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研究领域

Wide Energy Bandgap Electronic Devices Semiconductor Device Passivation

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“Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser”, L. Liu, C.Y. Chang, Wenhsing Wu, S.J. Pearton, F. Ren, Applied Surface Science 257, pp. 2303–2307 (2011). “Proton irradiation effects on AlN/GaN high electron mobility transistors”, C. F. Lo, C. Y. Chang, B. H. Chu, H.-Y. Kim, J. Kim, D. A. Cullen, L. Zhou, D. J. Smith, S. J. Pearton, A. Dabiran, B. Cui, P. P. Chow, S. Jang, and F. Ren, J. Vac. Sci. Technol. B 28, L47 (2010). “Effect of Humidity on Hydrogen Sensitivity of Pt-Gated AlGaN/GaN High Electron Mobility Transistor Based Sensors,” C. F. Lo , C.Y. Chang, B. H. Chu, S. J. Pearton, A. Dabiran, P. P. Chow, and F. Ren, Appl. Phys. Lett. 96, 232106 (2010). “Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors”, Yu-Lin Wang, B.H. Chu, C.Y. Chang, C.F. Lo, S.J. Pearton, A. Dabiran, P.P. Chow, F. Ren, Sensors and Actuators B 146, pp.349–352 (2010).

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