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(36) Xiaobiao Han, Yuebo Liu, Yuan Ren, Jieying Xing, Tongtong Zhu, Zhisheng Wu, Yang Liu, Baijun Zhang*, Semipolar {112̅ 2} InGaN/GaN multiple quantum well optically pumped laser diodes selectively grown on Si (111) substrates，Materials Science in Semiconductor Processing, 91, 327–332, (2019) (35) Jieying Xing, Dejia Huang, Yaqiong Dai, Yuebo Liu, Yuan Ren, Xiaobiao Han, Hang Yang, Yaqian Hou, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors, J. Appl. Phys. 124, 034904 (2018) (34) Xiaobiao Han, Hui Luo, Hang Yang, Jie Chen, Changming Zhong, Jiezhi Liang, Jieying Xing, Zhisheng Wu, Yang Liu* and Baijun Zhang*, Effects of surface migration on InGaN/GaN multiple quantum wells selectively grown on periodic stripe openings separated by large SiO2 covered spacing on Si (111) substrates, Materials Science in Semiconductor Processing, 87, 181–186, (2018) (33) Jieying Xing, Yinsong Chen, Yuebo Liu, Jiezhi Liang, Jie Chen, Yuan Ren, Xiaobiao Han, Changming Zhong, Hang Yang, Dejia Huang, Yaqian Hou, Zhisheng Wu, Yang Liu and Baijun Zhang*, Enhancement of Emission of InGaN/GaN Multiple-Quantum-Well Nanorods by Coupling to Au-Nanoparticle Plasmons, J. Appl. Phys. 123, 193101 (2018) (32) Jie Chen, Xiaobiao Han, Puman Huang, Weijie Chen, Jiezhi Liang, Changming Zhong, Zhengzhou Pan, Zhisheng Wub, Yang Liu, Baijun Zhang*, Schottky performance variation on r-plane and c-plane of GaN micro, truncated-pyramid grown by selective area MOCVD, Materials Science in Semiconductor Processing 63, 248–252 (2017) (31) Jie Chen, Pu-Man Huang, Xiao-Biao Han,Zheng-Zhou Pan, Chang-Ming Zhong, Jie-Zhi Liang,Zhi-Sheng Wu, Yang Liu* and Baijun Zhang*, Influence of adatom migration on wrinkling morphologies ofAlGaN/GaN micro-pyramids grown by selective MOVPE, Chinese Physics B26, 068101 (2017). (30) Qiang Liao, Yibin Yang, Weijie Chen, Xiaobiao Han, Jie Chen, Wenjie Zang, Hui Luo, Jiali Lin, Yunling Qiu, Yinsong Chen, Jingting Wei, Zhisheng Wu, Iatneng Chan, Yang Liu*, and Baijun Zhang*, Fabrication and properties of thin-film InGaN/GaN multiple quantum well light-emitting diodes transferred from Si (111) substrate onto a thin epoxy resin carrier, Journal of Display Technology Vol. 12 (12), pp. 1602-1608 (2016). (29) Jingting Wei, Baijun Zhang and Gang Wang, Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate, Chinese Journal of Electronics, Vol.25, No.4, pp672-677 (2016) (28) Weijie Chen, Jiali Lin, Yinsong Chen, Xiaobiao Han, Jie Chen, Qiang Liao, Yunling Qiu, Zhisheng Wu, Yang Liu*, and Baijun Zhang*, Dual-color InGaN/GaN Pyramidal Micro Light-emitting Diode Selectively Grown on SiO2 Masked Si Substrate, Journal of Display Technology, Vol. 12(4), pp 412-416, (2016) (27) Weijie Chen, Xiaobiao Han, Jiali Lin, Guoheng Hu, Minggang Liu, Yibin Yang, Jie Chen, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Migration characterizations of Ga and In adatoms on dielectric surface in selective MOVPE, Chinese Physics B, Vol. 24 (11), 118101 (2015) (26) Yibin Yang, Minggang Liu, Weijie Chen, Xiaobiao Han, Jie Chen, Xiuqi Lin, Jiali Lin, Hui Luo, Qiang Liao, Wenjie Zang, Yinsong Chen, Yunling Qiu, Zhisheng Wu, Yang Liu*, and Baijun Zhang*, In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in MOCVD system, Chinese Physics B. Vol. 24 (9), 096103 (2015) (25) Weijie Chen, Jiali Lin, Guoheng Hu, Xiaobiao Han, Minggang Liu, Yibin Yang, Zhisheng Wu, Yang Liu, and Baijun Zhang*, GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid, J. Crys. Growth 426, pp. 168-172 (2015) (24) Yibin Yang, Yuan Ren, Yangxiang Chen, Minggang Liu, Weijie Chen, Xiaobiao Han, Xiuqi Lin, Qiang Liao, Wenjie Zang, Hui Luo, Jiali Lin, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Light output enhancement of GaN-based light-emitting diodes by maskless surface roughening, Microelectronic Engineering (MEE), 139, pp. 39-42 (2015) (23) Minggang Liu, Yibin Yang, Peng Xiang, Weijie Chen, Xiaobiao Han, Xiuqi Lin, Jiali Lin, Hui Luo, Qiang Liao, Wenjie Zang, Zhisheng Wu, Yang Liu and Baijun Zhang*, Influences of Stress on the Properties of GaN/InGaN Multiple Quantum Wells LEDs Grown on Si (111) Substrate, Chinese Physics B. Vol. 24 (6), 068503 (2015) (22) Weijie Chen, Guoheng Hu, Jianliang Jiang, Minggang Liu, Yibin Yang, Peng Xiang, Gangwei Hu, Yan Lin, Zhisheng Wu, Yang Liu and Baijun Zhang*, "Electrically Driven Single Pyramid InGaN/GaN Micro Light-emitting Diode Grown on Silicon Substrate," Journal of Display Technology, Vol. 11 (3), March, pp. 285-291 (2015) (21) Weijie Chen, Guoheng Hu, Jiali Lin, Jianliang Jiang, Minggang Liu, Yibin Yang, Gangwei Hu, Yan Lin, Zhisheng Wu, Yang Liu and Baijun Zhang*, High-performance single pyramid micro light-emitting diode with leakage current confined layer, Applied Physics Express 8, 032102 (2015) (20) Minggang Liu, Yunqian Wang, Yibin Yang, Xiuqi Lin, Peng Xiang, Weijie Chen, Xiaobiao Han, Wenjie Zang, Qiang Liao, Jiali Lin, Hui Luo, Zhisheng Wu, Yang Liu, Baijun Zhang*, Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes, Chinese Physics B. Vol. 24 (3), 038503 (2015) (19) Yibin Yang, Gangwei Hu, Peng Xiang, Minggang Liu, Weijie Chen, Xiaobiao Han, Guoheng Hu, Yan Lin, Xiuqi Lin, Wenjie Zang, Zhisheng Wu, Yang Liu, and Baijun Zhang*, "Enhancement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with TiO2/SiO2-Al omnidirectional reflector," Journal of Display Technology. Vol. 10 ( 12), pp. 1064-1069 (2014) (18) Yibin Yang, Yan Lin, Peng Xiang, Minggang Liu, Weijie Chen, Xiaobiao Han, Gangwei Hu, Guoheng Hu, Wenjie Zang, Xiuqi Lin, Zhisheng Wu, Yang Liu, and Baijun Zhang*, “Vertical-conducting InGaN/GaN multiple quantum wells LEDs with AlN/GaN distributed Bragg reflectors on Si(111) substrate”, Applied Physics Express 7, 042102 (2014).
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