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JOURNAL OF APPLIED PHYSICS
基本信息
期刊名称 JOURNAL OF APPLIED PHYSICS
J APPL PHYS
期刊ISSN 0021-8979
期刊官方网站 http://jap.aip.org
是否OA
出版商 American Institute of Physics
出版周期 Semimonthly
始发年份 1937
年文章数 2097
最新影响因子 3.2(2022)  scijournal影响因子  greensci影响因子
中科院SCI期刊分区
大类学科 小类学科 Top 综述
物理3区 PHYSICS, APPLIED 物理:应用3区
CiteScore
CiteScore排名 CiteScore SJR SNIP
学科 排名 百分位 2.33 0.746 1.047
Physics and Astronomy
General Physics and Astronomy
58 / 215 73%
补充信息
自引率 8.40%
H-index 269
SCI收录状况 Science Citation Index
Science Citation Index Expanded
官方审稿时间
网友分享审稿时间 数据统计中,敬请期待。
PubMed Central (PML) http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0021-8979%5BISSN%5D
投稿指南
期刊投稿网址 http://jap.peerx-press.org/cgi-bin/main.plex
收稿范围

The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research.

Topics covered in JAP are diverse and reflect the most current applied physics research, including:

  • Applied biophysics
  • Dielectrics, ferroelectrics, and multiferroics
  • Electrical discharges, plasmas, and plasma-surface interactions
  • Emerging, interdisciplinary, and other fields of applied physics
  • Magnetism, spintronics, and superconductivity
  • Organic-Inorganic systems, including organic electronics
  • Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena
  • Physics of devices and sensors
  • Physics of materials, including electrical, thermal, mechanical and other properties
  • Physics of matter under extreme conditions
  • Physics of nanoscale, mesoscale, and low-dimensional systems
  • Physics of semiconductors
  • Thin films, interfaces, and surfaces

The Journal of Applied Physics publishes manuscripts that:
- Develop underlying physical principles for innovative technologies
- Present scientific advances to modern applied physics problems across multiple disciplines
- Enable real world applications based on innovative applied physics
- Identify the physical reasons for materials properties

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编辑信息
Editor-in-Chief

André Anders
Director, Leibniz Institute of Surface Engineering (IOM), Leipzig, Germany

Deputy Editors

Christian Brosseau
Université de Bretagne Occidentale, France

Laurie E. McNeil
The University of North Carolina at Chapel Hill, Chapel Hill, NC, USA

Laurie E. McNeil
The University of North Carolina at Chapel Hill, Chapel Hill, NC, USA

Associate Editors

David Aspnes
North Carolina State University, Raleigh, NC , USA

Marcela Bilek
University of Sydney, Australia

Robert C. Birtcher
Argonne National Laboratory, Argonne, IL, USA

Valentino R. Cooper
Oak Ridge National Laboratory, Oak Ridge, TN, USA

Rachel S. Goldman
University of Michigan, Ann Arbor, MI, USA

Jaime Gómez Rivas
DIFFER-Dutch Institute for Fundamental Energy Research and Eindhoven University of Technology, Eindhoven, The Netherlands

Axel Hoffmann
Argonne National Laboratory, Argonne, IL, USA

Pawel Keblinski
Rensselaer Polytechnic Institute, Troy, NY, USA

LaShanda Korley
University of Delaware, Newark, DE, USA

Jiangyu Li
Shenzhen Institutes of Advanced Technology, Shenzhen, China

Wei Lu
Shanghai Institute of Technical Physics, Shanghai, China

Andreas Mandelis
University of Toronto, Toronto, Canada

François M. Peeters
University of Antwerp, Belgium

Lian-Mao Peng
Peking University, Beijing, China

Alain Polian
Université Pierre et Marie Curie, Paris, France

Yevgeny Raitses
Princeton Plasma Physics Laboratory, Princeton, NJ, USA

Hariharan Srikanth
University of South Florida, Tampa, FL, USA

Masayoshi Tonouchi
Osaka University, Osaka, Japan

Paolo Vavassori
CIC nanoGune Consolider, San Sebastian, Spain

Kin Man Yu
City University of Hong Kong, Kowloon, Hong Kong


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