许军 - 清华大学 - 集成电路学院

个人简介

许军，男，研究员，1963年6月生于安徽合肥，1986年毕业于清华大学无线电电子学系半导体器件与物理专业，获工学学士学位，后分别于1989年和1994年在航天工业部771研究所计算机器件与设备专业获工学硕士学位和工学博士学位，1994年至1996年在清华大学微电子学研究所电子学与通信博士后科研流动站从事超大规模集成电路工艺技术的基础研究工作，1997年在清华大学微电子学研究所晋升为副研究员，1997至1999年在美国新奥尔良大学先进材料研究所固体器件研究组做访问学者，1999年回国后继续在清华大学微电子学研究所集成电路开发与工业性试验线工作，2002年晋升为研究员。

研究领域

目前主要从事SiGe/Si微波功率HBT器件与集成电路以及超高速应变硅MOS器件与集成电路的教学与科研工作。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

"Design of RTD-Based TSRAM," Chinese Journal of Semiconductor, Vol.25, No.2, pp.138-142, Feb., 2004. "Possibility of Combined Use of Neuron-MOS and RTD in Multi-Valued Logic Circuits," IEEE ASICON'2003, Beijing, 2003. "High-Performance SOI DTMOS Using a Retrograde Base with a Low Impurity Surface Channel," Proc. 2001 Int’l Semicon. Device Research Symp. (ISDRS’01), pp.613-616, Washington, DC, Dec. 5-7, 2001. "Design optimization of high performance low temperature 0.18um MOSFETs with low-impurity-density channels at supply voltage below 1 volt，" IEEE Trans. Elect. Dev., Vol.47, No.4, pp.813-821, Apr., 2000. "A dynamic threshold voltage SOI MOSFET with a stepped channel doping profile，" ICCDCS'2000, Mar. 15-17, 2000, Cancun, Mexico, D29-1~5. "An Improved Dynamic Threshold Structure for Deep-Submicrometer SOI at Extremely Low Supply Voltage," The 24th Annual EDS/CAS Activities in Western New York Conference, Rochester, NY, Nov.1st, 2000. "Investigation of Dynamic Threshold Voltage SOI MOSFET’s with Low-Impurity-Density Channels," Proc. 1999 Int’l Semicon. Device Research Symp. (ISDRS’99), pp.93-96, Charlottesville, Virginia, Dec. 1-3, 1999. "Design optimization of low-temperature and low-voltage deep-submicron MOSFETs using stepped-channel-doping profiles，" IEDMS'98, AP-9-P171~174, Dec. 21-23, 1998. "Optimization of deep-submicrometer temperature scalable MOSFETs based on two-dimensional numerical simulation，" J. Phys. IV France, Vol.8, 1998, Pr3-29~32. "Numerical studies of large-signal power characteristics of AlGaAs/GaAs HBTs，" Microelectronics Journal, Vol.26, No.6, pp.525-533, 1995. "Investigation of the uniformity of Ohmic contact to N-type GaAs formed by rapid thermal process，" Solid-State Electronics, Vol.36, No.2, pp.295-296, 1993. "Influence of velocity overshoot effect on high frequency performance of AlGaAs/GaAs HBTs，" Proceeding of ICSICT'92, Beijing, pp.509-511, 1992