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Journal of Materials Science: Materials in Electronics
基本信息
期刊名称 Journal of Materials Science: Materials in Electronics
J Mater Sci: Mater Electron
期刊ISSN 0957-4522
期刊官方网站 https://www.springer.com/journal/10854
是否OA 混合
出版商 Springer Nature
出版周期 月刊
始发年份 1990
年文章数 2348
最新影响因子 2.8(2022)  scijournal影响因子  greensci影响因子
中科院SCI期刊分区
大类学科 小类学科 Top 综述
工程技术3区 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气4区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合4区
PHYSICS, APPLIED 物理:应用3区
PHYSICS, CONDENSED MATTER 物理:凝聚态物理4区
CiteScore
CiteScore排名 CiteScore SJR SNIP
学科 排名 百分位 2.16 0.487 0.705
Physics and Astronomy
Atomic and Molecular Physics, and Optics
58 / 173 66%
Materials Science
Electronic, Optical and Magnetic Materials
74 / 225 67%
Physics and Astronomy
Condensed Matter Physics
131 / 397 67%
Engineering
Electrical and Electronic Engineering
192 / 657 70%
补充信息
自引率 26.90%
H-index 62
SCI收录状况 Science Citation Index
Science Citation Index Expanded
官方审稿时间
33days
Submission to first decision
92days
Submission to acceptance
网友分享审稿时间 数据统计中,敬请期待。
PubMed Central (PML) http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0957-4522%5BISSN%5D
投稿指南
期刊投稿网址 https://www.editorialmanager.com/jmse/default.aspx
收稿范围

The Journal of Materials Science: Materials in Electronics was founded in 1990 and since then it has grown into a major peer-reviewed international journal.

材料现代电子学中的应用的研究论文,期刊涉及的主题广泛,包括新材料(例如化合物和合金)的合成、生长和制备,加工、制造、键合和封装,微观结构的表征,结构-性质关系,电,光,介电和磁性能。以及新材料在电子领域的应用。

收录体裁
Research papers, commentaries, introductions, editorials, reports, errata, etc
投稿指南 https://www.springer.com/journal/10854/submission-guidelines
投稿模板
参考文献格式
编辑信息

Editor-in-Chief:

Safa Kasap
University of Saskatchewan, Canada

Founding Editor and Former Editor-in-Chief:

Arthur F. W. Willoughby
Southampton University, UK

Deputy Editors-in-Chief:

Jun Luo
Chinese Academy of Sciences, China

Patrick J. McNally
Dublin City University, Ireland

Editors:

Peter Capper
Selex ES, UK

Homero Castaneda-Lopez
Texas A&M University, USA

Kalyan Kumar Chattopadhyay
Javadpur University, India

I.M. Dharmadasa
Sheffield Hallam University, UK

Chris Groves
Durham University, UK

C. Robert Kao
National Taiwan University, Taiwan

Maurizio Martino
Università del Salento, Italy

Amlan J. Pal
Indian Association for the Cultivation of Science, India

Dong-Liang Peng
Xiamen University, China

Henry H. Radamson
Royal Institute of Technology, Sweden

Karthik Shankar
University of Alberta, Canada

Velumani Subramaniam
CINVESTAV, Mexico

Stephen Sweeney
University of Surrey, UK

Lydia H. Wong
Nanyang Technological University, Singapore

Wu Yan
China University of Geosciences (Wuhan), China

Ying Yang
Tsinghua University, China

Fu Rong Zhu
Hong Kong Baptist University, Hong Kong

Assistant Editor:

Chunzi Zhang
University of Saskatchewan, Canada

Editorial Board:

Sadao Adachi, Gunma University, Japan; Dan Allwood, University of Sheffield, UK; Hajime Asahi, Osaka University, Japan; Neil S. Beattie Northumbria University, UK; Bhaskar Bhattacharya,Banaras Hindu University, India;Rana Biswas, Ames Laboratory & Iowa State University, USA; David Bloor, Durham University, UK; Anna Paola Caricato,Università del Salento, Italy;Y.C. (Archie) Chan, City University of Hong Kong, China; Nandu Chaure, Savitribai Phule Pune University, India;Kunji Chen, Nanjing University, China; W. (Jim) Choyke, University of Pittsburgh, USA; Jan Evans-Freeman, University of Canterbury, New Zealand; Antonin Fejfar, Academy of Sciences of the Czech Republic, Czech Republic; Darrel Frear, Freescale Semiconductor, USA; Shubhra Gangopadhyay, University of Missouri-Columbia, USA; Christopher Gourlay, Imperial College London, UK; Jong Heo, Pohang University of Science and Technology, Korea; Dan Hewak, University of Southampton, UK; Oliver Ileperuma, Institute of Chemistry Ceylon, Sri Lanka; Alessia Irrera CNR- Institute for Chemical and Physical Processes (IPCF), Messina, Italy; Stuart J. C. Irvine, Swansea University, UK; Chennupati Jagadish, The Australian National University, Australia; David Jiles, Iowa State University, USA; Zahangir Kabir;Concordia University, Canada; Karen Kavanagh, Simon Fraser University, Canada; Iwan Kityk Czestochowa University of Technology, Poland; Chien-Neng Liao, National Tsing Hua University, Taiwan; Leszek Malkinski, University of New Orleans, USA; Budhika Mendis Durham University, UK; Maria Mitkova Boise State University, USA; Yashowanta Mohapatra, Indian Institute of Technology Kanpur, India; Hadis Morkoç, Virginia Commonwealth University, USA; Hiroyoshi Naito, Osaka Prefecture University, Japan; Hiroshi Nishikawa, Osaka University, Japan; Habib Pathan, Savitribai Phule Pune University, India;Kristin M. Poduska, Memorial University of Newfoundland, Canada; Adithya Prakash, Intersil, USA;Jatin RathIndian Institute of Technology, Madras, India; Alla ReznikLakehead University, Thunder Bay, Canada; Ben Ruck, Victoria University of Wellingon, New Zealand; Harry Ruda, University of Toronto, Canada; Arie Ruzin Tel Aviv University, Israel; Rene van Swaaij, Delft University of Technology, The Netherlands; Katsuhisa Tanaka, Kyoto University, Japan; Ayse Turak,McMaster University, Canada; Takashi Uchino, Kobe University, Japan; Neil White, University of Southampton, UK; Takayuki Yanagida, Nara Institute of Science and Technology, Japan; Alex (Ya Sha) Yi, University of Michigan, USA


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