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Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journalcovers circuits and systems. This topic includes but is not limited to
• Analog, digital, mixed, and RF circuits and related design methodologies
• Logic, architectural, and system level synthesis
• Testing, design for testability, built-in self-test
• Area, power, and thermal analysis and design
• Mixed-domain simulation and design
• Embedded systems
• Non-von Neumann computing and related technologies and circuits
• Design and test of high complexity systems integration
• SoC, NoC, SIP, and NIP design and test
• 3-D integration design and analysis
• Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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| 编辑信息 |
Editor-in-Chief E.G. FriedmanUniversity of Rochester Department of Electrical and Computer Engineering, Computer Studies Building, Rochester, New York, NY 14627, United States, Fax: +1 585 506 0074Phone Phone +1 585 275 1022 Email E.G. FriedmanSpecial Issue Editor Editorial Board M. AliotoNational University of Singapore, Singapore, Singapore Email M. AliotoC.H. ChangNanyang Technological University, Singapore, Singapore Email C.H. ChangM.H. ChowdhuryUniversity of Missouri Kansas City, Kansas City, Missouri, United States Email M.H. ChowdhuryI.B. DhaouUniversity of Monastir Higher Institute of Computer Science and Mathematics of Monastir, Monastir, Tunisia Email I.B. DhaouI.M. ElfadelKhalifa University Department of Electrical Engineering and Computer Science, Abu Dhabi, United Arab Emirates Email I.M. ElfadelJ.S. FriedmanUniversity of Texas at Dallas, Richardson, Texas, United States Email J.S. FriedmanF. FrustaciUniversity of Calabria Department of Computer Engineering Modelling Electronics and Systems, Rende, Italy Email F. FrustaciB. GhavamiShahid Bahonar University of Kerman, Kerman, Iran, Islamic Republic of Email B. GhavamiP. GiardSchool of Engineering and Applied Technology, Montreal, Quebec, Canada Email P. GiardN. GongUniversity of South Alabama, Mobile, Alabama, United States Email N. GongX. GuoLehigh University, Bethlehem, Pennsylvania, United States Email X. GuoM. R. HaiderUniversity of Alabama at Birmingham, Birmingham, Alabama, United States Email M. R. HaiderH. HeidariUniversity of Glasgow, Glasgow, Scotland, United Kingdom Email H. HeidariB. HuBroadcom Ltd, Irvine, California, United States Email B. HuF. KhatebBrno University of Technology, Brno, Czech Republic Email F. KhatebS. KoseUniversity of South Florida - Sarasota-Manatee, Sarasota, Florida, United States Email S. KoseF. KurdahiUniversity of California Irvine, Irvine, California, United States Email F. KurdahiV. KursunHong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong KongEmail V. KursunS. KvatinskyTechnion Israel Institute of Technology Faculty of Electrical Engineering, Haifa, IsraelEmail S. KvatinskyB. MohammadKhalifa University of Science Technology - Abu Dhabi Campus, Abu Dhabi, United Arab Emirates Email B. MohammadD. NirmalKarunya Institute of Technology and Sciences, Coimbatore, India Email D. NirmalD.G. PereraUniversity of Colorado at Colorado Springs, Colorado Springs, Colorado, United StatesEmail D.G. PereraD. RossiUniversity of Bologna - Rimini Campus, Rimini, Italy Email D. RossiI. SavidisDrexel University, Philadelphia, Pennsylvania, United States Email I. SavidisS. ShekharIntel Corp Hawthorn Farm, Hillsboro, Oregon, United States Email S. ShekharG.C. SirakoulisDemocritus University of Thrace Department of Electrical and Computer Engineeirng, Xanthi, Greece Email G.C. SirakoulisJ.E. Stine, Jr.Oklahoma State University Stillwater, Stillwater, Oklahoma, United States Email J.E. Stine, Jr.C.S. TanNanyang Technological University, Singapore, Singapore Email C.S. TanB. TaskinDrexel University, Philadelphia, Pennsylvania, United States Email B. TaskinA. TemanBen-Gurion University of the Negev, Be'er Sheva, Israel Email A. TemanB. VaisbandUniversity of California Los Angeles Electrical and Computer Engineering Department, Los Angeles, California, United States Email B. VaisbandU. VishnoiMarvell Semiconductor Inc, Santa Clara, California, United States Email U. VishnoiI. VourkasFederico Santa Maria Technical University, Valparaiso, Chile Email I. VourkasC. WangHuazhong University of Science and Technology, Wuhan, China Email C. WangJ. WangUniversity of South Alabama, Mobile, Alabama, United States Email J. WangR. WeerasekeraUniversity of Bristol School of Sociology Politics and International Studies, Bristol, United Kingdom Email R. WeerasekeraJ. XieVillanova University College of Engineering, Villanova, Pennsylvania, United States Email J. XieK. Xu
University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, China Email K. Xu H. YuSouthern University of Science and Technology, Shenzhen, China Email H. YuW. YuOld Dominion University, Norfolk, Virginia, United States Email W. YuZ. ZhangUniversity of Pennsylvania, Philadelphia, Pennsylvania, United States Email Z. Zhang
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