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Brewer, W. M., Xin, Y., Hatem, C., Diercks, D. R., Truong, V. Q., Jones, K. S (2016) "Lateral Ge Diffusion During Oxidation of Si/SiGe Fins" Nanoletters http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b04407;
C.S.C Barrett, T.P. Martin, X.-y. Bao, E.L.Kennon, L. Gutierrez, P. Martin, E. Sanchez & Jones, K. S. (2016) "Effect
T.P. Martin, Aldridge, H. L. & Jones, K. S. (2016) "Use of a buried loop layer as a detector of interstitial flux during oxidation of SiGe heterostructures" Journal Vacuum Science and Technology A 35 021101 (2016) http://dx.doi.org/10.1116/1.4972516;
C.S.C Barrett, T.P. Martin, X.-y. Bao, E.L.Kennon, L. Gutierrez, P. Martin, E. Sanchez & Jones, K. S. (2016) "Effect of Bulk Growth Temperature on Antiphase Domain Boundary Annihilation Rate in MOCVD-grown GaAs on Si(001) Journal of Crystal Growth Volume 15 September 2016 Pages 39-44 (2016) http://dx.doi.org/10.1116/1.4972516; ECS
Ryan Murray,Katherine Haynes, Xueying Zhao, Scott Perry, Christopher Hatem & Jones, K. S. (2016) "The Effect of Low Energy Ion Implantation on MoS2, ECS Journal of Solid State Science and Technology Volume 5 Issue 11 Q3050-Q3053 (2016) DOI: 10.1149/2.0111611jss;
Lind, A. G., Martin, T.P., Sorg, V.C., Kennon, E.L., Truong, V.Q., Aldridge, H. L.,Jr, Hatem, C., Thompson, M.O., & Jones, K. S. (2016)"Activation of Si implants into InAs characterized by Raman scattering" Journal of Applied Physics 119, 095705(2016); http://dx.doi.org/10.1063/1.4942880
Lind, A. G., Aldridge, H. L., Jr., Boomberger, C.C., Hatem, C., Zide, J.M.O. & Jones, K. S. (2015)"Fermi-Level Effects on Extended Defect Evolution in Si+ and P+ Implanted In0.53Ga0.47As" ECS Journal of Solid State Science and Technology, 5(4)P3073-P3077(2016); http://doi.org/10.1149/2.0141604jss
Lind, A. G., Aldridge, H. L., Jr., Jones, K. S., & Hatem, C. (2015)"Co-implantion of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As" Journal of Vacuum Science & Technology B 33, 051217(2015); http://doi.org/10.1116/1.4931030
Lind, A. G., Aldridge, H. L., Jr., Bomberger, C. C., Hatem, C., Zide, J. M. O., & Jones, K. S. (2015)"Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As" Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 33(2), 021206–6. http://doi.org/10.1116/1.4914319
Khateeb, Al, S., Lind, A. G., Santos-Ortiz, R., Shepherd, N. D., & Jones, K. S."Cycling performance and morphological evolution of pulsed laser-deposited FeF2 thin film cathodes for Li-ion batteries"Journal of Materials Science, 1–9. doi: 10.1007/s10853-015-9062-5
Khateeb, S. A., Lind, A. G., Santos-Ortiz, R., Shepherd, N. D., & Jones, K. S. "Effects of Steel Cell Components on Overall Capacity of Pulsed Laser Deposited FeF2 Thin Film Lithium Ion Batteries"Journal of the Electrochemical Society, 162(8), A1667–A1674. doi:10.1149/2.0021509jes
C.S.C. Barrett, A.G. Lind, X. Bao, Z. Ye, K.Y. Ban, P. Martin, E. Sanchez, Y. Xin, K.S. Jones "Quantitative correlation of interfacial contamination and antiphase domain boundary density in GaAs on Si(100)"J. Mater Sci DOI 10.1007/s10853-015-9334-0 (May 2015)
Ya-Hsi Hwang, Shihyun Ahn, Chen Dong, Weidi Zhu, Byung-Jae KIm, Lingcong Le, Fan Ren, Aaron G. Lind, James Dahl, Kevin S. Jones, Stephen J. Pearton, Ivan I. Kravchenko, Ming-Lan Zhang "Degradation Mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs"Journal of Vacuum Science & Technology B 33, 031212 (2015); doi 10.1116/1.4919237
Shihyun Ahn, Weidi Zhu, Chen Dong, Lingcong Le, Ya-Hsi Hwang, Byung-Jae Kim, Fan Ren, Stephen J. Pearton, Aaron G. Lind, Kevin S. Jones, I.I. Kravchenko, Ming-Lan Zhang "Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors" Journal of Vacuum Science & Technology B 33, 031210 (2015); doi: 10.1116/1.4918715
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