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52. Wanjun Chen, Hong Tao, Lunfei Lou, Chao Liu, Wu Cheng, Xuefeng Tang, Hongquan Liu, Qi Zhou,Xiaochuan Deng, Zhaoji Li, Bo Zhang, Member, IEEE, "Low Loss Insulated Gate Bipolar Transistor with Electron Injection (EI-IGBT)," IEEE Journal of the Electron Devices Society Page(s):275 - 282 / DOI:10.1109/JEDS.2017.2701791. 51. Yuanyuan Shi, Qi Zhou *, Anbang Zhang, Liyang Zhu, Yu Shi, Wanjun Chen, Zhaoji Li and Bo Zhang, "Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3GaNMOS Device," Nanoscale Research Letters (2017) 12:342. 50. Fangzhou Wang, Wanjun Chen *, Zeheng Wang, Ruize Sun, Jin Wei, Xuan Li, Yijun Shi, Xiaosheng Jin,Xiaorui Xu, Nan Chen, Qi Zhou, Bo Zhang, "Simulation design of uniform low turn-on voltage and highreverse blocking AlGaNGaN power field effect rectifier with trench heterojunction anode," Superlattices and Microstructures 105 (2017) 132-138. 49. Xiaorui Xu, Wanjun Chen *, Chao Liu, Nan Chen, Hong Tao, Yijun Shi, Yinchang Ma, Qi Zhou, and Bo Zhang， "Gate field plate IGBT with trench accumulation layer for extreme injection enhancement," Superlattices and Microstructures 104 (2017) 54-62. 48. Qi Zhou *, Yi Yang, Kai Hu, Ruopu Zhu, Wanjun Chen, and Bo Zhang, "Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode," IEEE Trans. on Industrial Electronics, in press (Impact factor: 6.38) 47. Q. Zhou *, Z. H. Wang, X. Y. Zhou, A. B. Zhang, Y. Y. Shi, L. Liu, Y. G. Wang, Y. L. Fang, Y. J. Lv, Z. H. Feng,and B. Zhang, "Physics of Dynamic Threshold Voltage and Steep Subthreshold Swing in Al2O3/InAlN/GaNMOSHEMTs," Semicond. Sci. Technol., vol. 31, pp. 035005, Jan. 2016. 46. Qi Zhou *, Li Liu, Anbang Zhang, Bowen Chen, Yang Jin, Yuanyuan Shi, Zeheng Wang, Wanjun Chen, and Bo Zhang *, "7.6 V Threshold Voltage High Performance Normally-off Al2O3/GaN MOSFET Achieved byInterface Charge Engineering," IEEE Electron Device Letters vol. 37, no.2, pp.165 - 168, Feb. 2016. 45. Yuanyuan Shi, Qi Zhou, Yang Jin, Bowen Chen, Wanjun Chen, Wei Huang and Bo Zhang," Impact of interface traps on switching behavior of Normally-OFF AlGaN/GaN MOS-HEMTs," Physica Solidi Status-C 1–4 (2016) / DOI 10.1002/pssc.201510189 44.Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Hushan Cui, Junfeng Li, Chao Zhao, Xinyu Liu, Jinhan Zhang, Qi Zhou, Wanjun Chen, Bo Zhang, and Lifang Jia ." Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs"[J]. Journal of acuum Science & Technology B, 2016, 34(4): 041202. 43. Wanjun Chen, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng, Qi Zhou, Zhaoji Li and Bo Zhang, "High Peak Current MOS Gate-Triggered Thyristor with Fast Turn-on Characteristics for Solid-State Closing SwitchApplications," IEEE Electron Device Letters vol. 37, no.2, pp.205-208, Feb. 2016. 42. Yijun Shi, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Junfeng Li, Chao Zhao, Shuiming Li,Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen, Qi Zhou, Bo Zhang, and Xinyu Liu, "Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High- Temperature Gate Recess,"IEEE Trans. on Electron Devices vol. 63, no.2, pp.614-619, Feb. 2016. 41. Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Yingkui Zheng, Yankui Li, Chao Zhao, Xinyu Liu, Qi Zhou, Wanjun Chen and Bo Zhang, "Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing," Applied Physics Lett., vol. 107, no. 26, pp.262109, 2015 40. Qi Zhou *, Li Liu, Xingye Zhou, Anbang Zhang, Yuanyuan Shi, Zeheng Wang, Yuan Gang Wang, Yulong Fang, Yuanjie Lv, Zhihong Feng and Bo Zhang, "Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection," IET Electronics Lett., vol. 51, no. 23, pp: 1889–1891, Nov. 2015 39. Qi Zhou *, Yang Jin, Yuanyuan Shi, Jinyu Mou, Bao Xu, Bowen Chen, and Bo Zhang, "High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode with MIS-Gated Hybrid Diode," IEEE Electron Device Lett., vol. 36, no. 7, Jul. 2015. 38. Qi Zhou *, Bowen Chen, Yang Jin, Sen Huang, Ke Wei, Xinyu Liu, Xu Bao, Jinyu Mou, and Bo Zhang, "High- Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs with 626MW/cm2 Figure of Merit,"IEEE Trans. on Electron Devices, vol. 62, no. 3, pp: 776-781, Mar. 2015. 37. Qi Zhou *, Shu Yang, Wanjun Chen, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications," Solid-State Electronics, vol.91, pp: 19-23, 2014. 36. Qi Zhou *,, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement," IEEE Trans. on Electron Devices, vol. 60, no. 3, pp: 1075-1081, Mar. 2013. 35. Qi Zhou *,, W. Chen, C. Zhou, B. Zhang and K.J. Chen, "High sensitivity AlGaN/GaN lateral field-effect rectifier for zero-bias microwave detection," IET Electronics Lett., vol. 49, no. 22, pp: 1391-1393, Oct. 2013. 34. Qi Zhou *,, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications,"Electrochemical Society Transactions , vol. 54, no. 4, pp: 351-363, Oct. 2013. 33. Qi Zhou *,, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance," Jpn. J. Appl. Phys. vol. 51, 04DF02, Apr. 2012.
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