李黄龙 - 清华大学 - 精密仪器系

个人简介

教育背景 2010.10 – 2014.07 剑桥大学电子工程系，博士 2006.09 – 2010.07 北京大学物理系，本科工作履历 2019.06 至今清华大学精密仪器系，副教授 2017.02 – 2019.06 清华大学精密仪器系，助理教授 2014.08 – 2017.01 清华大学精密仪器系，博士后

研究领域

半导体信息器件、神经形态工程、半导体信息材料、计算材料学

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

S. Jia#, H. Li#, T. Gotoh, C. Longeaud, B. Zhang, J. Lyu, S. Lv, M. Zhu*, Z. Song*, Q. Liu*, J. Robertson, and M. Liu, Ultrahigh drive current and large selectivity in GeS selector, Nature Communications, 11, 4636 (2020) D. Cheng, D. Kong, X. Sheng, L. Yin, and H. Li*, Perovskite hetero-anionic-sublattice interfaces for optoelectronics and nonconventional electronics, Nanoscale 12, 7263 (2020) X. Xu, J. Robertson, and H. Li*, Semiconducting few-layer PdSe2 and Pd2Se3: native point defects and contacts with native metallic Pd17Se15, Physical Chemistry Chemical Physics 22, 7365 (2020) H. Li* and W. Chen, First-principles prediction of the native filament: dielectric interfaces for the possible filamentary switching mechanism in chalcogenide selector devices, Journal of Applied Physics 127, 045105 (2020) H. Li* and J. Robertson, A unified mid-gap defect model for amorphous GeTe phase change material, Applied Physics Letters 116, 052103 (2020) W. Chen and H. Li*, Native filament-to-dielectric interfaces in phase change superlattice memories, Microelectronic Engineering 215, 111007 (2019) H. Li and J. Robertson*, Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices, Scientific Reports 9, 1867 (2019) J. Lyu#, J. Pei#, Y. Guo#, J. Gong, and H. Li*, A new opportunity for two-dimensional van der Waals heterostructures: making steep-slope transistors, Advanced Materials 32, 1906000 (2019) H. Li#*, X. Xu#, Y. Zhang#, R. Gillen, L. P. Shi, and J. Robertson, Native point defects of semiconducting layered Bi2O2Se, Scientific Reports 8, 10920 (2018) Z. Zhang#, Y. Wang#, G. Wang#, J. Mu#, M. Ma, Y. He, R. Yang, and H. Li*, Electrochemical metallization cell with solid phase tunable Ge2Sb2Te5 electrolyte, Scientific Reports 8, 12101 (2018) Z. Zhang#, Y. Wang#, Y. Luo#, Y. He, M. Ma, R. Yang, and H. Li*, Electrochemical metallization cell with anion supplying active electrode, Scientific Reports 8, 12617 (2018) H. Li* and X. Xu, Electronic Structures of Ge2Sb2Te5/Co2FeX (X: Al, Si) Interfaces for Phase Change Spintronics, ACS Omega 3, 14462 (2018) Z. Zhang#, T. Li#, Y. Wu#, Y. Jia#, C. Tan, X. Xu, G. Wang, J. Lv, W. Zhang*, Y. He, J. Pei, C. Ma, G. Li, H. Xu, L. P. Shi*, H. Peng*, and H. Li*, Truly Concomitant and Independently Expressed Short- and Long-Term Plasticity in a Bi2O2Se-Based Three-Terminal Memristor, Advanced Materials 31, 1805769 (2019) H. Li#*, Z. Zhang#, and L. P. Shi*, Identifying and engineering the electronic properties of the resistive switching interface, Journal of Electronic Materials 45, 1142 (2016) Z. Zhang#, H. Li#*, and L. P. Shi*, Correlation and ordering of defects in the formation of conducting nanofilaments, Journal of Physics D: Applied Physics 49, 125303 (2016) H. Li*, R. Gillen, and J. Robertson*, The screening effects of the screened exchange hybrid functional in surface systems: a case study on the CO/Pt(111) problem, AIP Advances 6, 065309 (2016) H. Li#*, J. Pei#, and L. P. Shi*, Electronic structure and spin configuration trends of single transition metal impurity in phase change material, Journal of Electronic Materials 45, 5158 (2016) L. Zhang#, H. Li#, Y. Guo, K. Tang, J. Woicik, J. Robertson, and P. C. McIntyre*, Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures, ACS Applied Materials & Interfaces 7, 20499 (2015) H. Li, Y. Guo, and J. Robertson*, Dopant compensation in HfO2 and other high K oxides, Applied Physics Letters 104, 192904 (2014) H. Li and J. Robertson*, Behaviour of hydrogen in wide band gap oxides, Journal of Applied Physics 115, 203708 (2014) H. Li, L. Lin, and J. Robertson*, Defect energy levels in La and Hf germanates on Ge, Journal of Applied Physics 113, 124101 (2013) H. Li and J. Robertson*, Defects at Ge: GeO2 and Ge: MeOx interfaces, Microelectronic Engineering 109, 244 (2013) H. Li, L. Lin, and J. Robertson*, Identifying a suitable passivation route for Ge interfaces, Applied Physics Letters 101, 052903 (2012) H. Li and J. Robertson*, Defect compensation in LaAlO3 perovskite-based high dielectric constant oxides, Journal of Applied Physics 112, 034108 (2012) H. Li, L. Lin, and J. Robertson*, Electronic structure of epitaxial germanium—Metal germanate interfaces, Journal of Applied Physics 112, 114114 (2012) H. Li, L. Lin, K. Xiong, and J. Robertson*, Atomic bonding and disorder at Ge: GeO2 interfaces, Microelectronic Engineering 88, 1564 (2011)