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83. Z. Y. Ni, S. Zhou, S. Y. Zhao, W. B. Peng, D. Yang and X. D. Pi,* 'Silicon nanocrystals: unfading silicon materials for optoelectronics', Materials Science & Engineering R 138, 85-117 (2019). DOI: 10.1016/j.mser.2019.06.001.
82. L. Yin, C. Han, Q. T. Zhang, Z. Y. Ni, S. Y. Zhao, K. Wang, D. S. Li, M. S. Xu, H. Q. Wu,* X. D. Pi* and D. Yang*, 'Synaptic silicon-nanocrystal phototransistors for neuromorphic computing', Nano Energy 63, 103859 (2019). DOI: 10.1016/j.nanoen.2019.103859.
81. S. Y. Zhao, Y. Wang, W. Huang, H. Jin, P. W. Huang, H. Wang, K. Wang, D. S. Li, M. S. Xu, D. Yang and X. D. Pi,* 'Developing near-infrared quantum-dot light-emitting diodes to mimic synaptic plasticity', Science China Materials 62, 1470-1478 (2019). DOI: 10.1007/s40843-019-9437-9.
80. S. Y. Zhao, Z. Y. Ni, H. Tan, Y. Wang, H. Jin, T. X. Nie, M. S. Xu, X. D. Pi* and D. Yang,* 'Electroluminescent synaptic devices with logic functions', Nano Energy 54, 383-389 (2018). DOI: 10.1016/j.nanoen.2018.10.018.
79. Z. Y. Ni, Y. Wang, L. X. Liu, S. Y. Zhao, Y. Xu,* X. D. Pi* and D. Yang, 'Hybrid structure of silicon nanocrystlas and 2D WSe2 for broadband optoelectronic synaptic devices', International Electron Device Meeting (IEDM), 38.5.1-38.5.4 (2018), 1-5 Dec. 2018, San Francisco, USA. DOI: 10.1109/IEDM.2018.8614657
78. H. Tan, Z. Y. Ni, W. B. Peng, S. C. Du, X. K. Liu, S. Y. Zhao, W. Li, Z. Ye, M. S. Xu, Y. Xu, X. D. Pi* and D. Yang,* 'Broadband optoelectronic synaptic devices based on silicon nanocrystals for neuromorphic computing', Nano Energy 52, 422-430 (2018). DOI: 10.1016/j.nanoen.2018.08.018.
77. W. B. Peng, T. Xu, P. Diener, L. Biadala, M. Berthe, X. D. Pi*, Y. Borensztein, A. Curcella, R. Bernard, G. Prévot* and B. Grandidier*, 'Resolving the controversial existence of silicene and germanene nanosheets grown on graphite', ACS Nano 12, 4754-4760 (2018). DOI: 10.1021/acsnano.8b01467.
76. S. Y. Zhao, X. K. Liu, W. Gu, X. Y. Liang, Z. Y. Ni, H. Tan, K. Huang, Y. C. Yan, X. G. Yu, M. S. Xu, X. D. Pi* and D. Yang, 'Al2O3-interlayer-enhanced performance of all-inorganic silicon-quantum-dot near-infrared light-emitting diodes', IEEE Transactions on Electron Devices 65, 577-583 (2018). DOI: 10.1109/TED.2017.2782772.
75. X. K. Liu, S. Y. Zhao, W. Gu, Y. T. Zhang, X. S. Qiao, Z. Y. Ni, X. D. Pi* and D. Yang, 'Light-emitting diodes based on colloidal silicon quantum dots with octyl and phenylpropyl ligands', ACS Applied Materials & Interfaces 10, 5959−5966 (2018). DOI: 10.1021/acsami.7b16980.
74. S. Zhou,* T. Nozaki and X. D. Pi*, 'Boron nanocrystals as high-energy-density fuels', Journal of Physics D: Applied Physics 51, 025305 (2018). DOI: 10.1088/1361-6463/aa9df6.
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73. S. C. Du, Z. Y. Ni, X. M. Liu, H. W. Guo, A. Ali, Y. Xu* and X. D. Pi*, “Graphen/silicon-quantum-dot/silicon Schottky-PN cascade heterojuction for short-wavelength infrared photodetection”, International Electron Device Meeting (IEDM), 8.7.1-8.7.4 (2017), 2-6 Dec. 2017, San Francisco, USA. DOI: 10.1109/IEDM.2017.8268355.
