黄火林 - 大连理工大学 - 光电工程与仪器科学学院

个人简介

教育经历 2006.9 -- 2011.7 厦门大学凝聚态物理博士 2002.9 -- 2006.7 厦门大学物理学学士工作经历 2011.8 -- 2014.9 新加坡国立大学电机工程系（ECE）博士后研究员博士后社会兼职省第三代半导体专业技术创新中心-主任省级高效智能光伏组件工程研究中心-技术委员会委员、特聘技术顾问国家基金委重点类/面上等项目、中国博士后科学基金、教育部博士学位中心以及多省市人才/重大科研项目（会评）评审专家中国电子学会高级会员国际知名学术期刊 Micromachines (JCR2区) 编辑多个重要国际学术会议Technical Program Committee 参与IEEE国际功率半导体技术路线、GaN器件测试国家标准制定 IEEE EDL, T-ED, T-PEL, T-DMR, APL, ACS AMI, 中国物理B, 物理学报, 中国电机工程学报等三十余个国际国内重要学术期刊审稿人，多次获批优秀审稿人

研究领域

1、氮化镓材料新型电力电子（功率）器件设计与TCAD仿真、增强型器件工艺、可靠性模型与加固技术以及模块集成技术； 2、氮化镓/氧化镓基传感器/忆阻器芯片制作与集成技术； 3、基于氮化镓基材料的交叉学科开拓性前沿技术

