易波 - 电子科技大学 - 电子科学与工程学院

个人简介

教育经历： 2008.09-2012.06-电子科技大学-学士-微电子学 2012.09-2016.12-电子科技大学-博士-微电子学与固体电子学-导师-陈星弼院士 2017.02留校工作-讲师

研究领域

主要研究新型功率器件和功率集成电路，包括IGBT，Super-Junction devices，LDMOS等。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1] B. Yi and X. Chen, “A 300 V Ultra Low Specific On-Resistance High-Side p-LDMOS with Auto-biased n-LDMOS for SPIC,” IEEE Trans. on Power Electronics, vol. 32, no. 1, pp. 551-560, 2017. [2] B. Yi, J. J. Cheng and X. B. Chen, “A High-voltage “Quasi-p-LDMOS” using Electrons as Carriers in Drift Region Applied for SPIC,” IEEE Trans. on Power Electronics, vol. 33, no. 4, pp. 3363 – 3374, 2018. [3] B. Yi, J. J. Cheng, M. F. Kong and X. B. Chen, “A High-Voltage p-LDMOS with Enhanced Current Capability Comparable to Double RESURF n-LDMOS,” in Proc. ISPSD, May. 2018. [4] B. Yi, M. F. Kong, J. J. Cheng, “Simulation Study of a p-LDMOS with Double Electron Paths to Enhance Current Capability,” IEEE Electron Device Letters, 2018. [5] B. Yi, Z. Lin and X. B. Chen, “Snapback-free reverse-conducting IGBT with low turnoff loss,” Electronics Letters, vol. 50, no. 9, pp. 703-705, 2014. [6] B. Yi, Z. Lin and X. B. Chen, “Study on HK-VDMOS with Deep Trench Termination,” Superlattices and Microstructures, vol. 75, pp. 278-286, 2014. [7] B. Yi, X. Lyu, and X. B. Chen, “A New Super-Junction VDMOS Realizing Fast Reverse Recovery,” in Proc. IEEE 11th Power Electronics and Drive Systems, Jun. 2015. [8] L. X. Liang, B. Yi, X. B. Chen, “A Negative Low-Voltage Power Supply Integrated With High-Voltage Devices”, IEEE Transactions on Electron Devices, 2018, 65(5): 1849-1855. [9] M. F. Kong, B. Yi and B. K. Zhang, “A dual channel three-terminal np-LDMOS with both majorities for conduction,” Superlattices and Microstructures, 2017.