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72. Z. Y. Ni, L. L. Ma, S. C. Du, Y. Xu,*M. Yuan, H. H. Fang, Z. Wang, M. S. Xu, D. S. Li, J. Y. Yang, W. D. Hu,* X. D. Pi* and D. Yang,* 'Plasmonic silicon quantum dots enabled high-sensitivity ultra-broadband photodetection of graphene-based hybrid phototransistors', ACS Nano 11, 9854-9862 (2017). DOI: 10.1021/acsnano.7b03569.
71. W. Gu, X. K. Liu, X. D. Pi*, X. L. Dai, S. Y. Zhao, L. Yao, D. S. Li, Y. Z. Jin, M. S. Xu, D. Yang, and G. G. Qin, 'Silicon-quantum-dot light-emitting diodes with interlayer-enhanced hole transport', IEEE Photonics Journal 9, 4500610 (2017). DOI: 10.1109/JPHOT.2017.2671023.
70. Z. Y. Ni, X. D. Pi*, S. Cottenier and D. Yang*, 'Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO2', Physical Review B 95, 075307 (2017). DOI: 10.1103/PhysRevB.95.075307.
69. T. H. Yuan, X. D. Pi* and D. Yang, 'Nonthermal plasma synthesized boron-doped germanium nanocrystals', IEEE Journal of Selected Topics in Quantum Electronics 23, 4800205 (2017). DOI: 10.1109/JSTQE.2017.2654058.
68. M. Ali, Z. Y. Ni, S. Contenier, Y. Liu, X. D. Pi* and D. Yang, 'Formation, structures and electronic properties of silicene oxides on Ag(111)', Journal of Materials Science & Technology, (2017). DOI:10.1016/j.jmst.2016.08.020.
67. H. Jia, R. Wang, Z. Y. Ni, Y. Liu, X. D. Pi* and D. Yang, 'Formation, stability, geometry and band structure of organically surface-modified germanane', Journal of Materials Science & Technology 33, 59-64 (2017). DOI: 10.1016/j.jmst.2016.01.019.
66. S. Y. Zhao, X. D. Pi*, C. Mercier, Z. C. Yuan, B. Q. Sun,* D. Yang,* 'Silicon-nanocrystal-incorporated ternary hybrid solar cells', Nano Energy 26, 305-312 (2016). DOI: 10.1016/j.nanoen.2016.05.040.
65. T. Yu, F. Wang, Y. Xu,* L. L. Ma, X. D. Pi* and D. Yang,* 'Graphene coupled with silicon quantum dots for high-performance bulk-silicon-based Schottky-junction photodetectors', Advanced Materials 28, 4912-4919 (2016). DOI: 10.1002/adma.201506140.
64. Y. Gao, X. D. Pi,* X. H. Wang, T. H. Yuan, Q. J. Jiang, R. Gresback, J. G. Lu* and D. Yang,* 'Structures, oxidation and charge transport of phosphorus-doped germanium nanocrystals', Particle and Particle Systems Characterization 33, 271-278 (2016). DOI: 10.1002/ppsc.201600016.
63. S. Zhou, Z. Y. Ni, Y. Ding, M. Sugaya, X. D. Pi* and T. Nozaki,* 'Ligand-free, colloidal and plasmonic silicon nanocrystals heavily doped with boron', ACS Photonics 3, 415-422 (2016). DOI: 10.1021/acsphotonics.5b00568.
62. Z. Y. Ni, X. D. Pi,* S. Zhou, T. Nozaki, B. Grandidier and D. Yang,* 'Size-dependent structures and optical absorption of boron-hyperdoped silicon nanocrystals', Advanced Optical Materials 4, 700-707 (2016). [Inside Front Cover Paper] DOI: 10.1002/adom.201500706.
61. L. Yao, T. Yu, L. X. Ba, H. Meng, X. Fang, Y. L. Wang, L. Li, X. Rong, S, Wang, X. Q. Wang, G. Z. Ran, X. D. Pi* and G. G. Qin,* 'Efficient silicon quantum dots light emitting diodes with an inverted device structure', Journal of Materials Chemistry C 4, 673-677 (2016). [Front Cover Paper] DOI:10.1039/C5TC03064A.
60. X. K. Liu, Y. H. Zhang, T. Yu, X. S. Qiao, R. Gresback, X. D. Pi* and D. Yang, 'Optimum quantum yield of the light emission from 2 - 10 nm hydrosilylated silicon quantum dots', Particle and Particle Systems Characterization 33, 44-52 (2016). DOI: 10.1002/ppsc.201500148.
