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SOLID STATE COMMUNICATIONS
基本信息
期刊名称 SOLID STATE COMMUNICATIONS
SOLID STATE COMMUN
期刊ISSN 0038-1098
期刊官方网站 http://www.elsevier.com/wps/find/journaldescription.cws_home/230/description#description
是否OA
出版商 Elsevier Ltd
出版周期 Weekly
始发年份 1963
年文章数 213
最新影响因子 2.1(2022)  scijournal影响因子  greensci影响因子
中科院SCI期刊分区
大类学科 小类学科 Top 综述
物理4区 PHYSICS, CONDENSED MATTER 物理:凝聚态物理4区
CiteScore
CiteScore排名 CiteScore SJR SNIP
学科 排名 百分位 1.49 0.450 0.641
Materials Science
Materials Chemistry
126 / 271 53%
Chemistry
General Chemistry
170 / 371 54%
Physics and Astronomy
Condensed Matter Physics
199 / 397 50%
补充信息
自引率 5.10%
H-index 120
SCI收录状况 Science Citation Index
Science Citation Index Expanded
官方审稿时间
网友分享审稿时间 数据统计中,敬请期待。
PubMed Central (PML) http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0038-1098%5BISSN%5D
投稿指南
期刊投稿网址 http://ees.elsevier.com/ssc/
收稿范围

Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. 
A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. 
The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.

收录体裁
Short Communications
Fast Track Articles
Full Length Articles
投稿指南 https://www.elsevier.com/journals/solid-state-communications/0038-1098/guide-for-authors
投稿模板
参考文献格式 https://www.elsevier.com/journals/solid-state-communications/0038-1098/guide-for-authors
编辑信息
Editor-in-Chief
Aron Pinczuk
Columbia University Department of Physics, 500 W 120th Street, New York, New York, NY 10027, United States
Executive Editorial Board
The University of Tokyo Institute for Solid State Physics, 5-1-5 Kashiwanoha, Chiba, 277-8581, Kashiwa, Japan 
University of Texas at Austin Oden Institute for Computational Engineering and Sciences, 201 East 24th St, Stop C0200 Austin, Austin, Texas, Texas78712-1229, United States
University of Antwerp Condensed Matter Theory, Groenenborgerlaan 171, 2020, Antwerpen, Belgium 
Hong Kong University of Science and Technology Department of Physics, Clear Water Bay, Kowloon, Hong Kong, Hong Kong 
Indian Institute of Science Bangalore Department of Physics, 560012, Bangalore, India
Editorial Board

Eva Andrei

Rutgers University Department of Physics and Astronomy, 136 Frelinghuysen Road, Piscataway, New Jersey, 08854-8019, United States  (Condensed matter experiment, 2D electron systems, graphene)

Nikita Averkiev

Physical-Technical Institute named after A F Ioffe Russian Academy of Sciences, Politechnicheskaya 26, 194021, St. Petersburg, Russian Federation (Defects, Spin Relaxation, Transport Phenomena Personal)

Gavin Bell

University of Warwick, CV4 7AL, Coventry, England, United Kingdom (Surfaces, Epitaxy, Semiconductors)

Luis Brey

Institute of Materials Science of Madrid, ICMM,Department of Energy, Environment and Health,Instituto de Ciencia de Materiales de Madrid, Sor Juana Ines de la Cruz 3, 28049, Cantoblanco, Madrid, Spain  (Condensed matter theory, electronic properties)

Josep Fontcuberta

Institute of Materials Science of Barcelona, Campus UAB Barcelona, 08193, Barcelona, Spain  (Thin film oxides, magnetic properties, charge transport properties, transition metal oxides)

Ralph Gebauer

Abdus Salam International Centre for Theoretical Physics Condensed Matter and Statistical Physics Section, Strada Costiera 11, 34151, Trieste, Italy (Electronic structure theory, optical properties, materials for energy applications)

Pawel Hawrylak

University of Ottawa, Department of Physics, Advanced Research Complex, Rm 407, Templeton Str.,, Ottawa, K1N 6N5, Ontario, Canada  (Nanoscience, quantum information, strongly correlated electrons, electronic and optical properties of semiconductor, nanostructures)

