GmbH Automotive Electronics, Postfach 13 42, 72703, Reutlingen, Germany

Dr. S. Hamdoui

Delft University of Technology Department of Materials Science and Engineering, Fac. 3ME, Mekelweg 2, Room 8D-4-07, 2628 CD, Delft, Netherlands

Dr. B. Han

University of Maryland at College Park Department of Mechanical Engineering, 2181 Glenn L. Martin Hall, Building 088, College Park, Maryland, 20742, United States, Fax: 301-314-9477 Phone 301-405-5255

Dr. J. Han

University of Alberta Department of Electrical and Computer Engineering, 9107 - 116 Street, Edmonton, T6G 2V4, Alberta, Canada

Dr. M. Hashimoto

Osaka University Graduate School of Information Science and Technology Information Systems Engineering, Toyonaka, Japan Phone +81-6-6879-4520

Dr. D. Huitink

University of Arkansas College of Engineering, 204 Mechanical Engineering Bldg, Fayetteville, Arkansas, 72701-4002, United States Phone 479-575-6263

Dr. F. Iannuzzo

Aalborg University, Center of Reliable Power Electronics (CORPE), Pontoppidanstraede 101, 9220, Aalborg Ø, Denmark Phone +39 0776 299 3741

Dr. P. Kuzhir

Belarusian State University Institute for Nuclear Problems, Bobruiskaya Str., 11, 220030, Minsk, Belarus Phone +375 29 605 18 35

Dr. D. Kwon

Sungkyunkwan University, Department of Systems Management Engineering, 27404B Sungkyunkwan University, Seobu-ro 2066, 16419, Jangan-gu, Suwon, Korea, Republic ofPhone +82-31-290-7593

Dr. C.-C. Lee

National Tsing Hua University Department of Power Mechanical Engineering, No. 101, Section 2, Kuang-Fu Road, 30013, Hsinchu, Taiwan Phone +886-3-5162410

Dr. E.A. Miranda

Autonomous University of Barcelona Electronic Engineering Department, Barcelona, Spain

Dr. W.H. Robinson

Vanderbilt University, PMB 351824, 2301 Vanderbilt Place, Nashville, Tennessee, 37235-1824, United States Phone (615) 322-1507

Dr. U. Schlichtmann

Technical University of Munich Department of Electrical and Computer Engineering, Theresienstr. 90, 80333, Munich, Germany Phone +49 (89) 289 - 23665

Dr. M. Shrivastava

Indian Institute of Science Department of Electronic Systems Engineering, Bangalore, India

Dr. C.-M. Tan

Chang Gung University, Dept. of Electronic Engineering, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan

Dr. S.X.-D. Tan

University of California Riverside Department of Electrical and Computer Engineering, Winston Chung Hall, Riverside, California, CA 92521, United States, Fax: +1 951-827-2425 Phone +1 951-827-5143

Dr. E.I. Vatajelu

Techniques of Informatics and Microelectronics for Integrated Systems Architecture Laboratory, 46, avenue Félix Viallet, 38031, Grenoble, France

Dr. H. Wang

Shanghai Advanced Research Institute, Rm 505, Building 1, 99 Haike Road, 201210, Shanghai, China Phone 8621-20325159
Former Editor-in-Chief

N.D. Stojadinovic

Founding Editor

G.W.A. Dummer

Editorial Advisory Board

M. Amagai

Texas Instruments Japan Ltd Oita, Oita, Japan

Y.C. Chan

City University of Hong Kong, Kowloon, Hong Kong

K. Croes

Interuniversity Micro-Electronic Centre, Leuven, Belgium

G. De Mey

Ghent University, Gent, Belgium

S. Dimitrijev

Griffith University, Nathan, Queensland, Australia

A. Dziedzic

Wroclaw University of Science and Technology, Wroclaw, Poland

D.M. Fleetwood

Vanderbilt University, Nashville, Tennessee, United States

D. Flores

National Centre of Microelectronics, Bellaterra, Spain

M. Fukuda

NTT Science and Core Technology Laboratory Group, Atsugi, Japan

R. Ghaffarian

California Institute of Technology, Pasadena, California, United States

G. Ghibaudo

Graduate School of Physics Electronics and Materials, Grenoble, France

T. Grasser

TU Wien University, Wien, Austria

V. Huard

STMicroelectronics, Genève, Switzerland

D. P. Ioannou

International Business Machines Corp

H. Iwai

Tokyo Institute of Technology - Suzukakedai Campus, Yokohama, Japan

N. Labat

Laboratory of Material System Integration, Talence Cedex, France

B. Li

IBM Essex Junction, Essex Junction, Vermont, United States

J. Liou

University of Central Florida, Orlando, Florida, United States

J. Lutz

Chemnitz University of Technology, Chemnitz, Germany

I. Manic

University of Niš, Nis, Serbia

R. Menozzi

University of Parma, Parma, Italy

E. Miranda

University of Buenos Aires, Buenos Aires, Argentina

H. Momose

Toshiba Corporation Research and Development Center, Isogo-Ku, Yokohama, Japan

L.T. Nguyen

Texas Instruments Inc, Dallas, Texas, United States

A. Ortiz-Conde

Simon Bolivar University, Caracas, Venezuela, Bolivarian Republic of

A. Paskaleva

Bulgarian Academy of Sciences, Sofiya, Bulgaria

P. Perdu

Toulouse Space Centre, Toulouse, France

V.S. Pershenkov

Lomonosov Moscow State University, Moskva, Russian Federation

M.K. Radhakrishnan

J. M. Song
National Chung Hsing University, Taichung, Taiwan

J. Stathis

IBM Research, Yorktown Heights, New York, United States

V. Szekely

Budapest University of Technology and Economics, Budapest, Hungary

S. Terashima

M. Vanzi

University of Cagliari, Cagliari, Italy

S.H. Voldman

J.W.C. de Vries

G.Q.K. Zhang

NXP Semiconductors NV, Eindhoven, Netherlands

M. Zwolinksi

University of Southampton, Southampton, United Kingdom


我要分享  (欢迎您来完善期刊的资料,分享您的实际投稿经验)
研究领域:
投稿录用情况: 审稿时间:  个月返回审稿结果
本次投稿点评:
提交
down
wechat
bug