59. Z. Y. Ni, X. D. Pi,* M. Ali, S. Zhou, T. Nozaki and D. Yang, 'Freestanding doped silicon nanocrystals synthesized by plasma' [REVIEW], Journal of Physics D: Applied Physics 48, 314006 (2015). DOI: 10.1088/0022-3727/48/31/314006.
58. R. Wang, M. S. Xu and X. D. Pi*, 'Chemical modification of silicene' [REVIEW], Chinese Physics B 24, 086807 (2015). DOI: 10.1088/1674-1056/24/8/086807.
57. S. Zhou, X. D. Pi,* Z. Y. Ni, Y. Ding, Y. Y. Jiang, C. H. Jin, C. Delerue, D. Yang* and T. Nozaki,* 'Comparative Study on the Localized Surface Plasmon Resonance of Boron- and Phosphorous-doped Silicon Nanocrystals', ACS Nano 9, 378-386 (2015). DOI: 10.1021/nn505416r.
56. S. Zhou, X. D. Pi,* Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki and D. Yang,* 'Boron- and phosphorus-hyperdoped silicon nanocrystals', Particle and Particle Systems Characterization 32, 213-221 (2015). DOI: 10.1002/ppsc.201400103.
55. X. D. Pi, Z. Y. Ni, Y. Liu, Z. C. Ruan, M. S. Xu and D. Yang,* 'Density functional theory study on boron- and phosphorus-doped hydrogen-passivated silicene', Physical Chemistry Chemical Physics 17, 4146-4151 (2015).DOI: 10.1039/C4CP05196C.
54. R. Wang, X. D. Pi,* Z. Y. Ni, Y. Liu and D. Yang, 'Density functional theory study on organically surface-modified silicene', RSC Advances, 5, 33831-33837 (2015). DOI: 10.1039/c5ra05751e.
53. T. Yu, X. D. Pi,* Z. Y. Ni, H. Zhang and D. Yang, 'Twinned silicon and germanium nanocrystals: formation, stability and quantum confinement', AIP Advances, 5, 037140 (2015). DOI: 10.1063/1.4916778.
52. Y. Du,* J. C. Zhuang, H. S. Liu, X. Xu, S. Eilers, K. H. Wu, P. Cheng, J. J. Zhao, X. D. Pi, K. W. See, G. Peleckis, X. L. Wang and S. X. Dou, 'Tuning the band gap in silicene by oxidation', ACS Nano 8, 10019–10025 (2014). DOI: 10.1021/nn504451t.
51. Q. B. Luan, Z. Y. Ni, S. Koura, T. J. Zhu, D. Yang and X. D. Pi,* 'Low-resistivity bulk silicon prepared by hot-pressing boron- and phosphorus-hyperdoped silicon nanocrystals', AIP Advances 4, 127108 (2014). DOI: 10.1063/1.4903550.
50. S. Zhou, Y. Ding, X. D. Pi and T. Nozaki,* 'Doped silicon nanocrystals from organic dopant precursor by a SiCl4-based high frequency nonthermal plasma', Applied Physics Letters 105, 183110 (2014). DOI: 10.1063/1.4901278.
49. X. D. Pi, Z. Y. Ni, D. Yang* and C. Derelue,* 'Ab initio study on the effect of structural relaxation on the electronic and optical properties of P-doped Si nanocrystals', Journal of Applied Physics 116, 194304 (2014). DOI: 10.1063/1.4901947.
48. Y. Ding, R. Gresback, Q. M. Liu, S. Zhou, X. D. Pi, T. Nozaki,* 'Silicon nanocrystal conjugated polymer hybrid solar cells with improved performance', Nano Energy 9, 25-31 (2014). DOI: 10.1016/j.nanoen.2014.06.024.
47. X. D. Pi, R. Wang and D. Yang,* 'Density functional theory study on the oxidation of hydrosilylated silicon nanocrystals', Journal of Materials Science and Technology 30, 639-643 (2014). DOI: 10.1016/j.jmst.2014.01.012
46. Z. Y. Ni, X. D. Pi* and D. Yang, 'Doping Si nanocrystals embedded in SiO2 with P in the framework of density functional theory', Physical Review B 89, 035312 (2014). DOI: 10.1103/PhysRevB.89.035312.
