Goorsky, Mark - University of California, Los Angeles

个人简介

Awards TRW Outstanding Young Teacher Award, School of Engineering and Applied Science 1993 NSF CAREER Award in 1995 Northrop Grumman Outstanding Young Researcher Award in 1996 UCLA Center for Excellence in Engineering and Diversity (CEED) award for Outstanding Service to K-16 Science Education in 2000 Professional Activities Electronic Materials Conference, Program Chair (through 2009) Journal of Crystal Growth, Associate Editor, 2001-present

研究领域

High resolution X-ray diffraction; III-V; Ion Implantation, Epitaxial relaxation. The research programs in my group focus on the relationship between structural and chemical irregularities in solid state electronic materials and the effect that these defects have on the performance of devices fabricated from these materials. We primarily collaborate with industrial and government laboratories to provide a synergistic effort to study these issues. In particular, we use non-destructive techniques to study the evolution of defects in these structures. One of the main characterizations techniques we employ is reciprocal space mapping through triple axis x-ray diffraction. Our primary efforts in heteroepitaxy include i) pseudomorphic high electron mobility and heterojunction bipolar transistors grown on GaAs and InP substrates for radar-based communications; this effort (III-V heterostructures) also addresses the role of substrate perfection on the structural quality of the subsequently grown layers and on device performance, ii) solar cells using III-V / Ge solar cells. Selective epitaxial growth offers a means to synthesize low dimensional structures which exhibit novel quantum confinement features. This is our newest effort – in collaboration with Prof. K.L. Wang in the Electrical Engineering Department at UCLA – which focuses on gas source molecular beam epitaxy of silicon-germanium-carbon heterostructures. We are studying the growth of ternary InxGa1-xAs and CdxZn1-xTe bulk substrates to improve material quality and compositional uniformity. These substrates aim to provide a growth template with a different lattice parameter than can be achieved with binary compounds. Along with .. CdxZn1-xTe, we are studying HgI2 and GaAs as x-ray and gamma-ray detectors. Also, we have collaborations in relaxed graded buffer layers as an alternative means to tailor the lattice parameter of the surface of such structures. Ion implantation represents a key technology for III-V device processing. Our present research focuses on residual damage and dopant activation of carbon-implanted GaAs for p-type conduction and silicon-implanted GaAs for n-type conduction.

近期论文

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Oye, M.M., Bank, S.R., Ptak, A.J., Reedy, R.C., Goorsky, M.S., Holmes, A.L., “Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N2/Ar source gas mixtures”, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), 26(3):1058 – 1063 (May 2008) Hayashi, S.L., Koga, T., Goorsky, M.S., “Chemical mechanical polishing of GaN”, Journal of the Electrochemical Society, Electrochemical Society Inc.,USA, 155(2):113 – 116 (February 2008) Woo, R.L., Malouf, G., Cheng, S.F., Woo, R.N., Goorsky, M., Hicks, R.F., “Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride”, Journal of Crystal Growth, 310(3):579 – 583 (February 2008) Cheng, S.F., Gao, L., Woo, R.L., Pangan, A., Malouf, G., Goorsky, M.S., Wang, K.L., Hicks, R.F., “Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon”, Journal of Crystal Growth, 310(3):562 – 569 (February 2008) Joshi, M.B., Hayashi, S.L., Goorsky, M.S., “Fabrication of Transfer-Enhanced Semiconductor Substrates by Wafer Bonding and Hydrogen Exfoliation Techniques”, Electrochem. Solid-State Lett. 11, H236, (2008) Jackson, M., Goorsky, M.S., Noori, A., Hayashi, S.L., Sandhu, R., Poust, B., Chang-Chien, P., Gutierrez-Aitken, A., Tsai, R., “Determination of stress distribution in III-V single crystal layers for heterogeneous integration applications”, Physica Status Solidi A, 204(8):2675 – 2681 (August 2007)