近期论文

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K. Ma, H. Huang*, N. Ding, et al., “Demonstration of High-Performance GaN-Based Hall Sensors on Si Substrate by Simulation and Experiment Verification,” IEEE Trans. Electron Devices, vol. 69, no. 12, pp.7019-7024, 2022 (SCI, IF=3.22, top). N. Sun, H. Huang*, Z. Sun, et al., “Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment,” IEEE Trans. Electron Devices, vol. 69, no. 1, pp. 82-87, 2022 (SCI, IF=3.22, top). F. Li, R. Wang, H. Huang*, et al., Temperature Dependent Hot Electron Effects and Degradation Mechanisms in 650-V GaN-based MIS-HEMT Power Devices under Hard Switching Operations, IEEE J. Emerg. Sel. Topics Power Electron., vol. 9, pp. 6424-6431, 2021 ( (5年)IF=6.08, top). Z. Sun, H. Huang*, et al., A Novel Analytical Model for Ohmic Contacts to Planar Devices: Theoretical Design and Experimental Verification, IEEE Trans. Electron Dev. 68, pp. 299-306, 2021 (SCI, IF=3.22, top). Z. Sun, H. Huang*, et al., Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors, J. Phys. D: Appl. Phys., vol. 54, p. 025109, 2021 (SCI, IF=3.41). H. Huang*, H. Zhang, Y. Cao, et al., High-temperature three-dimensional GaN-based hall sensors for magnetic field detection, J. Phys. D: Appl. Phys., vol. 54, p. 075003, 2021 (SCI, IF=3.41). Z. Sun, H. Huang*, et al., Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics, IEEE Electron Device Lett. 41, pp. 135-138, 2020 (SCI, IF=4.82, top). Z. Sun, H. Huang*, et al., A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure, Micromachines, vol. 10, p. 848, 2020 (SCI, IF=3.52). H. Huang*, Z. Sun, Y. Cao, et al., Investigation of Surface Traps-Induced Current Collapse Phenomenon in AlGaN/GaN High Electron Mobility Transistors with Schottky Gate Structures, J. Phys. D: Appl. Phys., vol. 51, p. 345102, 2018 (SCI, IF=3.41). H. Huang*, F. Li, Z. Sun, and Y. Cao, Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices, Micromachines, vol. 9, p. 658, 2018 (SCI, IF=3.52). H. Huang*, Z. Sun, F. Zhang, et al., Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme, Physica E, vol. 108, pp. 197-201, 2019 (SCI, IF=3.57). H. Huang*, F. Li, Z. Sun, et al., Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Block Layer Structure, Electronics, vol. 8, p. 241, 2019 (SCI, IF=2.41). H. Huang*, F. Li, Z. Sun, et al., Proposal and Demonstration of GaN-Based Normally-Off Vertical Field-Effect Transistor with a Design of Back Current Block Layer, Key Eng. Mater., vol. 787, pp. 69-73, 2018 (EI). H. Huang*, Y. Cao, et al., Improved Wide-bandgap Gallium Nitride Hall Sensors for High Temperature Applications, 2019 Collaborative Conference on Materials Research (CCMR), Goyang, South Korea, June 3-7, 2019. H. Huang*, Z. Sun, et al., Performance-Improved Normally-off AlGaN/GaN High-Electron Mobility Transistors with a Designed p-GaN Area under the Recessed Gate, 13rd IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, pp. 1230-1232, 2016 (EI). Z. Sun, H. Huang*, et al., Improved On-Resistance and Breakdown Voltage Vertical GaN-based Field Effect Transistors, 13rd IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, pp. 1101-1103, 2016 (EI). H. Huang*, Z. Sun, Y. Cao, et al., A New Method for Extracting Ohmic Contact Parameters Obtaining the specific contact resistance from transmission line model measurements, 2018 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi'an, pp. 153-156, 2018 (EI). H. Huang* and Y.C. Liang, "Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices", Solid-State Electron. 114, 148-154, 2015 (SCI, IF=1.44). H. Huang, Yung C. Liang, Ganesh S. Samudra, Ting-Fu Chang, and Chih-Fang Huang, “Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs”, IEEE Trans. Power Electron. 29, 2164-2173, 2014 (SCI, IF=6.37, top). H Huang, Yung C. Liang, Ganesh S. Samudra, and Cassandra Low Lee Ngo, “Au-Free Normally-off AlGaN/GaN-on-Si MIS-HEMTs using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures”, IEEE Electron Device Lett. 35, pp. 569-571, 2014 (SCI, IF=4.22, top). H. Huang*, Y. Xie, et al., “Growth and fabrication of sputtered TiO2 based ultraviolet detectors”, Appl. Surf. Sci. 293, pp. 248-254, 2014, (SCI, IF=6.18, top). H. Huang, Y. Xie, et al., “Low-Dark-Current TiO2 MSM UV Photodetectors with Pt Schottky Contacts”, IEEE Electron Device Lett. 32, pp. 530-532, 2011 (SCI, IF=4.82, top). H. Huang*, W. Yang, et al., “Metal-semiconductor-metal ultraviolet photodetectors based on TiO2 films deposited by radio frequency magnetron sputtering”, IEEE Electron Device Lett. 31, pp. 588-590, 2010 (SCI, IF=4.82, top). H. Huang*, Y.-H. Wang, et al., "Formation of Gate Structure by Multiple Fluorinated Dielectric Layers on Partially Recessed Barrier for High Threshold Voltage AlGaN/GaN Power HEMTs", 11th International Conference on Nitride Semiconductors (ICNS-11), 2015, August 30 - September 4, Beijing, China. H. Huang, Y.-H. Wang, et al., “5V High Threshold Voltage Normally-off MIS-HEMTs with Combined Partially Recessed and Multiple Fluorinated-Dielectric Layers Gate Structures”, 46th SSDM 2014, September 8-11, 2014, Ibaraki, Japan. H. Huang, Y. C. Liang, G. S. Samudra, and C.-F. Huang, “Design of Novel Normally-off AlGaN/GaN HEMTs with Combined Gate Recess and Floating Charge Structures”, IEEE PEDS 2013, April 22-25, 2013, Kitakyushu, Japan. H. Huang, Y. C. Liang, and G. S. Samudra, “Theoretical Calculation and Efficient Simulations of Power Semiconductor AlGaN/GaN HEMTs”, IEEE EDSSC 2012, December 3-5, 2012, Chulalongkorn University, Bangkok, Thailand. H. Huang, Y. C. Liang, et al., “Modelling and Simulations on Current Collapse in AlGaN/GaN Power HEMTs”, SISPAD 2012, September 5-7, 2012, Denver, CO, USA.