45. X. D. Pi, T. Yu and D. Yang,* 'Water-dispersible silicon-quantum-dot-containing micelles self-assembled from an amphiphilic polymer', Particle and Particle Systems Characterization 31, 751-756 (2014). [Front Cover Paper] DOI: 10.1002/ppsc.201300346.
44. X. D. Pi, R. Wang and D. Yang,* 'Quantum confinement and surface chemistry of 0.8 – 1.6 nm hydrosilylated silicon nanocrystals', Chinese Physics B 23, 076102 (2014). DOI: 10.1088/1674-1056/23/7/076102.
43. L. Shi, T. Yu, L. W. Sun, H. B. Huang, X. D. Pi, X. S. Peng,* 'Facile synthesis of highly fluorescent gelatin/Si nanocrystals composite thin films for optical detection of amines in water', Journal of Materials Chemistry C 2, 1971-1976 (2014). DOI: 10.1039/c3tc32321h.
42. R. Wang, X. D. Pi*, Z. Y. Ni, Y. Liu, S. S. Lin, M. S. Xu and D. Yang,* 'Silicene oxides: formation, structures and electronic properties', Scientific Reports 3, 3507 (2013). DOI: 10.1038/srep03507.
41. X. D. Pi* and C. Delerue,* 'Tight-binding calculations of the optical response of optimally P-doped Si nanocrystals: a model for localized surface plasmon resonance', Physical Review Letters 111, 177402 (2013). DOI: 10.1103/PhysRevLett.111.177402.
40. Y. Gao, S. Zou, Y. F. Zhang, C. Dong, X. D. Pi* and D. Yang, 'Doping silicon wafers with boron by use of silicon paste', Journal of Materials Science and Technology 29, 652-654 (2013). DOI:10.1016/j.jmst.2013.04.009.
39. Z. Deng, X. D. Pi,*J. J. Zhao and D. Yang, 'Photoluminescence from silicon nanocrystals in encapsulating materials', Journal of Materials Science and Technology 29, 221-224 (2013). DOI:10.1016/j.jmst.2013.01.006.
38. L. Shi, T. Yu, L. W. Sun, X. D. Pi and X. S. Peng,* 'Optical properties of free-standing gelatin-Si nanoparticle composite films and gelatin-Si-Au nanoparticle composite films', Physical Chemistry Chemical Physics 15, 20140-20146 (2013). DOI: 10.1039/c3cp53618a.
37. R. Wang, X. D. Pi* and D. Yang, 'Surface modification of chlorine-passivated silicon nanocrystals', Physical Chemistry Chemical Physics 15, 1815-1820 (2013). DOI:10.1039/C2CP43763E.
36. Z. Y. Ni, X. D. Pi* and D. Yang, 'Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon', RSC Advances 2, 11227-11230 (2012). DOI:10.1039/C2RA21537C.
35. X. D. Pi,*L. Zhang and D. Yang,* 'Enhancing the efficiency of multicrystalline silicon solar cells by the inkjet printing of silicon-quantum-dot ink', Journal of Physical Chemistry C 116, 21240-21243 (2012). DOI: 10.1021/jp307078g.
34. X. D. Pi*, 'Doping silicon nanocrystals with boron and phosphorus' [REVIEW], Journal of Nanomaterials 2012, 912903 (2012). DOI: 10.1155/2012/912903.
33. R. Wang, X. D. Pi* and D. Yang,* 'First-principles study on the surface chemistry of 1.4 nm silicon nanocrystals: case of hydrosilylation', Journal of Physical Chemistry C 116, 19434-19443(2012). DOI: 10.1021/jp307785v.
32. Z. Y. Ni, X. D. Pi* and D. Yang, 'Can hydrogen be incorporated inside silicon nanocrystals?', Chinese Physics Letters 29, 077801(2012). DOI: 10.1088/0256-307X/29/7/077801.
31. P. G. Coleman,* C. J. Edwardson, A. B. Zhang, X. Y. Ma, X. D. Pi and D. Yang, 'Defects in TiO2 films on P+-Si studied by positron annihilation spectroscopy', Materials Science and Engineering B 177, 625-628 (2012). DOI: 10.1016/j.mseb.2012.02.023.
30. Y. S. Ma, X. B. Chen, X. D. Pi* and D. Yang, 'Lightly boron and phosphorus co-doped silicon nanocrystals', Journal of Nanoparticle Research 14, 802 (2012). DOI: 10.1007/s11051-012-0802-z.
