Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
Peer Review
All submitted manuscripts are subject to initial appraisal by the Editor, and if found suitable for further consideration, will be peer-reviewed by independent and anonymous expert referees. 
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EDITOR-IN-CHIEF: 
 
GEORGE W. TAYLOR 
Princeton Resources, P.O. Box 211 
Princeton, New Jersey 08542-0211, USA
 
EDITORS: 
 
CARLOS A. PAZ DE ARAUJO 
Department of Electrical and Computer Engineering 
University of Colorado 
Colorado Springs, Colorado 80933-7150, USA 

Deborah J. Taylor 
Crawley Research Associates 
3300 Bee Cave Road Suite 560-226 
Austin, Texas 78746, U.S.A
 
ASSOCIATE EDITORS:
 
ORLANDO AUCIELLO - Materials Science & Engineering, University of Texas-Dallas, Richardson, TX 75080 
YOSHIHIRO ISHIBASHI - Professor Emeritus, Nagoya University, Nagoya, 466-0851, Japan 
RAM RAMESH - Materials Research Science & Engineering, University of Maryland, College Park, MD 20742, USA 
JAMES F. SCOTT - Cavendish Laboratory, University of Cambridge 
TADASHI SHIOSAKI - Graduate School of Materials Science, Nara Institute of Science and Technology, Nara 630-0101, JAPAN 
ALEXANDER S. SIGOV - Moscow Technological University (MIREA), Prospekt Vernadskogo 78, Moscow 117454, Russia 
WOLFRAM WERSING  - Corporate Research and Development, Siemens AG, Otto-Hahn-Ring 6, W-8000, Munchen 83 Germany 
  
REVIEW ARTICLES EDITOR: 

AMAR BHALLA - Department of Electrical & Computer Engineering, University of Texas at San Antonio, One UTSA Circle, San Antonio, TX 78249, USA
EDITORIAL BOARD:
M. ADACHI  -  Toyoma, Japan 
C.L. CHEN - San Antonio, Texas, USA 
C.L. CHOY -  Kowloon, Hong Kong 
M.W. COLE  -  Aberdeen, Maryland, USA 
HAILIN CONG - Qingdazo, China 
S.K. DEY  -  Tempe, Arizona, USA 
DUCINEI GARCIA - Sao Carlos, Brazil 
A. GREKOV  -  Rostov-on-Don, Russia 
G.H. HAERTLING -  Albuquerque, New Mexico, USA 
R. KATIYAR -  San Juan, Puerto Rico 
H.-G. KIM -  Seoul, Korea 
S.S. KIM - Kyungnam, South Korea 
A.I. KINGON -  Raleigh, North Carolina, USA 
HATHAIKARN MANUSPIYA - Bangkok, Thailand 
T. MIHARA -  Tokyo, Japan 
F.A. MIRANDA -  Cleveland, Ohio, USA 
Y. MIYASAKA -  Kawasaki, Japan 
M. NODA -  Osaka, Japan 
M. OKUYAMA -  Osaka, Japan 
R. PANHOLZER -  Monterey, California, USA 
B. PLOSS  -  Jena, Germany 
SHASHANK PRIYA - Blacksburg, Virginia USA
AVADH SAXENA - Los Alamos, New Mexico, USA 
N. SETTER -  Lausanne, Switzerland 
M. SHIMIZU -  Hyogo, Japan 
V. YA SHUR -  Ekaterinburg, Russia 
R.P. TANDON - Delhi, India 
M.A. TODD - Malvern, UK                  
TATYANA VOLK - Moscow, Russia
Y. WATANABE  -  Fukuoka, Japan 
R. WHATMORE -  Towcester, UK
W. ZHU - Singapore