罗谦 - 电子科技大学 - 电子科学与工程学院

个人简介

教育背景 2000.09 – 2007.04，电子科技大学，微电子学与固体电子学，硕博连读，博士 1994.09 – 1998.06，四川大学，微电子技术，本科工作履历 2013.06–至今, 电子科技大学，微电子与固体电子学院，副教授 2009.10 – 2010.10，香港科技大学，ECE系（Department of Electronic and Computer engineering），博士后 2007.05 – 2013.05，电子科技大学，微电子与固体电子学院，讲师

研究领域

研究内容1:化合物半导体方向 1. 化合物半导体异质结物理。 2．GaN基高电子迁移率晶体管器件物理及制备工艺。 3. 针对化合物半导体器件的新型耐压终端技术。研究内容2:Si基小尺寸器件方向 1. 应变Si的制备与表征。 2．新型应变结构及相关器件物理。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1. Qian Luo, Di Zhao, Xiangzhan Wang, Qi Yu, Wei Cui, Kaizhou Tan, Stress Modulation Technology for 45nm-gate-CMOS Strained by a Compressive SiN Film, Nanoscience and Nanotechnology Letters (to be published) 2. Qian Luo and Qi Yu, Self-consistent Results for the 2DEG in a Quantized Triangular Well, Nanoscience and Nanotechnology Letters，Vol. 6, P 861-864, 2014 3. Zhao Di, Luo Qian, Wang Xiangzhan, Yu Qi, Cui Wei, Tan Kaizhou, Performance Enhancement of c-CESL-Strained 95nm-gate NMOSFET Using Trench-Based Structure, Journal of semiconductors (to be published) 4. Xiangzhan Wang, Qingping Zeng, Bin Liu, Cheng Gan, Qian Luo, Qi Yu, Yang Liu, Kaizhou Tan, Xianwei Ying, A Stress Concentration MOSFET Structure, IEEE Transactions on Electron Devices, 2014, 61(1), P.207 5. Ziqi Zhao, Ziyu Zhao, Qian Luo, and Jiangfeng Du, High-voltage RESURF AlGaN/GaN high electron mobility transistor with back electrode, Electronic Letters, 2013, 49(25), P.16380 6. Qian Luo, Bin Liu, Qi Yu, Xiang-zhan Wang, Jing-chun Li, Stress Management for CESL Based Strained PMOSFET Using Trench Structure, IEEE. 2012 11th International Conference on Solid-State and Integrated Circuit Technology Proceedings（ICSICT-2012）, Oct. 29-Nov. 1, 2012, Xi’ an, China, P. S25_04 7. Qian Luo and Qi Yu，Electric Field Modulation by Introducing a Hk Dielectric Film of Tens of Nanometers in AlGaN/GaN HEMT，Nanoscience and Nanotechnology Letters, 2012, 4, P.1 8. Qian Luo, JiangFeng Du, XiangZhan Wang, Ning Ning, Yang Liu and Qi Yu, “An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor”, Advanced Materials Research, Optical, Electronic Materials and Applications II, Vol.529, p 33-36 (2012) 9. Xiangzhan Wang, Guixia Qin, Qian Luo，Influence of the STI Sidewall Angle on the Induced Channel Stress in Nanoscaled PMOSFETs，Journal of the Korean Physical Society , 2012, 60(10), P.1639