29. Y. S. Ma, X. D. Pi* and D. Yang, 'Fluorine-passivated silicon nanocrystals: surface chemistry versus quantum confinement', Journal of Physical Chemistry C 116, 5401-5406 (2012). DOI:10.1021/jp211177d.
28. X. B. Chen, X. D. Pi* and D. Yang, 'Silicon nanocrystals doped with substitutional or interstitial manganese', Applied Physics Letters 99, 193108 (2011), DOI:10.1063/1.3660233.
27. X. D. Pi, X. B. Chen, Y. S. Ma and D. Yang*, 'Optical absorption and emisson of nitrogen-doped silicon nanocrystals', Nanoscale 3, 4584-4588 (2011), DOI:10.1039/CINR10940E.
26. X. D. Pi, Q. Li, D. S. Li and D. Yang*, 'Spin-coating silicon-quantum-dot ink to improve solar cell efficiency', Solar Energy Materials and Solar Cells 95, 2941-2945 (2011), introduced by Nanotechweb, DOI:10.1016/j.solmat.2011.06.010.
25. Y. S. Ma, X. B. Chen, X. D. Pi* and D. Yang, 'Theoretical study of chlorine for silicon nanocrystals', Journal of Physical Chemistry C 115, 12822-12825 (2011), DOI: 10.1021/jp203064m.
24. X. D. Pi, X. B. Chen and D. Yang*, 'First-principles study of 2.2 nm silicon nanocrystals doped with boron', Journal of Physical Chemistry C 115, 9838-9843 (2011),DOI: 10.1021/jp111548b.
23. X. B. Chen, X. D. Pi* and D. Yang,'Critical role of dopant location for P-doped Si nanocrystals', Journal of Physical Chemistry C 115, 661-666 (2011), DOI: 10.1021/jp1102934.
22. X. B. Chen, X. D. Pi and D. Yang*, “Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals”, Journal of Physical Chemistry C 114, 8774-8781 (2010), DOI: 10.1021/jp100632u.
21. X. D. Pi, Z. Holman and U. Kortshagen*, “Silicon and germanium nanocrystal inks for low cost solar cells”, Proceedings of ASME 4th International Conference on Energy Sustainability 2, 471-474 (2010).
20. Y. Y. Zhang, X. Y. Ma*, P. L. Chen, D. S. Li, X. D. Pi, D. Yang, P. G. Coleman, “Enhancement of electroluminescence from TiO2/p(+)-Si heterostructure-based devices through engineering of oxygen vacancies in TiO2”, Applied Physics Letters 95, 252102 (2009), DOI: 10.1063/1.3276547.
19. X. D. Pi* and U. Kortshagen*, “Nonthermal plasma synthesized freestanding silicon-germanium alloy nanocrystals”, Nanotechnolgy 20, 295602 (2009), introduced by Nanotechweb, DOI: 10.1088/0957-4484/20/29/295602.
18. X. D. Pi, R. W. Liptak, J. D. Nowak, N. P. Wells, C. B. Carter, S. A. Campbell and U. Kortshagen*, “Air-stable full visible spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach”, Nanotechnology 19, 245603 (2008), DOI: 10.1088/0957-4484/19/24/245603.
17. X. D. Pi*, R. Gresback, R. W. Liptak, S. A. Campbell and U. Kortshagen*, “Doping efficiency, dopant location and oxidation of Si nanocrystals”, Applied Physics Letters 92, 123102 (2008), highlighted by Materials360 Plus of MRS and Materials Today, DOI: 10.1063/1.2897291.
16. X. D. Pi, R. Liptak, R. Ligman, U. Kortshagen and S. A. Campbell*, “Full spectrum emission and hybrid OLEDs from silicon nanoparticles”, IEEE 4th International Conference on Group IV Photonics, p 249-251 (2007).
15. X. D. Pi, R. Anthony, S. A. Campbell and U. Kortshagen*, “Doped silicon nanoparticles synthesized by nonthermal plasma”, Materials Research Society Symposium Proceedings 1031E, H14.4 (2007).
14. X. D. Pi*, R. W. Liptak, S. A. Campbell and U. Kortshagen*, “In-flight drying etching of plasma-synthesized silicon nanocrystals”, Applied Physics Letters 91, 083112 (2007), DOI: 10.1063/1.2773931.