Tsuyoshi Kimura

The University of Tokyo Graduate School of Frontier Sciences Fundamental Science Studies Department of Advanced Materials Science Kimura Laboratory, 5-1-5 Kashiwanoha, 277-8561, Kashiwa, Japan  (Strongly correlated electron systems, magnetism, multiferroics, ferroelectrics)

Alessandra Lanzara

University of California Berkeley Department of Physics, 366 LeConte Hall MC 7300, Berkeley, California, 94720-7300, United States 

Yurii Lozovik

Institute of Spectroscopy of the Russian Academy of Sciences, Fizicheskaya 5, Troitzk, 142190, Moscow, Russian Federation  (Electronic structure and optical properties of nanostructures, excitons and polaritons, plasmons, strong correlated low-dimensional electron systems, nanotubes, graphene ,NEMS, computer simulations)

Michael Manfra

Purdue University Department of Physics, 525 Northwestern Ave., West Lafayette, Indiana, 47907-2036, United States  (MBE growth of III-V semiconductors, low temperature and high magnetic field transport and the fractional quantum Hall effect)

Roberto Merlin

University of Michigan Department of Physics, 450 Church Street, Ann Arbor, Michigan, 48109-1040, United States  (Optical properties, raman scattering, ultrafast opticsmetamaterials)

Vittorio Pellegrini

Italian Institute of Technology, Graphene Labs, Via Morego, 30, 16163, Genova, Italy (Transport and optics in low-dimensional semiconductor systems, energy applications based on two-dimensional crystals)

E.V. Sampathkumaran

Tata Institute of Fundamental Research, 400005, Mumbai, India  (Strongly correlated electron behavior, rare-earth alloys, oxides)

Xuechu Shen

Shanghai Institute of Technical Physics, 220 Handan Rd. Yangpu District, 200433, Shanghai, China 

Junren Shi

Peking University, 100871, Beijing, China  (Quantum Transport Theory, Spin-Orbit Effects)
Advisory Board

G.E.W. Bauer

Tohoku University, Sendai, Japan

J.A. Brum

Brazilian Synchrotron Light Laboratory, CAMPINAS, Brazil

X.-H. Chen

University of Science and Technology of China Department of Physics, Hefei, Anhui, China

K. Ensslin

Swiss Federal Institute of Technology, Zurich, Switzerland

V. Fal'ko

Lancaster University, Lancaster, United Kingdom

R.J. Haug

Leibniz University Hanover, Hannover, Germany

M. Heiblum

Weizmann Institute of Science, Rehovot, Israel

H. Hosono

Tokyo Institute of Technology - Suzukakedai Campus, Yokohama, Japan

L.V. Keldysh

Russian Academy of Sciences, Moskva, Russian Federation

C. Lacroix

NÉEL Institute, Grenoble, France

A. Lichtenstein

University of Hamburg, Hamburg, Germany

D.J. Lockwood

National Research Council Canada, Ottawa, Ontario, Canada

T.T.M. Palstra

University of Twente, Enschede, Netherlands

R.T. Phillips

University of Cambridge, Cambridge, United Kingdom

J.F. Sadoc

Paris-Sud University, Orsay, France

C.S. Sundar

Indira Gandhi Centre for Atomic Research, Kalpakkam, India

Z. Tang

Hong Kong University of Science and Technology Department of Physics, Hong Kong, Hong Kong

S. Tarucha

The University of Tokyo, Bunkyo-Ku, Tokyo, Japan

S. Ushioda

National Institute for Materials Science, Tsukuba-Shi, Japan

U.V. Waghmare

Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, India

E.G. Wang

Chinese Academy of Sciences, Beijing, China

M. Wang

Nanjing University, Nanjing, China

W. Wegscheider

Swiss Federal Institute of Technology, Zurich, Switzerland

X. Xie

Peking University, Beijing, China

B.F. Zhu

Tsinghua University, Beijing, China


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