13. X. D. Pi, L. Mangolini, S. A. Campbell and U. Kortshagen*, “Room-temperature atmospheric oxidation of Si nanocrystals after HF etching”, Physical Review B 75, 085423 (2007), DOI: 10.1103/PhysRevB.75.085423.
12. X. D. Pi*, O. H. Y. Zalloum, T. Roscik, J. Wojcik, A. P. Knights, P. Mascher and P. J. Simpson, “Light emission from Si nanoclusters formed at low temperatures”, Applied Physics Letters 88, 103111 (2006), DOI: 10.1063/1.2183813.
11. X. D. Pi, O. H. Y. Zalloum, A. P. Knights*, P. Mascher and P. J. Simpson, “Electrical conduction of silicon oxide containing silicon quantum dots”, Journal of Physics: Condensed Matter 18, 9943-9950 (2006), DOI: 10.1088/0953-8984/18/43/016.
10. X. D. Pi, O. H. Y. Zalloum, J. Wojcik, A. P. Knights, P. Mascher* and P. J. Simpson, “Formation and oxidation of Si nanoclusters in Er-doped SiOx”, Journal of Applied Physics 97, 096108 (2005), DOI: 10.1063/1.1894600.
9. X. D. Pi, P. G. Coleman*, R. Harding, G. Davies and R. M. Gwilliam, “Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide”, Journal of Applied Physics 95, 8155-8519 (2004), DOI: 10.1063/1.1738539.
8. P. G. Coleman, X. D. Pi, R. M. Gwilliam and B. J. Sealy, “Nanocrystalline Si studied by beam-based positron annihilation spectroscopy”, Materials Science Forum 445-466, 66-68 (2004), DOI: 10.4028/www.scientific.net/MSF.445-446.66.
7. X. D. Pi, C. P. Burrows and P. G. Coleman*, “Fluorine in silicon: diffusion, trapping and precipitation”, Physical Review Letters 90, 155901 (2003), DOI: 10.1103/PhysRevLett.90.155901.
6. X. D. Pi, C. P. Burrows, P. G. Coleman*, R. M. Gwilliam and B. J. Sealy, “Oxygen-related vacancy-type defects in ion-implanted silicon”, Jouranl of Physics: Condensed Matter 15, S2825-S2833 (2003), DOI: 10.1088/0953-8984/15/39/007.
5. X. D. Pi, P. G. Coleman*, R. Harding, G. Davies, R. M. Gwilliam and B. J. Sealy, “Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2”, Physica B 340, 1094-1098 (2003), DOI: 10.1016/j.physb.2003.09.180.
4. X. D. Pi*, P. G. Coleman, C. L. Tseng, C. P. Burrows, B. Yavich and W. N. Wang, “Defects in GaN films studied by positron annihilation spectroscopy”, Journal of Physics: Condensed Matter 14, L243-L248 (2002), DOI: 10.1088/0953-8984/14/12/102.
3. X. D. Pi, C. P. Burrows and P. G. Coleman*, “Optimization of measurement parameters in Doppler broadening spectroscopy”, Applied Surface Science 194, 255-259 (2002), DOI: 10.1016/S0169-4332(02)00127-7.
2. Q. Shui, D. R. Yang*, L. B. Li, X. D. Pi and D. L. Que, “Intrinsic gettering of Czochralski silicon annealed in argon and nitrogen atmosphere”, Physica B 307, 40-44 (2001), DOI: 10.1016/S0921-4526(01)00603-2.
1. X. D. Pi, D. Yang*, X. Y. Ma, Q. Shui and D. L. Que, “Electrical activity of nitrogen-oxygen complexes in silicon”, Physica Status Solidi B 221, 641-645 (2000), DOI: 10.1002/1521-3951(200010)221:2<641::AID-PSSB641>3.0.CO;2-Z.
中文论文
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4. 栾庆彬 皮孝东* 半导体纳米晶体在薄膜晶体中的应用 《材料导报》 28,1-7 （2014）论文链接
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2. 张莉 皮孝东* 杨德仁 硅纳米晶体在太阳电池中的应用 《材料导报》 26,128-134 （2012）论文链接
1. 李庆 马翩翩 赵文达 皮孝东* 杨德仁 硅纳米颗粒薄膜对硅太阳电池的减反射作用分析 《太阳能学报》 33,1850-1854 （2012）论文链接
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